AOE6932
General Description Product Summary
Q1 Q2
V
DS
30V 30V
I
D
(at V
GS
=10V) 55A 85A
R
DS(ON)
(at V
GS
=10V) < 5mΩ < 1.4mΩ
R
DS(ON)
(at V
GS
=4.5V) < 8mΩ < 1.8mΩ
Applications
100% UIS Tested
100% Rg Tested
Orderable Part Number Package Type Form Minimum Order Quantity
30V Dual Asymmetric N-Channel MOSFET
• Bottom Source Technology
• Very Low R
DS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
AOE6932 DFN 5x6E Tape & Reel 3000
• DC/DC Converters in Computing, Servers, and POL
• Non-Isolated DC/DC Converters in Telecom and Industrial
DFN 5X6E
Top View Bottom View Top View Bottom View
G1
S1/D2
D1
S2
G2
D2/S1
PIN
PIN1
D1
D2/S1
G2 G1
D2/S1
D2/S1
D1
S2
S1/D2
D1
D1
1
2
3
45
6
7
8
G2
D2/S1
D2/S1
D2/S1
S2
S1/D2
G1
D1
D1
1
2
3
45
6
7
8
D1
Q1 Q2
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.01mH
C
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol Typ Q1 Typ Q2 Max Q1 Max Q2
t ≤ 10s
25 25 35 35
Steady-State
50 50 65 65
Steady-State
R
θ
JC
4 1.8 5.2 2.4
Note: Bottom S2, D1.
Maximum Junction-to-Case
(Note)
°C/W
mJ
340
38
30
±12
85
85
16
60
24
35
120
21
A
A
18
36 36
2.2
3.5
32
9.6 20
T
A
=70°C
T
C
=25°C
T
C
=100°C
Avalanche Current
C
Continuous Drain
Current
Absolute Maximum Ratings T
A
V
Units
30
80
°C/W
Maximum Junction-to-Ambient
A D
V
A
2.2
3.5
Maximum Junction-to-Ambient
A
°C/W
R
θJA
Thermal Characteristics
Parameter
T
A
=70°C
W
I
D
V
I
DSM
52
T
C
=25°C
T
A
=25°C
Continuous Drain
Current
G
Power Dissipation
B
T
C
=100°C
10µs
P
D
Max Q1
°C
Units
Junction and Storage Temperature Range -55 to 150
P
DSM
W
T
A
=25°C
Power Dissipation
A
±20
55
Max Q2
30
Parameter
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
C
Rev.2.0 : July 2016
www.aosmd.com Page 1 of 10
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.3 1.7 2.2 V
3.5 5
T
J
=125°C 5 7
5.2 8 mΩ
g
FS
57 S
V
SD
0.7 1 V
I
S
30 A
C
iss
1150 pF
C
oss
380 pF
C
rss
55 pF
R
g
0.6 1.2 2.0 Ω
Q
g
(10V)
16 25 nC
Q
g
(4.5V)
7.5 15 nC
Q
gs
2.5 nC
Q
gd
3.0 nC
Q
gs
2.5 nC
Q
gd
3.0 nC
t
D(on)
6.5 ns
t
r
4.5
ns
mΩ
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
R
DS(ON)
Static Drain-Source On-Resistance
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
Gate Source Charge
Gate Drain Charge V
GS
=4.5V, V
DS
=15V, I
D
=20A
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
Turn-On Rise Time
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
t
r
4.5
ns
t
D(off)
19 ns
t
f
3 ns
t
rr
11.5 ns
Q
rr
20 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.2.0 : July 2016 www.aosmd.com Page 2 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
012345
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
5
6
7
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2.5V
3.5V
4.5V
10V
3V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
5
10
15
20
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.2.0 : July 2016 www.aosmd.com Page 3 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Coss
Crss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=5.2°C/W
Rev.2.0 : July 2016 www.aosmd.com Page 4 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Current rating ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
Rev.2.0 : July 2016 www.aosmd.com Page 5 of 10
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.2 1.5 1.9 V
0.9 1.4
T
J
=125°C 1.45 2.2
1.15 1.8 mΩ
g
FS
200 S
V
SD
0.7 1 V
I
S
60 A
C
iss
4180 pF
C
oss
880 pF
C
rss
125 pF
R
g
0.6 1.3 2.2 Ω
Q
g
(10V)
65 100 nC
Q
g
(4.5V)
30 50 nC
Q
gs
9.5 nC
Q
gd
7 nC
Q
gs
9.5 nC
Q
gd
7 nC
t
D(on)
9 ns
t
r
8
ns
Gate Source Charge
Gate Drain Charge V
GS
=4.5V, V
DS
=15V, I
D
=20A
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
Turn-On Rise Time
Gate resistance f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage I
S
=1A,V
GS
=0V
Gate-Body leakage current V
DS
=0V, V
GS
=±12V
V
DS
=V
GS,
I
D
=250µA
V
GS
=4.5V, I
D
=20A
Forward Transconductance V
DS
=5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
I
DSS
Zero Gate Voltage Drain Current µA
mΩ
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
t
r
8
ns
t
D(off)
50.5 ns
t
f
8.5 ns
t
rr
17 ns
Q
rr
42 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.2.0 : July 2016 www.aosmd.com Page 6 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
1234
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
0.0
0.5
1.0
1.5
2.0
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2V
4.5V
10V 2.5V
3V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
1
2
3
4
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.2.0 : July 2016 www.aosmd.com Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 20 40 60 80
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=2.4°C/W
T
on
T
P
DM
Rev.2.0 : July 2016 www.aosmd.com Page 8 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
20
40
60
80
100
0 25 50 75 100 125 150
Current rating ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
T
on
T
P
DM
Rev.2.0 : July 2016 www.aosmd.com Page 9 of 10
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.2.0 : July 2016 www.aosmd.com Page 10 of 10