I1I
REVERSE BLOCKING TRiODE THYRISTOR
. . . multi-purpose PNPN silicon controlled rectifiers suited for, indus-
trial, consumer, and muiitarv applications. Offered in achoice of
space-saving, economical packages formounting versatility.
@Uniform Low-Level Noise-1 mmune Gate Triggering –
IGT =10 mA (Tvp) @Tc =25°C
eLOW Forward “On” Voltage –
UT =1.0 V(Tv P) @5,0 Amp @25°C
eHigh Surge-Current Capability –,>~~
ITSM =100 Amp Peak ,,.,.
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.Shorted Emitter Construction ,1~:-
,,,*\,:t’,* “
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-~.;t‘*,,
VGM 10 volts
TJ -40 to +100 Oc
*Storage Temperature Range T~ta -40 to +150 Oc
Stud Torque II15 Iin. lb.
rHERMAL CHARACTERISTICS
Characteristic ISymbol ITyp IMax Unit
Thermal Resistance, Junction to Case R6JC 1,5 2.5* Oclw
Thermal Resistance, Case to Ambient R6CA Oclw
(See Fig. 11) 2N4183-98 50 –
(1) Ratings apply for zero or negative gate voltage. Devices should not be test~ for blocking
capability in amanner such that the voltage applied exceeds the rated block ing voltage.
(2) Devices should not be operated with apositive bias applied to the gate concurrently
with anegative potential appliad to the anode.
“Indicates JEDEC Register4 Data
m
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A– 11.10 -0,437
c181 -0,310
.
F1,78 TYP 0,070 TYP
G2.23 2.79 0.090 0.110
J10.72 11.48 0.422 0,452
K- 16.76 -0660
L- 1549 -Q,61O
NOTE:
I. D[MG’MEA SUREO ATCAN.
2N4167–74
CASE 86~1
NOTES:
n
1, DIM. G“ MEASURED AT CAN.
2, LEAD NO. 3i7,5° DISPLACEMENT.
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STYLE 1: —
PIN 1. GATE
2. CATHODE
3. ANODE A1+
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CASE 87L;g
‘MOTOROLA INC., 197a DS 66M
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LECTRICAL CHARACTERISTICS (Tc =25°C unless”othewise “ot~) ~
,,, Characteristic Symbol ~i” Typ Wx Unit
‘Peak Forward Blocking Current IDRM
(VD =Rated VDRM ?TJ =,1 OO°C, gate open) .:mA
——2.0
●
Peak Reverse “Blocking Current IRRM
(VR =Rated VRRM @TJ =100°C, gate open) mA
——2.0
Gate Trigger Current (Continuous dc) (1) IGT
(VD’= 7.0 Vdc, RL= 100 Q) mA
10 30 ,:!$,.
*(VD =7.0 Vdc, RL= 100 Q,Tc= -40°C) ,— .,.~.f:,:,!,?~).~~
——60 ,,*X! $ik.!
Gate Trigger Voltage (Continuous dc) VGT .,,.,
,, qqr~$ ~~
(VD= 7.0 Vdc, RL= 100~) —0.75 1.5 ,,>$>:<:!’’”
*(VD =7.0 Vdc, RL =100 Q, TC =-40°C) >~
,_
*(VD =7.0 Vdc, RL,= 100 Q,TJ =100°C) —25 f~,$$$ ‘
0.2 –‘“ “<3*~~’”o
‘—.~?i,:,,f,,..+
‘Forward “on” Voltage (pulsed, 1.0 ms max, duty cycle< 1%) ,*1,,,,t:,,.
{<.,%,$::.4~
(iT& =15.7 A) VTM ~,.,t
..:*i\, ‘f: volts
—1.4 ,& ‘%$@
Holding Current IH ,$k ;’
,.{~.}$,$,
(VD =7.0 Vdc, gate open) ..> :,:%*:P mA
., -,~..:,.
—,.$t”’1$0 .q~. 30
“(VD =7,0 Vdc, gate open, TC =-40°C) **::....>‘
—:,W*.->-” 60
Turn-On Time (td +tr) ‘on ,.6?,$:;$.>~,>.
–‘*;; “’”*1 .0 —Us
.(IG =20mAdc, IF =5.0Adc, VD =Rated VDRM), “..<,%k,,‘$::’
,JT ~,.!
Turn-Off Time ‘“ “j+::t:.s,,..?.,
,(IF =5. OAdc, lR’=5.0Adc) toff ;*>. ~~....*\.~
..1+.!.~.i,il
., ~;!.~ps
‘$}:.—15 –
(IF =5.0 Adc, IR =5.0 Adc, TJ =100°C, VD =Rated VDRM) ..:..,%..::;
..i$~’ JJl.,.,!~~
...
~~.$,$i,t —25 –
(dv/dt =30 v/Ps) ~~i~,:\
,,,$*: ~’.,!*
.:;/’$’$.=,
,1..
......,,,,., ‘~~1+,
Forward Voltage Application’ Rate (Exponential) ,,. ..:;>
<h, z,, ,;[dv/dt
$!
(Gate open, TJ.= 100°C, VD =Rated VDRM} Vlps
..:,,,>*...\.\ —
,’r\]f.,~.t:.}*~:. 5Q –
,, ‘$?7
IFor optimum opera? ion, i.e. faster turn-on, lower switching losses, bsti dl/dt capability, recommended IGT =200 mA minimum.
“Indicates JEDEC Registered Data ,,** C*‘,
.,.,\++,
,< .):+
s+.. *+.
,,,
cuRRENT DERATING
FIGURE 3 – MAXIMUM CASE TEMPERATURE FIGURE 4 – MAXIMUM AMBIENT
TEMPERATURE
IT(AV), AVERAGE FORWAROCURRENT(AMP)
~.:$,?.,
,:;$’ \:
FIGURE 5 – POWER DISSIPATION
+?401 ! , ,
1 1 I1 1 1 1 I1, , I
~0.1
2
>0,05
50.03
N0.02 0.05 0.1 0.2 0.5 1.0 2,0
IIII1111 , , I ,
II [ I 1111 , ,
I
I I I I [Ill I I I I 1111 I I
,I I , t 1 1 \
5.0 10 20 50 100 200 m
500 1000 2000
t, TIME (ins)
qMOTOROLA semiconductor Products Inc. -
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:ESliT~NCE OF tiL-ATEs :~J&u~E’”$l -CASE:TO-AMEIENT THERMAL RESISTANCE
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&TYPICAL TERMINAL
STRIP OR PRINTED
-1 .4? ~ ~ ~’1 I I 1’ CIRCUIT BOAROMOUNTING JI
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