13
VTB Process Photodiodes
VTB PROCESS
BLUE ENHANCED, ULTRA HIGH DARK RESISTANCE
FEATURES
• E nhanced UV to IR spec tral range
• Integral IR rejection filters a vailable
• R espons e @ 220 nm , 0.0 6 A/W, ty pi cal with UV window
• R esponse @ 365 nm, 0. 14 A/ W typ ical
• High open circuit voltage @ low light levels
• 1 to 2% linearity ov er 7 to 9 decades
• Very low dark current & high shunt resistance
PRODUCT DESCRIPTION
This series of P on N silicon planar photodiodes have been
designed to maximize their response through the visible part of
the spectrum. Those units with UV transmitting windows also
exhibit excellent response in the UV region and are
charact eri zed at 220 nm .
“B ” series d evices have a bui lt -i n i nfr a r e d r e j ecti on filter for t ho se
applications where a detector is needed that approximates the
human eye. Typical transmission of wavelengths greater than
750 nm is less than 3% when measured with an incandescent
source operating at 2850 K.
Diodes made with the VTB process are primarily intended for
use in the photovoltaic mode but may be used with a small
reverse bias. All photodiodes in this series exhibit very high
shunt resistance. This characteristic leads to very low offsets
when the diodes are used in high gain transimpedance op-amp
circuits.
TYPICA L CHARACTERISTI C C URVES @ 25°C (UNLESS OTHERWISE NOTED)
Absolute Spectral Response Absolute Spectral Response “B” Series (Filtered)
