SFH615A 5.3 kV TRIOS Optocoupler High Reliability FEATURES * Variety of Current Transfer Ratios at IF=10 mA - SFH615A-1, 40-80% - SFH615A-2, 63-125% - SFH615A-3, 100-200% - SFH615A-4, 160-320% - SFH615A-12, 40-125% - SFH615A-23, 63-200% - SFH615A-34, 100-320% - SFH615A-13, 40-200% - SFH615A-24, 63-320% - SFH615A-14, 40-320% * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Withstand Test Voltage, 5300 VRMS * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100" (2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * V VDE 0884 Available with Option 1 D E DESCRIPTION The SFH615A features a large variety of transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of >8.0 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Dimensions in inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) Anode 1 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 3-9 .008 (.20) .012 (.30) .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage ...............................................................................6.0 V DC Forward Current ...................................................................... 60 mA Surge Forward Current (tP10 s) ....................................................2.5 A Total Power Dissipation .............................................................. 100 mW Detector Collector-Emitter Voltage...................................................................70 V Emitter-Collector Voltage..................................................................7.0 V Collector Current ........................................................................... 50 mA Collector Current (tP1.0 ms) ...................................................... 100 mA Total Power Dissipation .............................................................. 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74, t=1.0 s ....................................................... 5300 VRMS Creepage ....................................................................................7.0 mm Clearance....................................................................................7.0 mm Insulation Thickness between Emitter and Detector .................0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1................................................ 175 Isolation Resistance VIO=500 V, TA=25C ................................................................ 1012 VIO=500 V, TA=100C .............................................................. 1011 Storage Temperature Range..............................................-55 to +150C Ambient Temperature Range ............................................-55 to +100C Junction Temperature..................................................................... 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) .......................................... 260C 2000 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG * Regensburg, Germany www.osram-os.com * +49-941-202-7178 1 February 23, 2000-14 Characteristics (TA=25C) Parameter Sym. Value Unit Condition Forward Voltage VF 1.25(1.65) V IF=60 mA Emitter (IR GaAs) Reverse Current IR 0.01(10) A VR=6.0 V Capacitance C0 13 pF VR=0 V, f=1.0 MHz Thermal Resistance RthJA 750 K/W -- Capacitance CCE 5.2 pF VCE=5.0 V, f=1.0 MHz Thermal Resistance RthJA 500 K/W -- Collector-Emitter Saturation Voltage VCEsat 0.25(0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CC 0.4 pF -- Detector (Si Phototransistor) Package Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-emitter Leakage Current Parameter -1 -2 -3 -23 -34 -24 -14 Unit IC/ IF (IF=10 mA) 40-80 63-125 100-200 160-320 40-125 -4 -12 63-200 100-320 40-200 63-320 40-320 % 70(>34) 45(>22) 70(>34) 45(>22) 30(>13) 90(>56) 30(>13) -13 IC/ IF (IF=1.0 mA) 30(>13) 45(>22) Collector-Emitter Leakage Current, ICEO, VCE=10 V 2.0(50) 2.0(50) 5.0(100) 5.0(100) 2.0(50) 5.0(100) 5.0(100) 5.0(100) 5.0(100) 5.0(100) nA Table 1. IF=10 mA, VCC=5.0 V, TA=25C, without Saturation Parameter Sym. Value Unit Load Resistance RL 75 Turn-on Time ton 3.0 s Rise Time tr 2.0 Turn-off Time toff 2.3 Fall Time tf 2.0 Cut-off Frequency FCO 250 Figure 1. Switching Times (Typical) Linear Operation (without saturation) IF Sym. Figure 2. Switching Operation (with saturation) Switching Time by Dash Numbers Unit -1, -12, -13 -2, -3, -23 -4, -34, -24 IF=10 mA IF=5.0 mA 1000 1000 1000 Turn-on Time ton 3.0 4.2 6.0 s Rise Time 2.0 3.0 4.6 Turn-off Time toff 18 23 25 Fall Time 11 14 15 RL tr tf VCC=5 V 47 kHz IF=20 mA Load Resistance RL=75 IC Table 2. VCC=5.0 V, TA=25C, with Saturation Parameter 30(>13) 2000 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG * Regensburg, Germany www.osram-os.com * +49-941-202-7178 IF 1 k VCC=5 V 47 SFH615A 2 February 23, 2000-14 Figure 6. Transistor Capacitance (typical) vs. Collector-emitter Voltage TA=25C, f=1.0 MHz Figure 3. Current Transfer Ratio (typical) vs. Temperature IF=10 mA, VCE=5.0 V 103 20 % pF 5 IC IF 4 C 15 3 2 102 10 1 CCE 5 5 101 -25 0 25 C 50 TA 0 10-2 75 Figure 4. Output Characteristics (typical) Collector Current vs. Collector-emitter Voltage TA=25C 104 mA 5 IF=14 mA D= 0 0.005 0.01 0.02 0.05 0.1 IF IC 12 mA 20 10-0 Ve 101 V 102 Figure 7. Permissible Pulse Handling Capability. Forward Current vs. Pulse Width Pulse cycle D=parameter, TA=25C 30 mA 10-1 103 10 mA D= tp tp IF T T 5 8.0 mA 10 1.0 mA 6.0 mA 102 4.0 mA 5 2.0 mA 101 10-5 0 0 5 10 0.2 0.5 DC V 15 10-4 10-3 10-2 10-1 100 s 101 tp VCE Figure 5. Diode Forward Voltage (typical) vs. Forward Current Figure 8. Permissible Power Dissipation vs. Ambient Temperature 120 1.2 V mA 25 50 75 VF 90 1.1 IF 60 1.0 30 0.9 10-1 0 100 101 mA 0 102 2000 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG * Regensburg, Germany www.osram-os.com * +49-941-202-7178 25 50 75 C 100 TA IF SFH615A 3 February 23, 2000-14 Figure 9. Permissible Diode Forward Current vs. Ambient Temperature 200 mW 150 Transistor Ptot 100 Diode 50 0 0 25 50 75 C 100 TA 2000 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG * Regensburg, Germany www.osram-os.com * +49-941-202-7178 SFH615A 4 February 23, 2000-14