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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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FFSH20120ADN_F155 Silicon Carbide Schottky Diode 1200 V, 20 A Features Description * Max Junction Temperature 175 C * Avalanche Rated 100 mJ Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. * High Surge Current Capacity * Positive Temperature Coefficient * Ease of Paralleling * No Reverse Recovery / No Forward Recovery Applications * General Purpose * SMPS, Solar Inverter, UPS * Power Switching Circuits 1 2 3 TO-247 Long Lead Absolute Maximum Ratings TC = 25 C unless otherwise noted. (per leg) Symbol VRRM Peak Repetitive Reverse Voltage Parameter EAS Single Pulse Avalanche Energy IF Continuous Rectified Forward Current @ TC < 148 C (Note 1) Ratings 1200 Unit V 100 mJ 10* / 20** A TC = 25 C, 10 s 630 A IF, Max Non-Repetitive Peak Forward Surge Current TC = 150 C, 10 s 560 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 96 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 46 A TC = 25 C 150 W Ptot Power Dissipation TJ, TSTG Operating and Storage Temperature Range TC = 150 C TO247 Mounting Torque, M3 Screw 25 W -55 to +175 C 60 Ncm Thermal Characteristic Symbol RJC Parameter Thermal Resistance, Junction to Case, Max Ratings Unit 1* / 0.44** C/W * Per leg, ** Per Device Semiconductor Components Industries, LLC, 2016 FFSH20120ADN_F155 Rev.1.3 1 www.onsemi.com FFSH20120ADN_F155 -- Silicon Carbide Schottky Diode October 2016 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSH20120ADN_F155 FFSH20120ADN TO-247 Long Lead Tube N/A N/A 30 units Electrical Characteristics TC = 25 C unless otherwise noted. (per leg) Symbol Parameter VF Forward Voltage IR Reverse Current QC Total Capacitive Charge C Total Capacitance Test Conditions IF = 10 A, TC = 25 oC IF = 10 A, TC = 125 oC IF = 10 A, TC = 175 oC VR = 1200 V, TC = 25 oC VR = 1200 V, TC = 125 oC VR = 1200 V, TC = 175 oC V = 800 V VR = 1 V, f = 100 kHz VR = 400 V, f = 100 kHz VR = 800 V, f = 100 kHz Min. Typ. Max. - 1.45 1.7 2 62 612 58 47 1.75 2 2.4 200 300 400 - Unit V A nC pF Notes: 1: EAS of 100 mJ is based on starting TJ = 25 C, L = 0.5 mH, IAS = 20 A, V = 150 V. Typical Characteristics TJ = 25 C unless otherwise noted (per leg). Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 1 10 20 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) TJ = -55 oC TJ = 25 oC 15 TJ = 75 oC 10 TJ = 125 oC TJ = 175 oC 5 0 0 10 TJ = 175 oC TJ = 125 oC -1 10 TJ = 75 oC TJ = 25 oC -2 10 TJ = -55 oC -3 10 0 1 2 3 4 200 400 VF, FORWARD VOLTAGE (V) Figure 3. Reverse Characteristics 160 IF, PEAK FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) TJ = -55 oC TJ = 25 oC TJ = 75 oC 0.6 0.4 TJ = 125 oC 0.2 0.0 1000 TJ = 175 oC 1100 1200 1300 1400 FFSH20120ADN_F155 Rev.1.3 1000 1200 D = 0.1 120 D = 0.2 80 D = 0.3 40 D = 0.5 D = 0.7 0 25 1500 D=1 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) VR, REVERSE VOLTAGE (V) Semiconductor Components Industries, LLC, 2016 800 Figure 4. Current Derating 1.0 0.8 600 VR, REVERESE VOLTAGE (V) 2 www.onsemi.com FFSH20120ADN_F155 -- Silicon Carbide Schottky Diode Package Marking and Ordering Information Figure 6. Capacitive Charge vs. Reverse Voltage Figure 5. Power Derating 80 QC, CAPACITIVE CHARGE (nC) PTOT, POWER DISSIPATION (W) 150 100 50 0 25 50 75 100 125 150 60 40 20 0 175 0 o 400 600 800 1000 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( C) Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy 30 EC, CAPACITIVE ENERGY (J) 5000 CAPACITANCE (pF) 200 1000 100 10 0.1 1 10 100 20 10 0 1000 VR, REVERESE VOLTAGE (V) 0 200 400 600 800 1000 VR, REVERVE VOLTAGE (V) Figure 9. Junction-to-Case Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CIRCLE-DESCENDING ORDER 1 0.5 PDM 0.2 t1 0.1 0.05 -4 10 0.1 0.05 0.02 0.01 SINGLE PULSE t2 NOTES: ZJC(t) = r(t) x RJC RJC = 1 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Semiconductor Components Industries, LLC, 2016 FFSH20120ADN_F155 Rev.1.3 3 www.onsemi.com FFSH20120ADN_F155 -- Silicon Carbide Schottky Diode Typical Characteristics TJ = 25 C unless otherwise noted (per leg, continue). FFSH20120ADN_F155 -- Silicon Carbide Schottky Diode Test Circuit and Waveforms Figure 10. Unclamped Inductive Switching Test Circuit & Waveform L = 0.5mH Semiconductor Components Industries, LLC, 2016 FFSH20120ADN_F155 Rev.1.3 4 www.onsemi.com 4.82 E 4.58 15.87 E 15.37 A B 12.81 E 4.13 3.53 6.85 6.61 3.65 E 3.51 0.254 M 5.58 E 5.34 5.20 4.96 1.35 0.51 13.08 MIN 20.82 E 20.32 1 3 3 1.87 1.53(2X) 3.93 E 3.69 1.60 20.25 E 19.75 2.77 2.43 0.71 0.51 5.56 2.66 2.29 11.12 1.35 1.17 0.254 M B A M NOTES: UNLESS OTHERWISE SPECIFIED. A. PACKAGE REFERENCE: JEDEC TO-247, ISSUE E, VARIATION AB, DATED JUNE, 2004. B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5 - 1994 E DOES NOT COMPLY JEDEC STANDARD VALUE F. DRAWING FILENAME: MKT-TO247G03_REV02 1 B A M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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