STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB * High speed switching * Tight parameters distribution 3 1 * Safe paralleling DPAK * Low thermal resistance * Short-circuit rated TAB * Ultrafast soft recovery antiparallel diode 3 3 1 2 1 2 TO-220 TO-220FP Applications * Motor control * UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Packages Packaging STGB10H60DF GB10H60DF DPAK Tape and reel STGF10H60DF GF10H60DF TO-220FP Tube STGP10H60DF GP10H60DF TO-220 Tube October 2013 This is information on a product in full production. DocID025111 Rev 2 1/24 www.st.com Contents STGB10H60DF, STGF10H60DF, STGP10H60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2/24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 DocID025111 Rev 2 STGB10H60DF, STGF10H60DF, STGP10H60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter TO-220 Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 C TO-220FP DPAK 600 V 20 20(1) A 10 (1) 10 A 40 40(1) A IC Continuous collector current at TC = 100 C ICP (2) VGE Pulsed collector current Unit Gate-emitter voltage 20 V Continuous forward current TC = 25 C 20 20(1) Continuous forward current at TC = 100 C 10 10(1) IFP(2) Pulsed forward current 40 40(1) A PTOT Total dissipation at TC = 25 C 115 30 W TSTG Storage temperature range - 55 to 150 Operating junction temperature - 55 to 175 A IF C TJ 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter TO-220 DPAK TO-220FP Unit RthJC Thermal resistance junction-case IGBT 1.3 5 C/W RthJC Thermal resistance junction-case diode 2.78 6.25 C/W RthJA Thermal resistance junction-ambient DocID025111 Rev 2 62.5 C/W 3/24 24 Electrical characteristics 2 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.5 VGE = 15 V, IC = 10 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 10 A TJ = 175 C VGE(th) Max. 600 VGE = 15 V, IC = 10 A VCE(sat) Typ. 1.95 1.65 V 1.7 5.0 6.0 7.0 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic Symbol 4/24 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 10 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge DocID025111 Rev 2 Min. Typ. Max. Unit - 1300 - pF - 60 - pF - 30 - pF - 57 - nC - 8 - nC - 27 - nC STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) Parameter Test conditions Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 , VGE = 15 V Current rise time tr (di/dt)on td(on) tr Turn-on current slope Turn-on delay time Current rise time (di/dt)on tr(Voff) td(off) tf Min. Turn-on current slope VCE = 400 V, IC = 10 A, RG = 10 , VGE = 15 V TJ = 175 C Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 , VGE = 15 V Turn-off delay time Current fall time tr(Voff) Off voltage rise time td(off) Turn-off delay time VCE = 400 V, IC = 10 A, RG = 10 , VGE = 15 V TJ = 175 C tf Current fall time tsc Short-circuit withstand time VCC 360 V, VGE = 15 V, RG = 10 3 Typ. Max. Unit 19.5 ns 6.9 ns 1170 A/s 20 ns 6.8 ns 1176 A/s 19.6 ns 103 ns 73 ns 28 ns 104 ns 110 ns 5 s Table 7. Switching energy (inductive load) Symbol Eon (1) Eoff (2) Ets Test conditions Turn-on switching losses Turn-off switching losses VCE = 400 V, IC = 10 A, RG = 10 , VGE = 15 V Total switching losses Eon (1) Turn-on switching losses Eoff (2) Turn-off switching losses Ets 1. Parameter Total switching losses VCE = 400 V, IC = 10 A, RG = 10 , VGE = 15 V TJ = 175 C Min. Typ. Max. Unit - 83 - J - 140 - J - 223 - J - 148 - J - 214 - J - 362 - J Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID025111 Rev 2 5/24 24 Electrical characteristics STGB10H60DF, STGF10H60DF, STGP10H60DF Table 8. Collector-emitter diode Symbol 6/24 Parameter Test conditions VF Forward on-voltage IF = 10 A IF = 10 A, TJ = 175 C trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Vr = 60 V; IF = 