2N7002DW
OptiMOS Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Parameter 1) Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.30 A
TA=70 °C 0.24
Pulsed drain current ID,pulse TA=25 °C 1.2
Avalanche energy, single pulse EAS ID=0.3 A, RGS=25 Ω1.3 mJ
Reverse diode dv/dtdv/dtID=0.3 A, VDS=48 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD class JESD22-A114 (HBM) class 0 (<250V)
Power dissipation Ptot TA=25 °C 0.5 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) Remark: one of both transistors in operation.
Value
PG-SOT363
VDS 60 V
RDS(on),max VGS=10 V 3 Ω
VGS=4.5 V 4
ID0.3 A
Product Summary
1
23
4
5
6
Type Package Tape and Reel Information Marking HalogenFree Packing
2N7002DW PG-SOT363 H6327: 3000 pcs/reel X8s Yes Non Dry
Rev.2.2 page 1 2011-06-16
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2N7002DW
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint2) RthJA - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID=250 µA 60 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250 µA 1.5 2.1 2.5
Drain-source leakage current ID (off) VDS=60 V, VGS=-10 V,
Tj=25 °C - - 0.1 µA
VDS=60 V,
VGS=0 V, Tj=150 °C --5
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.25 A - 2.0 4 Ω
VGS=10 V, ID=0.5 A - 1.6 3
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.24 A 0.2 0.36 - S
Values
2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
long.
Rev.2.2 page 2 2011-06-16
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2N7002DW
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -1320pF
Output capacitance Coss - 4.1 6
Reverse transfer capacitance Crss - 2.0 3
Turn-on delay time td(on) - 3.0 4.5 ns
Rise time tr- 3.3 5
Turn-off delay time td(off) - 5.5 9
Fall time tf- 3.1 5
Gate Charge Characteristics
Gate to source charge Qgs - 0.05 0.1 nC
Gate to drain charge Qgd - 0.2 0.4
Gate charge total Qg- 0.4 0.6
Gate plateau voltage Vplateau - 4.0 - V
Reverse Diode
Diode continous forward current IS- - 0.3 A
Diode pulse current IS,pulse - - 1.2
Diode forward voltage VSD VGS=0 V, IF=0.5 A,
Tj=25 °C - 0.96 1.2 V
Reverse recovery time trr - 8.5 13 ns
Reverse recovery charge Qrr - 2.4 4 nC
VR=30 V, IF=0.5 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=0.5 A, RG=6 Ω
VDD=48 V, ID=0.5 A,
VGS=0 to 10 V
Rev.2.2 page 3 2011-06-16
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2N7002DW
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
101
100
10-1
10-2
10-3
1 10 100
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
103
102
101
100
10-1
10-2
10-3
10-4
10-5
103
102
101
100
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0.5
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0 40 80 120 160
TA [°C]
ID [A]
Rev.2.2 page 4 2011-06-16
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2N7002DW
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5
ID [A]
RDS(on) [Ω]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VGS [V]
ID [A]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00 0.10 0.20 0.30 0.40
ID [A]
gfs [S]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VDS [V]
ID [A]
Rev.2.2 page 5 2011-06-16
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2N7002DW
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.3 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=250 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [Ω]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-60 -20 20 60 100 140
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
101
100
0102030
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6
VSD [V]
IF [A]
Rev.2.2 page 6 2011-06-16
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2N7002DW
13Avalanche characteristics 14 Typ. gate charge
IAS =f(tAV ); RGS =25VGS=f(Qgate); ID=0.5 A pulsed
parameter: TJ(start) parameter: VDD
15 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
50
55
60
65
70
-40 0 40 80 120 160
Tj [°C]
VBR(DSS) [V]
12 V
30 V
48 V
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5
Qgate [nC]
VGS [V]
25 °C
100 °C
125 °C
103
102
101
100
100
10-1
10-2
10-3
tAV [µs]
IAV [A]
Rev.2.2 page 7 2011-06-16
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2N7002DW
SOT363
Package Outline:
Footprint: Packing:
Rev.2.2 page 8 2011-06-16
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2N7002DW
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Rev.2.2 page 9 2011-06-16
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