©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002
BD176/178/180
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
hFE Classificntion
* Classification 16: Only BD 176
Symbol Parameter Value Units
VCBO *Collector-Base Voltage : BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
VCEO Collector-Emitter Voltage : BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 3 A
IC *Collector Current (Pulse) - 7 A
PC Collector Dissipation (TC=25°C) 30 W
Rθja Junction to Ambient 70 °C/W
Rθjc Junction to Case 8.5 °C/W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD1 76
: BD1 78
: BD1 80
IC = - 100mA, IB = 0 - 45
- 60
- 80
V
V
V
ICBO Collector Cut-of f Current : BD176
: BD1 78
: BD1 80
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
- 100
- 100
- 100
µA
µA
µA
IEBO Emitter Cut -of f Curr ent VEB = - 5V, IC = 0 - 1 mA
hFE1
hFE2
* DC Current G ain VCE = - 2V, IC = - 150mA
VCE = - 2V, IC = - 1A 40
15 250
VCE(sat) * Collector-Emitter Saturation Voltage IC = -1 A , IB = - 0.1A - 0.8 V
VBE(on) * Base-Emitter On Voltage VCE = - 2V, IC = -1 A - 1.3 V
fT Current Gain Bandwidth Pr oduct VCE = -10V , IC = - 250mA 3 MHz
Classification 6 10 16
hFE1 40 ~ 100 63 ~ 160 100 ~ 250
BD176/178/180
Medium Power Linear and Switching
Applications
• Complement to BD 175/177/179 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2002 Fairchild Semiconductor Corporation
BD176/178/180
Rev. B1, October 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
-10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
IC MAX. (Continuous)
BD180
BD178
BD176
10µs
100
µ
s
1ms
DC
IC MAX. (Pulsed)
IC[A], COLLECTOR CURRENT
VCE[V ], COLLECTOR-EMI TT E R VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
BD176/178/180
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2002 Fairchild Semiconductor Corporation Rev. I1
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