TetraFET SEME SMRF1001 LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH - PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE2 PIN 5 GATE 1 DIM A B C D E F G H I J K M N Millimetres 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R .013 2.16 * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS Tol. .13 .01 5 .76 .13 .13 .13 .03 .13 .13 .13 .02 .13 Inches .254 .065R 45 .650 .255 .725 .060 .190 .975 .060 .032R .005 .085 Tol. .005 .005 5 .030 .005 .005 .005 .010 .005 .001 .005 .001 .005 * LOW NOISE * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage* Gate - Source Breakdown Voltage* Drain Current* Storage Temperature Maximum Operating Junction Temperature 175W 70V 20V 10A -65 to 150C 200C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/93 SEME SMRF1001 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS Drain-Source Typ. Max. Unit VGS = 0 |D = 100mA VDS = 28V VGS = 0 2 mA VGS = 20V VDS = 0 1 mA ID = 10mA VDS = VGS 6 V Forward Transconductance* VDD = 10V ID = 2A Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VGS(th) Gate Threshold Voltage* 70 3 V 1.6 mhos Common Source Power Gain TOTAL DEVICE PO = 40W 13 dB Drain Efficiency VDS = 28V 50 % VSWR Load Mismatch Tolerance f = 400MHz 20:1 -- gfs GPS h IDQ = 0.8A Ciss Input Capacitance PER SIDE VDS = 28V VGS = -5V f = 1MHz Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 60 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 5 pF * Pulse Test: 120 pF Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Semelab plc. Thermal Resistance Junction - Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Max. 1.0C / W Prelim. 11/93