BF622,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 21 2004 Dec 14

DISCRETE SEMICONDUCTORS

BF620; BF622

NPN high-voltage transistors

ook, halfpage

M3D109

2004 Dec 14 2

NXP Semiconductors Product data sheet

NPN high-voltage transistors BF620; BF622

FEATURES

•Low current (ma x. 50 mA)

•High voltage (max. 300 V).

APPLICATIONS

•Video output stages.

DESCRIPTION

NPN high-voltage transistor in a SOT89 plastic package.

PNP complements: BF621 and BF623.

PINNING

PIN DESCRIPTION

1emitter

2collector

3base

321 sym04

Fig.1 Simplified outline (SOT89 ) and symbo l .

MARKING

TYPE NUMBER MARKING CODE

BF620 DC

BF622 DA

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BF620 SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

BF622

2004 Dec 14 3

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

LIMITING VALUES

In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).

Notes

1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and standard footprint.

2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for colle ctor 1 cm2.

3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for colle ctor 6 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BF620 −300 V

BF622 −250 V

VCEO collector-emitter voltage open base

BF620 −300 V

BF622 −250 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −50 mA

ICM peak collector current −100 mA

IBM peak base current −50 mA

Ptot total power dissipation Tamb ≤ 25 °C

note 1 −0.5 W

note 2 −0.8 W

note 3 −1.1 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Dec 14 4

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

Tamb (°C)

−75 17512525 75−25

006aaa238

800

400

1200

1600

Ptot

(mW)

(1)

(2)

(3)

Fig.2 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) FR4 PCB; standard footprint .

2004 Dec 14 5

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

THERMAL CHARACTE RISTICS

Notes

1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and standard footprint.

2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for colle ctor 1 cm2.

3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for colle ctor 6 cm2.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to

ambient in free air

note 1 250 K/W

note 2 156 K/W

note 3 113 K/W

Rth(j-s) thermal resistance from junction to

soldering point 30 K/W

006aaa235

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(6)

(7)

(8)

(9)

(10)

(1)

(5)

(4)

(3) (2)

Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values .

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on FR4 printed-circuit board; standard footprint.

2004 Dec 14 6

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

006aaa236

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(6)

(7)

(8)

(5)

(1)

(10)

(9)

(4)

(3)

(2)

Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values .

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounti ng pad for collector 1 cm2.

006aaa237

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(6)

(7)

(8)

(10)

(1)

(5)

(4)

(3)

(9)

(2)

Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values .

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounti ng pad for collector 6 cm2.

2004 Dec 14 7

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current IE = 0 A; VCB = 200 V −10 nA

IE = 0 A; VCB = 200 V; Tj = 150 °C−10 µA

IEBO emitter-base cu t-off current IC = 0 A; VEB = 5 V −50 nA

hFE DC current gain IC = 25 mA; VCE = 20 V 50 −

VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5 mA −600 mV

Cre feedback capacitance IC = ic = 0 A; VCE = 30 V; f = 1 MHz −1.6 pF

fTtransition frequen c y IC = −10 mA; VCE = 10 V; f = 100 MHz 60 −MHz

2004 Dec 14 8

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Dec 14 9

NXP Semiconductors Pr oduct data sheet

NPN high-voltage transistors BF620; BF622

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or completing a design.

2. The product s tatus of device(s) described in this document may ha ve changed sinc e this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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does not give any representations or warranties,

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

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equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reas onably be

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accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other co nditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp10 Date of release: 2004 Dec 14 Document orde r number: 9397 750 13867