GMF05C
Document Number 85833
Rev. 1.1, 02-Mar-05
Vishay Semiconductors
www.vishay.com
1
18538-2
VY - V = Vishay
Y = year, is variable for digit from 0 to 9
(e.g. 4 = 2004, 5 = 2005)
CW = Calendar Week, is variable for number from 01 to 52
GM1 = code for GMF05C
CW
VY
GM1
1
1
654
23
ESD Protection Diode Array
Features
• Transient protection for data lines as per
IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV
(contact), IEC 61000 - 4 - 5 (Lightning)
12 A (tp = 8/20 µs)
• Small package for use in portable electronics
• Bidirectional protection of 4 I/O lines
• Unidirectional protection of 5 I/O lines
• Low leakage current
• Ideal for cellular handsets, cordless phones, note-
books, handhelds and digital cameras
Mechanical Data
Case: SOT-363 Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 6.0 mg
Parts Table
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Part Ordering code Marking Remarks
GMF05C GMF05C-GS08 GM1 Tape and Reel
Parameter Test condition Symbol Value Unit
Peak pulse power 8/20 µs waveform Pppm 200 W
Peak pulse current 8/20 µs waveform Ipp 12 A
Parameter Test condition Symbol Value Unit
Operating temperature Tj- 55 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
e3
www.vishay.com
2Document Number 85833
Rev. 1.1, 02-Mar-05
VISHAY
GMF05C
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Reverse stand-off voltage VRWM 5V
Reverse breakdown voltage It = 1 mA VBR 6V
Reverse leakage current VRWM = 5 V IR1µA
Clamping voltage IPP = 1 A, 8/20 µs wavef orm VC9.5 V
IPP = 12 A, 8/20 µs waveform VC12.5 V
Peak forward voltage IF = 1 A, 8/20 µs waveform VF1.5 V
Junction capacitance between I/
O pins and Gnd VR = 0 V, f = 1 MHz Cj150 pF
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
Figure 2. Pulse Derating Curve
P
PPM
- Peak Pulse Power (kW)
0.1
1
10
0.1 1.0 10
td - Pulse Duration (µs)
100 1000
0.01
ggmf05c-hs3_01
0
25
50
75
100
07525 50 100 125 150 175
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
T
A
- Ambient T
emperature (°C)
ggmf05c-hs3_02
Figure 3. Pulse Waveform
Figure 4. Clamping Voltage vs. Peak Pulse Current
0
50
100
90
80
70
60
40
30
20
10
110
I
PPM
- Peak Pulse Current, % I
RSM
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
0105 15 20 30
25
t-Time ( µs)
td=IPP
2
ggmf05c-hs3_03
I
PP
- Peak Pulse Current (A)
0
10
20
18
16
14
12
8
6
4
2
V
C
- Clamping Voltage (V)
042 68 14
10 12
ggmf05c-hs3_04
VISHAY
GMF05C
Document Number 85833
Rev. 1.1, 02-Mar-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
1.60 (0.063)
1.30 (0.052) Ref.
0.65 (0.026) Ref.
0.35 (0.014)
0.90 (0.035)
14280
0.80 (0.031)
1.00 (0.039)
10
0.10 (0.004)
0.10 (0.004)
0.25 (0.010)
1.80 (0.071)
2.20 (0.087)
2.00 (0.079)
2.20 (0.087)
1.15 (0.045)
1.35 (0.053)
0.20 (0.009)
0.30 (0.012)
0.65 (0.026)
1.3 (0.052)
I
S
O
M
e
t
h
o
d
E
MountingPad Layout
www.vishay.com
4Document Number 85833
Rev. 1.1, 02-Mar-05
VISHAY
GMF05C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
