2N6259
Silicon NPN Transistor
General Purpose, High Power Audio,
Disk Head Positioner for Linear Applications
Description:
The 2N6259 is a silicon NPN power transistor in a TO3 type package designed for high power audio,
disk head positioners, and other linear applications.
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO(sus) 150V.................................................
Collector−Emitter Voltage, VCEX 170V.....................................................
Collector−Base Voltage, VCBO 170V......................................................
Emitter−Base Voltage, VEBO 7V..........................................................
Collector Current, IC
Continuous 16A..................................................................
Peak (Note 1) 30A................................................................
Base Current, IB
Continuous 4A...................................................................
Peak (Note 1) 15A................................................................
Total Power Dissipation (TC = +25C), PD150W...........................................
Derate Above 25C 0.857 W/C....................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, TSTG −65 to +200C.........................................
Thermal Resistance, Junction−to−Case, RthJC 1.17C/W....................................
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 150 − − V
Collector Cutoff Current ICEX VCE = 150V, VBE(off) = 1.5V − − 2.0 mA
ICEO VCE = 130V, IB = 0 − − 10 mA
ICBO VCB = 150V, IE = 0 − − 2.0 mA
Emitter Cutoff Current IEBO VEB = 7V, IC = 0 − − 5.0 mA
ON Characteristics (Note 1)
DC Current Gain hFE VCE = 2V, IC = 8A 15 −60 −
VCE = 4V, IC = 16A 10 − − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 800mA − − 1.0 V
IC = 16A, IB = 3.2A − − 2.5 V
Base−Emitter On Voltage VBE(on) VCE = 2V, IC = 8A −−2.0 V
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