10 A; diF/dt = 100 A / s Vr = 60 V; IF = 10 A; diF/dt = 100 A / s TJ = 175 C DocID025111 Rev 2 Min. Typ. Max. Unit 1.7 1.3 2.2 - V V - 107 ns - 120 nC - 2.24 A - 161 ns - 362 nC - 4.5 A STGB10H60DF, STGF10H60DF, STGP10H60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for D2PAK and TO-220 GIPD281020131339FSR Ptot (W) Figure 3. Collector current vs. case temperature for D2PAK and TO-220 GIPD011020131146FSR IC (A) 140 20 120 100 15 80 10 60 40 5 VGE 15V, TJ 175 C 0 0 25 20 0 0 50 25 75 100 125 150 175 TC(C) Figure 4. Power dissipation vs. case temperature for TO-220FP GIPD281020131351FSR Ptot (W) 50 75 100 125 150 175 TC(C) Figure 5. Collector current vs. case temperature for TO-220FP GIPD281020131401FSR IC (A) 30 15 20 10 10 5 VGE 15V, TJ 175 C 0 0 50 100 150 Figure 6. Output characteristics (TJ = 25C) GIPD281020131405FSR IC (A) 11V VGE=15V 0 0 TC(C) 50 100 150 TC(C) Figure 7. Output characteristics (TJ = 175C) GIPD281020131411FSR IC (A) 11V VGE=15V 13V 30 30 9V 9V 20 20 10 10 7V 0 0 1 2 3 4 VCE(V) DocID025111 Rev 2 0 0 1 2 3 4 VCE(V) 7/24 24 Electrical characteristics STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 8. VCE(sat) vs. junction temperature GIPD281020131418FSR VCE(sat) (V) IC= 20A VGE= 15V 2.2 Figure 9. VCE(sat) vs. collector current GIPD281020131424FSR VCE(sat) (V) TJ= 175C VGE= 15V 2.2 2 2 TJ= 25C 1.8 1.8 IC= 10A 1.6 1.6 1.4 1.4 IC= 5A 1.2 TJ= -40C 1.2 1 -50 0 50 100 150 Figure 10. Collector current vs. switching frequency for D2PAK and TO-220 GIPD281020131430FSR Ic [A] 40 1 TJ(C) 2 6 10 14 18 IC(A) Figure 11. Collector current vs. switching frequency for TO-220FP GIPD281020131440FSR Ic [A] Tc=80C 15 30 Tc=80C Tc=100 C Tc=100 C 10 20 5 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 10 0 1 0 f [kHz] 10 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 1 f [kHz] 10 Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for D2PAK and TO-220 TO-220FP GIPD281020131452FSR IC (A) 10 GIPD281020131505FSR IC (A) 10 10 s 10 s 100 s 1 0.1 8/24 Single pulse Tc= 25C, TJ<= 175C VGE= 15V 1 10 100 100 s 1 1 ms VCE(V) 0.1 DocID025111 Rev 2 Single pulse Tc= 25C, TJ<= 175C VGE= 15V 1 10 100 1 ms VCE(V) STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 14. Transfer characteristics Figure 15. Diode VF vs. forward current GIPD281020131513FSR IC (A) Electrical characteristics GIPD281020131551FSR VF (V) TJ= -40C 35 VCE=5V 2.1 30 25 TJ= 25C 1.7 20 15 TJ=25C 5 0 6 1.3 TJ=175C 10 TJ= 175C TJ=-40C 8 7 10 9 Figure 16. Normalized VGE(th) vs junction temperature GIPD281020131600FSR VGE(th) (norm) 1.1 0.9 4 VGE(V) IC= 1mA VCE= VGE 8 12 16 20 IF(A) Figure 17. Normalized V(BR)CES vs. junction temperature GIPD041020131502FSR V(BR)CES (norm) 1.1 IC= 2mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TJ(C) Figure 18. Capacitance variation 0.9 -50 100 150 TJ(C) GIPD281020131606FSR VGE (V) IC= 10A IGE= 1mA VCC= 480V 16 Cies 1000 50 Figure 19. Gate charge vs. gate-emitter voltage GIPD281020131602FSR C (pF) 0 12 8 100 Coes 10 0.1 Cres 1 10 VCE(V) DocID025111 Rev 2 4 0 0 20 40 60 Qg(nC) 9/24 24 Electrical characteristics STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 20. Switching loss vs collector current E (J) GIPD281020131611FSR VCC = 400V, VGE = 15V, RG = 10, TJ = 175C Figure 21. Switching loss vs gate resistance 260 300 EOFF 220 200 GIPD281020131618FSR E (J) VCC = 400 V, VGE = 15 V, IC = 10 A, TJ = 175 C EOFF EON 180 EON 100 140 0 0 4 8 12 16 20 Figure 22. Switching loss vs temperature E (J) 100 0 IC(A) 10 30 20 40 RG() Figure 23. Switching loss vs collector-emitter voltage GIPD281020131623FSR VCC= 400V, VGE= 15V, RG= 10, IC= 10A E (J) 250 200 EOFF GIPD281020131630FSR TJ= 175C, VGE= 15V, RG= 10, IC= 10A 200 EOFF 150 150 EON 100 EON 100 50 