BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications * Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO *Collector-Base Voltage Parameter : BD176 : BD178 : BD180 Value - 45 - 60 - 80 Units V V V VCEO Collector-Emitter Voltage : BD176 : BD178 : BD180 - 45 - 60 - 80 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A IC *Collector Current (Pulse) -7 A PC Collector Dissipation (TC=25C) 30 W Rja Junction to Ambient 70 C/W Rjc Junction to Case TJ Junction Temperature 8.5 150 C/W C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD176 : BD178 : BD180 Test Condition Min. Typ. Max. Units IC = - 100mA, IB = 0 - 45 - 60 - 80 ICBO Collector Cut-off Current : BD176 : BD178 : BD180 VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 - 100 - 100 - 100 A A A IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -1 mA hFE1 hFE2 * DC Current Gain VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A V V V 40 15 250 VCE(sat) * Collector-Emitter Saturation Voltage IC = -1 A , IB = - 0.1A - 0.8 VBE(on) * Base-Emitter On Voltage VCE = - 2V, IC = -1 A - 1.3 fT Current Gain Bandwidth Product VCE = -10V, IC = - 250mA 3 V V MHz * Pulse Test: PW=300s, duty Cycle=1.5% Pulsed hFE Classificntion Classification 6 10 16 hFE1 40 ~ 100 63 ~ 160 100 ~ 250 * Classification 16: Only BD 176 (c)2002 Fairchild Semiconductor Corporation Rev. B1, October 2002 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN V CE = -2V 100 10 1 -0.01 -0.1 -1 -10 IC = 10 IB V BE(sat) -1 V CE(sat) -0.1 -0.01 -0.1 -1 -10 -10 IC[A], COLLECTOR CURRENT I C[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 35 s PC[W], POWER DISSIPATION 0 10 IC MAX. (Continuous) s DC 1m -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area (c)2002 Fairchild Semiconductor Corporation BD180 BD176 -1 BD178 IC[A], COLLECTOR CURRENT 40 10 s IC MAX. (Pulsed) -100 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 4. Power Derating Rev. B1, October 2002 BD176/178/180 Typical Characteristics BD176/178/180 Package Dimensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1