DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 2SK3224-Z TO-252 designed for high current switching applications. FEATURES * Low on-state resistance RDS(on)1 = 40 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 m MAX. (VGS = 4.0 V, ID = 10 A) * Low Ciss : Ciss = 790 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-251) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) 20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, -10 V ID(DC) 20 A ID(pulse) 70 A Total Power Dissipation (TC = 25C) PT 25 W Total Power Dissipation (TA = 25C) PT 1.0 W Channel Temperature Tch 150 C Tstg -55 to +150 C IAS 10 A EAS 10 mJ Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13797EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1999, 2001 2SK3224 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V | yfs | VDS = 10 V, ID = 10 A 8.0 15 RDS(on)1 VGS = 10 V, ID = 10 A 24 40 m RDS(on)2 VGS = 4.0 V, ID = 10 A 33 60 m Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 790 pF Output Capacitance Coss VGS = 0 V 240 pF Reverse Transfer Capacitance Crss f = 1 MHz 100 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 10 A 19 ns tr VGS = 10 V 165 ns td(off) RG = 10 62 ns 71 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 48 V 20 nC Gate to Source Charge QGS VGS = 10 V 3 nC Gate to Drain Charge QGD ID = 20 A 6.5 nC VF(S-D) IF = 20 A, VGS = 0 V 0.93 V Reverse Recovery Time trr If = 20 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 45 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL RG RG = 10 PG. VDD 90% VGS Wave Form 0 10% VDD ID 90% 90% BVDSS IAS ID VGS 0 ID VDS ID VDD Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 0 10% 10% Wave Form RL VDD Data Sheet D13797EJ2V0DS td(on) tr ton td(off) tf toff 2SK3224 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 35 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 0 20 40 TC - Case Temperature - C 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 n) o S( 10 d ite ) Lim10 V = S PW ID(pulse) =1 0 s 10 0 RD t V G ID(DC) (a s 1m 10 DC s ms 1 TC = 25C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A 1000 Rth(ch-A) = 125C/W 100 10 Rth(ch-C) = 5.0C/W 1 0.1 0.01 0.001 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13797EJ2V0DS 3 2SK3224 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed TA = -50C 25C 75C 150C 1 0 2 4 RDS(on) - Drain to Source On-State Resistance - m 40 VGS = 4.0 V 0 2 3 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed TA = 150C 75C 25C -50C 1 VDS = 10 V Pulsed 10 1 100 50 40 ID = 10 A 30 20 10 0 0 Pulsed 70 60 50 VGS = 4.0 V VGS = 10 V 20 10 1 10 10 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 80 30 5 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.1 1 0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A 4 60 VDS - Drain to Source Voltage - V 10 40 VGS = 10 V VGS - Gate to Source Voltage - V 100 0.1 0.1 80 20 Pulsed VDS = 10 V 6 8 RDS(on) - Drain to Source On-State Resistance - m 0.1 | yfs | - Forward Transfer Admittance - S ID - Drain Current - A 10 100 VGS(off) - Gate to Source Cut-off Voltage - V ID - Drain Current - A 100 VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 -50 0 50 100 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet D13797EJ2V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 90 80 ISD - Diode Forward Current - A 70 60 VGS = 4.0 V 50 40 VGS = 10 V 30 20 10 0 Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 ID = 10 A -50 0 50 100 0.1 0 150 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss Coss 100 10 0.1 Crss 1 10 100 VDD = 30 V VGS = 10 V RG = 10 tr tf 100 td(off) td(on) 10 1 0.1 1 REVERSE RECOVERY TIME vs. DRAIN CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/s VGS = 0 V 10 1 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 100 1 0.1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 100 14 60 VGS VDD = 48 V 30 V 12 V 12 10 8 40 6 4 20 2 VDS 0 0 IF - Drain Current - A 10 ID = 20 A 20 30 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 2SK3224 0 40 QG - Gate Charge - nC Data Sheet D13797EJ2V0DS 5 2SK3224 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 10 A 10 EAS =1 0m J 1 RG = 25 VDD = 30 V VGS = 20 0 V Starting Tch = 25C 0.1 10 100 1m L - Inductive Load - H 6 Energy Derating Factor - % | IAS | - Single Avalanche Current - A 100 10 m VDD = 30 V RG = 25 VGS = 20 0 V IAS 10 A 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C Data Sheet D13797EJ2V0DS 2SK3224 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1.10.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 3 +0.2 2.30.2 1.0 MIN. 1.8 TYP. 0.50.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 1 1.5-0.1 +0.2 0.8 4.3 MAX. 1.10.2 13.7 MIN. 3 7.0 MAX. 2 5.50.2 1.60.2 1 4 5.50.2 10.0 MAX. 6.50.2 5.00.2 0.50.1 4 2.0 MIN. 5.00.2 2.30.2 1.5-0.1 6.50.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13797EJ2V0DS 7 2SK3224 * The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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