0 -50 10/24 50 0 50 100 150 TJ(C) DocID025111 Rev 2 0 200 250 300 350 400 450 VCE(V) STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics Figure 24. Short circuit time and current vs VGE Figure 25. Switching times vs. collector current GIPD281020131634FSR ISC(A) tsc (s) t (ns) VCC= 360V, RG= 10 ISC 14 GIPD281020131641FSR TJ= 175C, VGE= 15V, RG= 10, VCC= 400V 200 tSC 12 tf tdoff 10 100 150 tr 8 100 tdon 6 4 12 11 10 13 50 VGE(V) 14 Figure 26. Switching times vs. gate resistance 10 0 TJ= 175C, VGE= 15V, IC= 10A, VCC= 400V Irm (A) tdoff 12 16 IC(A) GIPD281020131713FSR IF = 10A, Vr = 400V 20 tf 100 8 Figure 27. Reverse recovery current vs. diode current slope GIPD281020131655FSR t (ns) 4 TJ =175C 16 12 10 tr tdon 8 TJ =25C 4 1 0 10 20 30 0 0 RG() 40 Figure 28. Reverse recovery time vs. diode current slope 400 600 800 di/dt(A/s) Figure 29. Reverse recovery charge vs. diode current slope GIPD281020131720FSR trr (s) 200 Qrr (nC) IF = 10A, Vr = 400V GIPD281020131724FSR IF = 10A, Vr = 400V 500 160 TJ =175C 400 120 TJ =175C 80 300 TJ =25C 200 40 0 0 100 TJ =25C 200 400 600 800 di/dt(A/s) DocID025111 Rev 2 0 0 200 400 600 800 di/dt(A/s) 11/24 24 Electrical characteristics STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 30. Reverse recovery energy vs. diode current slope GIPD281020131728FSR Err (J) IF = 10A, Vr = 400V 140 120 TJ =175C 100 80 TJ =25C 60 40 20 0 12/24 200 400 600 800 di/dt(A/s) DocID025111 Rev 2 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics Figure 31. Thermal impedance for IGBT ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 32. Thermal impedance for diode DocID025111 Rev 2 13/24 24 Test circuits 3 STGB10H60DF, STGF10H60DF, STGP10H60DF Test circuits Figure 33. Test circuit for inductive load switching Figure 34. Gate charge test circuit AM01504v1 Figure 35. Switching waveform AM01505v1 Figure 36. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 14/24 DocID025111 Rev 2 AM01507v1 STGB10H60DF, STGF10H60DF, STGP10H60DF 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. DPAK mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0 8 DocID025111 Rev 2 15/24 24 Package mechanical data STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 37. DPAK drawing 0079457_T Figure 38. DPAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 16/24 DocID025111 Rev 2 Footprint STGB10H60DF, STGF10H60DF, STGP10H60DF Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID025111 Rev 2 17/24 24 Package mechanical data STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 39. TO-220FP drawing 7012510_Rev_K_B 18/24 DocID025111 Rev 2 STGB10H60DF, STGF10H60DF, STGP10H60DF Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID025111 Rev 2 19/24 24 Package mechanical data STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 40. TO-220 type A drawing BW\SH$B5HYB7 20/24 DocID025111 Rev 2 STGB10H60DF, STGF10H60DF, STGP10H60DF 5 Packaging mechanical data Packaging mechanical data Table 12. DPAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID025111 Rev 2 Min. Max. 330 13.2 26.4 30.4 21/24 24 Packaging mechanical data STGB10H60DF, STGF10H60DF, STGP10H60DF Figure 41. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 42. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 22/24 DocID025111 Rev 2 STGB10H60DF, STGF10H60DF, STGP10H60DF 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 12-Aug-2013 1 Initial release. 31-Oct-2013 2 Document status promoted from preliminary to production data. Inserted Section 2.1: Electrical characteristics (curves). Minor text changes. DocID025111 Rev 2 23/24 24 STGB10H60DF, STGF10H60DF, STGP10H60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. 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