Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DIM Millimetres Tol. Inches Tol.
A 6.45 .13 .254 .005
B 1.65R .01 .065R .005
C 45° 5° 45° 5°
D 16.51 .76 .650 .030
E 6.47 .13 .255 .005
F 18.41 .13 .725 .005
G 1.52 .13 .060 .005
H 4.82 .03 .190 .010
I 24.76 .13 .975 .005
J 1.52 .13 .060 .001
K 0.81R .13 .032R .005
M .013 .02 .005 .001
N 2.16 .13 .085 .005
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage*
BVGSS Gate – Source Breakdown Voltage*
ID(sat) Drain Current*
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
* Per Side
175W
70V
±20V
10A
–65 to 150°C
200°C
LAB
SEME
SMRF1001
MECHANICAL DATA GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 500MHz
PUSH – PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1
PIN 3 DRAIN 2 PIN 4 GATE2
PIN 5 GATE 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Prelim. 11/93
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VGS = 0 |D= 100mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDD = 10V ID= 2A
PO= 40W
VDS = 28V IDQ = 0.8A
f = 400MHz
VDS = 28V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
V
mA
m
A
V
mhos
dB
%
—
pF
pF
pF
PER SIDE
TOTAL DEVICE
LAB
SEME
SMRF1001
Prelim. 11/93
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
70
2
1
36
1.6
13
50
20:1
120
60
5
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 1.0°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300
m
s , Duty Cycle
£
2%
Parameter Test Conditions Min. Typ. Max. Unit
