© 2010 IXYS All rights reserved 1 - 3
20100203a
MDD 172
IFRMS = 2x 300 A
IFAVM = 2x 190 A
VRRM = 800-1800 V
Dimensions in mm (1 mm = 0.0394")
Symbol Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM 20 mA
VFIF = 300 A; TVJ = 25°C 1.15 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 0.8 mΩ
QSTVJ = 125°C; IF = 300 A, -di/dt = 50 A/μs 550 μC
IRM 235 A
RthJC per diode; DC current 0.21 K/W
per module other values 0.105 K/W
RthJK per diode; DC current see Fig. 6/7 0.31 K/W
per module 0.155 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
VRSM VRRM Type
VV
900 800 MDD 172-08N1
1300 1200 MDD 172-12N1
1500 1400 MDD 172-14N1
1700 1600 MDD 172-16N1
1900 1800 MDD 172-18N1
Symbol Conditions Maximum Ratings
IFRMS TVJ = TVJM 300 A
IFAVM TC = 100°C; 180° sine 190 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 6600 A
VR = 0 t = 8.3 ms (60 Hz), sine 7290 A
TVJ = TVJM t = 10 ms (50 Hz), sine 5600 A
VR = 0 t = 8.3 ms (60 Hz), sine 6200 A
I2dt TVJ = 45°C t = 10 ms (50 Hz), sine 218 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 221 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 157 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 160 000 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
Weight Typical including screws 120 g
Features
zInternational standard package
zDirect copper bonded Al2O3 -ceramic
base plate
zPlanar passivated chips
zIsolation voltage 3600 V~
zUL registered, E 72873
Applications
zSupplies for DC power equipment
zDC supply for PWM inverter
zField supply for DC motors
zBattery DC power supplies
Advantages
zSpace and weight savings
zSimple mounting
zImproved temperature and power
cycling
zReduced protection circuits
High Power
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
312
IXYS reserves the right to change limits, test conditions and dimensions
3
12
© 2010 IXYS All rights reserved 2 - 3
20100203a
MDD 172
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge:Power dissipation vs. direct output current and ambient temperature
R = resistive load, L = inductive load
© 2010 IXYS All rights reserved 3 - 3
20100203a
MDD 172
Fig. 5 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature
Fig. 6 Transient thermal impedance junction to case (per diode)
Fig. 7 Transient thermal impedance junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.31
180°0.323
120°0.333
60°0.360
30°0.395
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
4 0.1 1.29
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.210
180°0.223
120°0.233
60°0.260
30°0.295
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
