BC856W ... BC859W BC856W ... BC859W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage PNP PNP Version 2011-07-11 2 0.1 0.3 1 0.1 Type Code 1 1.250.1 2.10.1 3 2 1.3 Dimensions - Mae [mm] 1=B 2=E 3=C Power dissipation - Verlustleistung 200 mW Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC856W BC857W BC858W BC859W Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 65 V 45 V 30 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 200 mW 1) Collector current - Kollektorstrom (dc) - IC 100 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 200 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom IEM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 5 V, - IC = 10 A Group A Group B Group C HFE hFE hFE - - - 140 250 480 - - - - VCE = 5 V, - IC = 2 mA Group A Group B Group C HFE hFE hFE 125 220 420 180 290 520 250 475 800 - - 75 mV 250 mV 300 mV 650 mV Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA 1 2 - VCEsat - VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC856W ... BC859W Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - VBEsat - VBEsat - - 700 mV 850 mV - - - VBE - VBE 600 mV - 650 mV - 750 mV 820 mV - ICBO - ICBO - - - - 15 nA 5 A - IEBO - - 100 nA fT 100 MHz - - CCBO - - 4.5 pF CEBO - 10 pF 15 pF F F - - - 1 dB 10 dB 4 dB Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz BC856W ... BC858W BC859W Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstarkungsgruppen pro Typ 2 1 2 < 620 K/W 1) BC846W ... BC849W BC856AW = 3A BC857AW = 3E BC858AW = 3J BC856BW = 3B BC857BW = 3F BC858BW = 3K BC859BW = 4B BC857CW = 3G BC858CW = 3L BC859CW = 4C Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG