ZXMP6A17DN8
PROVISIONAL ISSUE A - SEPTEMBER 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -60 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 AV
DS=-60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -0.8 V ID=-250A, VDS=V
GS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.125
0.190 ⍀
⍀
VGS=-10V, ID=-2.2A
VGS=-4.5V, ID=-1.8A
Forward Transconductance (1)(3) gfs 4.9 S VDS=-15V,ID=-2.2A
DYNAMIC (3)
Input Capacitance Ciss 670 pF VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance Coss 46.7 pF
Reverse Transfer Capacitance Crss 28.0 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.9 ns
VDD =-30V, ID=-1A
RG
@
6.0Ω,V
GS=-10V
Rise Time tr22.4 ns
Turn-Off Delay Time td(off) 20.0 ns
Fall Time tf16.0 ns
Gate Charge Qg7.3 nC VDS=-30V,VGS=-5V,
ID=-2.2A
Total Gate Charge Qg15.1 nC VDS=-30V,VGS=-10V,
ID=-2.2A
Gate-Source Charge Qgs 1.8 nC
Gate-Drain Charge Qgd 1.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25°C, IS=-2A,
VGS=0V
Reverse Recovery Time (3) trr 26.4 ns TJ=25°C, IF=-1.7A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 32.7 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.