Number: DB-084
November 2012, Revision D
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Very Small Outline Fl at Lead Plastic Package
Schottky Barrier Diode
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -55 to +125 °C
TJ Operating Junction Temperature +125 °C
VRRM Repetitive Peak Reverse Voltage 40 V
VR Reverse Voltage 30 V
IF Forward Current 30 mA
IFSM Non-Repetitive Peak Forward Current
(at 8.3ms single half sine-w ave) 200 mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Low Forward Voltage Drop
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODES:
Device Type Device Marking
RB751V-40 B5
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=10µA 30 Volts
IR Reverse Leakage Current VR=30V 0.5 µA
VF Forward Voltage TCBAT42WS, IF=1mA 0.37 Volts
RB751V-40