SOT-23 TRANSISTORS & DIODES SILICON ABRUPT TUNER DIODES Reverse Nominal capacitance | Capacitance ratio Qa breakdown at Vp =2V, f=1MHz f=1MHz at Va=3V Type Voltage Crot PF C2/C29 f=50MHz Vp, Volts max. min typ max. min. min. FMMV2101 30 6.12 6.8 7.48 2.7 450 FMMV2102 30 7.4 8.2 9.1 2.7 450 FMMV2103 30 9.0 10.0 | 11.0 2.7 400 FMMV2104 30 10.8 12.0 | 13.2 2.8 400 FMMV 2105 30 13.5 15.0 | 16.5 2.8 400 FMMV2106 30 16.2 18.0 | 19.8 2.8 350 FMMV2107 30 19.8 22.0 | 24.2 2.8 350 FMMV2108 30 24.3 27.0 | 29.7 2.8 300 FMMV2109 30 29.7 33.0 | 36.3 2.8 200 ZENER DIODES Type Range (V) Voltage tolerance % = | Prog MW | Izpny MA | Iepny MA BZX84 2V7 to 47V 5 or 10 350 200 200 FMMZ5232-5257 5V6 to 33V 5 350 200 200 SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings tr Max. Ve Type Description Vr le | max at lp =mA Volts | mA ns | 10 50 100 BAS21 Single diode 200 | 200 | 50 -/-/1.0 BAS20 Single diode 150 | 200 | 50 -/-/1.0 BAS19 Single diode 100 | 200 | 50 ~/-/1.0 BAS16 Single diode 75 | 100 6 | 0.855/1.0/ - FMMD914 Single diode 75 75 | 4/8 1.0/-/- HD3A Single diode 75 | 100 6 1.0/-/- BAL99 Single diode 70 | 100 6 |0.855/1.1/1.3 BARS9 Single diode 70 | 100 6 |0.855/1.1/1.3 BAL74 Single diode 50 | 150 4 -/-/1.0 BAR74 Single diode 50 |; 150 4 -/-/1.0 FMMD6050 Single diode 70 | 100 6 -/-/1.1 FMMD6100 Dual diode with common cathode 70 | 200 5 0.7/-/1.1 BAV70 Dual diode with common cathode 70 | 100 6 |0.855/1.1/1.3 BAV74 Dual diode with common cathode 50 | 150 4 -/-/1.0 HD2A Dual diode with common cathode 75 | 100 6 1.0/-/- FMMD2837 Dual diode with common cathode 30 | 100 6 1.0/1.0/1.2 FMMD2838 Dual diode with common cathode 50 | 100 6 1.0/1.0/1.2 BAV39 Dual diode with series connection 70 | 100 6 |0.855/1.1/1.3 FMMD7000 Dual diode with series connection 70 | 200 15 0.7/-/1.1 BAWS56 Dual diode with common anode 70 | 100 6 |0.855/1.1/1.3 HD4A Dual diode with common anode 75 | 100 6 1.0/-/- FMMD 2836 Dual diode with common anode 75 | 100 6 1.0/1.0/1.2 FMMD2835 Dual diode with common anode 35 | 100 6 1.0/1.0/1.2 3-22R.F. TRANSISTORS AND DIODES TABLE 5: SOT-23 ABRUPT TUNER DIODES Reverse Nominal capacitance Capacitance ratio Qa breakdown at Va=4V, f=1MHz f=1MHz at Va =4V Type Voltage Crot PF Cy/C39 f=50MHz | Marking Vp Volts max. | Min. Typ. Max. Min. Min. FMMV 2101 30 6.12 6.8 7.48 2.7 450 6R FMMV 2102 30 7.4 8.2 9.1 2.7 450 6F FMMV 2103 30 9.0 10.0 | 11.0 2.7 400 6G FMMV 2104 30 10.8 12.0 | 13.2 2.8 400 6H FMMV 2105 30 13.5 15.0 ; 16.5 2.8 400 65 FMMV2106 30 16.2 18.0 | 19.8 2.8 350 6K FMMV2107 30 19.8 22.0 | 24.2 2.8 350 6L FMMV 2108 30 24.3 27.0 | 29.7 2.8 300 6M FMMV 2109 30 29.7 33.0 } 36.3 2.8 200 6N TABLE 6: E-LINE SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications under pulsed conditions include ultra high speed switching, clamping, sampling gates and pulse shaping. CHARACTERISTICS (at 25C ambient temperatrue) Ver at VF at Cr at Va =O0V Type Ip =10pA Ip =1mA In lp at Ve=1V|_ f=1MHZ Prot * min. (volts) | max. (mV) | max. nA at Vp (volts) | min. (mA) | max. (pF) mW 2C2800 70 410 200 50 15 2.0 250 2c2811 15 410 100 10 20 1.2 250 ZC5800 50 410 200 35 15 2.0 250 *Power Dissipation derate to zero at 200C and measured using an infinite heat sink. Operating Temperature t,,,p 65 to +200C. Storage Temperature T,., 65 to +200C Note: Matched pairs or Quads of diodes can be supplied on request. STANDARD MATCHING SPECIFICATIONS {all packages): ZC2800-ZC5800 Max. AV=20mV, |; =0.5 to 5.0mA Max. AC=0.2pF, Va =OV 2C2811 Max. AV=20mvV, I; =1 to 10mA Max. AC=0.2pF, Vp =OV TABLE 7: SOT-23 SCHOTTKY BARRIER DIODES Ver at Ve at Cy at VR =O0V Type Ip=10pA | Ip=1ImA IR lp at Ve=1V}| f=1MHZ | Marking Min. (volts) |Max. (mV)| Max. nA at Vp (volts) | Min. (mA) Max. (pF) ZC 2800E 70 410 200 50 15 2.0 E6 *ZC2810E 20 410 100 15 35 1.2 E7 ZC2811E 15 410 100 10 20 1.2 E8 ZC5800E 50 410 200 35 15 2.0 EQ *Not recommended for New Design - In (ZC2810E) 9-4