Fea tures
•Ceramic surface mount package
•Hermetically sealed
•Small package minimizes circuit board
area required
•Electrical performance similar to a
2N2907
•Qualification per MIL-PRF-19500/558
De scrip tion
The JANTX2N6987U is a hermetically
sealed, ceramic surface-mount device,
consisting of 4 silicon PNP transistors.
The 20 pin ceramic package is ideal for
designs where board space and device
weight are important design
considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V, PD = 250
mW each transistor, TA = 25o C. Refer
to MIL-PRF-19500/558 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Emitter Volt age............................................ 60 V
Collector- Base Volt age ............................................. 60 V
Emitter- Base Volt age................................................ 5 V
Col lec tor Cur rent Con tinu ous...................................... 600 mA
Op er at ing and Stor age (TJ, Tstg)........................... -65o C to +200o C
Power Dis si pa tion (sin gle tran sis tor, no heat sink) ....................... 0.5 W
Power Dis si pa tion (to tal de vice) ..................................... 1 W(1)
Iso la tion Volt age ................................................. 500 V
Notes:
(1) Derate linearly 8.57 mW/o C above TA = 25o C.
Sche matic
Prod uct Bul le tin JANTX, JANTXV, 2N6987U
Sep tem ber 1996
Sur face Mount Quad PNP Tran sis tor
Type JANTX, JANTXV, 2N6987U
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-18
Type JANTX, JANTXV, 2N6987U
Elec tri cal Char ac ter ics (TA = 25o C un less oth er wise noted)
SYMBOL PA RAME TER MIN MAX UNITS TEST CON DI TIONS
Off Char ac ter is tics
V(BR)CBO Collector-Base Breakdown Voltage 60 VIC = 10 mA
V(BR)CEO Collector-Emitter Breakdown Voltage 60 VIC = 10 mA(2)
V(BR)EBO Emitter-Base Breakdown Voltage 5VIE = 10 µA
ICBO1 Collector-Base Cutoff Current 10 nA VCB = 50 V
ICBO2 Collector-Base Cutoff Current 10 µAVCB = 50 V, TA = 150o C
IEBO Emitter-Base Cutoff Current 50 nA VEB = 3.5 V
On Char ac ter is tics
hFE1 Forward Current Transfer Ratio 75 VCE = 10 V, IC = 0.1 mA
hFE2 Forward Current Transfer Ratio 100 450 VCE = 10 V, IC = 1.0 mA
hFE3 Forward Current Transfer Ratio 100 VCE = 10 V, IC = 10 mA(2)
hFE4 Forward Current Transfer Ratio 100 300 VCE = 10 V, IC = 150 mA(2)
hFE5 Forward Current Transfer Ratio 50 VCE = 10 V, IC = 500 mA(2)
hFE6 Forward Current Transfer Ratio 50 VCE = 10 V, IC = 1 mA, TA = -55o C(2)
VCE(SAT)1 Collector-Emitter Saturation Voltage 0.4 VIC = 150 mA, IB = 15 mA(2)
VCE(SAT)2 Collector-Emitter Saturation Voltage 1.6 VIC = 500 mA, IB = 50 mA(2)
VBE(SAT)1 Base-Emitter Saturation Voltage 1.3 VIC = 150 mA, IB = 15 mA(2)
VBE(SAT)2 Base-Emitter Saturation Voltage 2.6 VIC = 500 mA, IB = 50 mA(2)
Small- Signal Char ac ter is tics
hfeMagnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio 2 8 VCE = 20 V, IC = 50 mA, f = 100 MHz
hfe Small-Signal Short Circuit Forward
Current Transfer Ratio 100 VCE = 10 V, IC = 1 mA, f = 1 kHz
Cobo Open Circuit Output Capacitance 8pF VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cibo Input Capacitance 30 pF VEB = 2 V, IC = 0, 100 kHz ≤ f ≤ 1 MHz
Switchcing Char ac ter is tics
ton Turn-On Time 45 ns VCC = 30 V, IC = 150 mA, IB = 15 mA
toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
Tran sis tor to Tran sis tor Iso la tion
Rt-t Isolation Resistance 10k MΩVt-t = 500 V
(2) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-19
