AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary * Bottom Source Technology * Very Low RDS(ON) * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Applications Q1 Q2 VDS 30V 30V ID (at VGS=10V) 55A 85A RDS(ON) (at VGS=10V) < 5m < 1.4m RDS(ON) (at VGS=4.5V) < 8m < 1.8m 100% UIS Tested 100% Rg Tested * DC/DC Converters in Computing, Servers, and POL * Non-Isolated DC/DC Converters in Telecom and Industrial DFN 5X6E D2/S1 G2 8 G1 1 PIN1 S1/D2 2 S2 D1 G1 S1/D2 D1 Q1 S2 Q2 3 7 1 G1 G2 8 G2 D2/S1 D2/S1 7 2 S1/D2 6 D2/S1 D2/S1 6 3 D1 5 D2/S1 5 4 D1 S2 D1 D1 D1 4 D1 PIN Bottom View Top View Bottom View Top View D2/S1 Orderable Part Number Package Type Form Minimum Order Quantity AOE6932 DFN 5x6E Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage TA=25C 12 V 55 85 L=0.01mH VDS Spike 10s TC=25C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1. 30 IAS 60 80 A EAS 18 32 mJ V PDSM TA=70C t 10s Steady-State Steady-State A 38 PD TA=25C 85 340 21 VSPIKE TC=100C 35 120 16 IDSM TA=70C Avalanche energy Rev.2.0 : July 2016 20 IDM Avalanche Current C Power Dissipation A Units V ID TC=100C Pulsed Drain Current C Power Dissipation B Max Q2 30 VGS TC=25C Continuous Drain Current G Continuous Drain Current Max Q1 30 36 36 24 52 9.6 20 3.5 3.5 2.2 2.2 A W W TJ, TSTG -55 to 150 C Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 25 25 35 35 50 50 65 65 4 1.8 5.2 2.4 Units C/W C/W C/W RJA RJC www.aosmd.com Page 1 of 10 Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C 5 1.3 VGS=10V, ID=20A 100 nA 2.2 V 3.5 5 5 7 8 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 5.2 gFS Forward Transconductance VDS=5V, ID=20A 57 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz m m S 1 V 30 A 1150 pF 380 pF 55 pF 1.2 2.0 SWITCHING PARAMETERS Total Gate Charge Qg(10V) 16 25 nC Qg(4.5V) Total Gate Charge 7.5 15 Qgs Gate Source Charge Qgd Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s VGS=10V, VDS=15V, ID=20A 0.6 A 1.7 RDS(ON) TJ=125C Units V VDS=30V, VGS=0V IDSS Max nC 2.5 nC Gate Drain Charge 3.0 nC Gate Source Charge 2.5 nC 3.0 nC Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 6.5 ns 4.5 ns 19 ns 3 ns 11.5 ns nC 20 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0 : July 2016 www.aosmd.com Page 2 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 4.5V 3.5V 10V 60 ID (A) ID (A) 60 VDS=5V 40 40 125C 3V 20 25C 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 1.6 7 6 Normalized On-Resistance VGS=4.5V 5 RDS(ON) (m) 2 4 3 VGS=10V 2 1 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 1.0E+01 ID=20A 1.0E+00 1.0E-01 IS (A) RDS(ON) (m) 15 10 125C 125C 1.0E-02 25C 1.0E-03 5 1.0E-04 25C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0 : July 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=20A Ciss Capacitance (pF) VGS (Volts) 8 6 4 1000 Coss 500 Crss 2 0 0 0 5 10 15 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 400 TJ(Max)=150C TC=25C 10s 100.0 300 10.0 100s 1ms 10ms 1.0 0.0 0.01 200 DC TJ(Max)=150C TC=25C 0.1 Power (W) 10s RDS(ON) limited ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=5.2C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : July 2016 www.aosmd.com Page 4 of 10 30 60 25 50 20 40 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 5 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=65C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : July 2016 www.aosmd.com Page 5 of 10 Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250A, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=12V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C 5 1.2 VGS=10V, ID=20A 100 nA 1.9 V 0.9 1.4 1.45 2.2 1.8 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 1.15 gFS Forward Transconductance VDS=5V, ID=20A 200 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz m S 1 V 60 A 4180 pF 880 pF 125 pF 1.3 2.2 65 100 nC Qg(4.5V) Total Gate Charge 30 50 Qgs Gate Source Charge Qgd Gate Drain Charge Gate Source Charge VGS=10V, VDS=15V, ID=20A VGS=4.5V, VDS=15V, ID=20A 0.6 m SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs f=1MHz A 1.5 RDS(ON) TJ=125C Units V VDS=30V, VGS=0V IDSS Max nC 7 nC 9.5 nC 7 nC 9 ns Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/s Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 42 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75, RGEN=3 nC 9.5 8 ns 50.5 ns 8.5 ns 17 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0 : July 2016 www.aosmd.com Page 6 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3V 80 4.5V 60 10V 60 2.5V ID (A) ID (A) VDS=5V 80 40 125C 40 20 20 25C VGS=2V 0 0 0 1 2 3 4 1 5 2 4 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 1.8 Normalized On-Resistance 2.0 1.5 RDS(ON) (m) 3 VGS=4.5V 1.0 VGS=10V 0.5 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0.0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 1.0E+01 ID=20A 1.0E+00 1.0E-01 2 IS (A) RDS(ON) (m) 3 125C 125C 1.0E-02 25C 1.0E-03 1 1.0E-04 25C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0 : July 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 2000 Coss 1000 0 Crss 0 0 20 40 60 80 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 100.0 10 10s 10s RDS(ON) limited TJ(Max)=150C TC=25C 400 1ms 10ms 1.0 DC TJ(Max)=150C TC=25C 0.1 0.0 0.01 Power (W) ID (Amps) 100s 10.0 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=2.4C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : July 2016 www.aosmd.com Page 8 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 Power Dissipation (W) 50 80 Current rating ID (A) 40 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=65C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : July 2016 www.aosmd.com Page 9 of 10 Figure A: Gate Charge Circuit & Waveforms Gate Charge Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit && Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped Unclamped Inductive Inductive Switching Switching (UIS) (UIS)Test TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Diode Recovery Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0 : July 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10