=hr= SEME LAB IRF130 MECHANICAL DATA Dimensions in mm (inches) NCHANNEL 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 16.64 (0.655) 4.09 (0.161) 3.84 (0.151) dia. 2 ples. FEATURES PACKAGE 20.32 (0.800) fr eace | SIMPLE DRIVE REQUIREMENTS dia. AcgG : gS 1.09 (0.043) es 0.97 (0.038) > 53g dia. as 2 ples. rn, Anes TO-3 Metal Package Pin 1 Gate Pin 2 Source Case Drain 17.15 (0.675) Voss lp(cont) Rpsion) POWER MOSFET 100V 14A 0.18Q * HERMETICALLY SEALED TO-3 METAL | | | 38 - SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (T,,5. = 25C unless otherwise stated) Ves Gate Source Voltage +20V Ip Continuous Drain Current (Ves =0, Tease = 25C) 14A Ip Continuous Drain Current (Vag =9, Tease = 100C) 9A lou Pulsed Drain Current 1 56A Pp Power Dissipation @ Toase = 25C 75W Linear Derating Factor 0.6W/C Eas Single Pulse Avalanche Energy 2 75mJ lAR Avalanche Current 2 14A Ear Repetitive Avalanche Energy 2 7.5mdJ dv/dt Peak Diode Recovery 3 5.5V/ns Ty, Tstg Operating and Storage Temperature Range -55 to +150C Ty Lead Temperature 1.6mm (0.63) from case for 10 sec. 300C Notes 1) Pulse Test: Pulse Width < 300us, 6 < 2% 2) @ Vpp = 50V , L2=570uH , Re = 25Q , Peak |, = 14A, Starting Ty = 25C 3) @ Isp < 14A, di/dt < 140A/Us , Vpp < BVpgs. Ty < 150C , Suggested Reg = 7.52 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96=r= SEME LAB IRF130 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. | Typ. | Max. | Unit STATIC ELECTRICAL RATINGS BVpsg Drain Source Breakdown Voltage | Veg =0 Ip = 1mA 100 Vv ABVpss Temperature Coefficient of Reference to 25C 0.13 vic AT; Breakdown Voltage Ip = 1mA Static Drain Source OnState Veg = 10V Ip =9A 0.18 RDston) Resistance 1 Veg = 10V Ip = 14A oat | Gs D Vesithy Gate Threshold Voltage Vos = Vas Ip = 250mA 2 4 Dts Forward Transconductance 1 Vps 2 15V Ips = 9A 4.6 S (0) Ipss Zero Gate Voltage Drain Current Vas = 9 ns vee = uA less Forward Gate Source Leakage Veg = 20V 100 nA less Reverse Gate Source Leakage Veg = -20V 100 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Veg =0 650 Coss Output Capacitance Vps = 25V 250 pF Criss Reverse Transfer Capacitance f = 1MHz 44 Qg Total Gate Charge Veg = 10V 12 35 Qgs Gate Source Charge Ip = 14A 2.5 10 nc Qga Gate Drain (Miller) Charge Vps = 0.5BVpss 5.0 15 tavon) Turn-On Delay Time Vp = 50V 35 t Rise Time 80 : Ip = 14A ns taor) TurnOff Delay Time R.=7.50 60 ty Fall Time on 45 SOURCE DRAIN DIODE CHARACTERISTICS Is Continuous Source Current 14 A Ism Pulse Source Current 2 56 ; Ig =14A Ty = 25C Vsp Diode Forward Voltage 1 1.5 V Veg = 0 ter Reverse Recovery Time Ip = 14A Ty = 25C 300 ns Qr Reverse Recovery Charge 1 dj/d,< 100A/us Vpp < 50V 3.0 uc ton Forward TurnOn Time Negligible PACKAGE CHARACTERISTICS Lp Internal Drain Inductance (measured from 6mm down drain lead to centre of die) 5.0 nH Ls Internal Source Inductance (from 6mm down source lead to source bond pad) 13 THERMAL CHARACTERISTICS Rejc Thermal Resistance Junction Case 1.67 Recs Thermal Resistance Case Sink 0.12 C/W Roya Thermal Resistance Junction Ambient 30 Notes 1) Pulse Test: Pulse Width < 300ms, 6< 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96