: PD 9.1641 International IREO5O5 TGR Rectitier PRELIMINARY HEXFET Power MOSFET e Advanced Process Technology D e Dynamic dv/dt Rating Voss = 250V e 150C Operating Temperature e Fast Switching _ e Fully Avalanche Rated Roston) = 0.1250 Description lp = 20A Fifth Generation HEXFETs from International Rectifier _ s uulize advanced processing techniques to achieve extremely low on-resistance per silicon area. This Cenefit, combined with the fast switching speed and Tuggedized device design that HEXFET Power MOSFETs are well known for. provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for ail commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the TO-220A8 industry. Absolute Maximum Ratings Parameter Max. Units ln @ Te = 25C Continuous Drain Current. Veg @ 10V 20 lyn @ Te = 100C | Continuous Drain Current. Veg @ 10V 13 A ion Pulsed Drain Current 80 Pp @Tc = 25C Power Dissipation 125 Ww : Linear Oerating Factor 1.0 wre iVes Gate-to-Source Voltage + 20 Vv Eas Single Pulse Avalanche Energy 420 mJ lan Avalanche Current 12 A Ear Repettive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt @ 3.2 Vins iTy Operating Junction and -55 to+ 150 'Tstg Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 Ibfein (1.1Nem) Thermal Resistance : Parameter Typ. Max. Units Rasc Junction-to-Case 1.0 Recs Case-to-Sink, Flat, Greased Surface 0.50 _ C/W Rasa Junction-to-Ambient 62 Me 4855452 0026299 SOT 3/18/97IRF2525 International TOR Rectifier Electrical Characteristics @ T, = 25C (unless otherwise specified) : Parameter | Min. | Typ. | Max. | Units Conditions Vierioss Drain-to-Source Breakdown Voltage 250 | -: | V Ves = OV, Ip = 250uUA AVeeryoss/47. : Breakdown Voltage Temp. Coefficient | | 0.37| ; VC | Reference to 25C, Ip = IMA Roston) Static Drain-to-Source On-Resistance | | i 0.125 Q | Veg = 10V, ip = 12A Vesith) Gate Threshoid Voltage 1 2s !401 V_ | Vos=Vas. Ip = 250A Os Forwara Transconductance { 15 {|ij S | Vos=50V,lp=12A loss ' Drain-to-Source Leakage Current 1 25 pA Vos = 250V, Vas = OV i |} 250! Vos = 200V, Veg = OV. Ty = 125C less i Gate-to-Source Forward Leakage | 100 | nA Ves = 20V Gate-to-Source Reverse Leakage | /-100 | Ves = -20V Qg Total Gate Charge i | i 190 | Ip = 12A Qgs Gate-to-Source Charge > |{-+ 20 | nC | Vos = 200V Qga Gate-to-Drain ("Miller") Charge it: 92 | Ves = 10V, See Fig. 6 and 13 taion) - Turn-On Delay Time im] ti2};: Vop = 125V ty Rise Time j]) 14): Ip = 12A tooth Tum-Off Delay Time ; Teri " | Rg=250 t : Fall Time { 20 | | Rp = 102. See Fig. 10 @ i . Between lead, > Lp Intemai Drain Inductance |) 45) a er (0.25in.) (E rom package ls | Intemal Source Inductance | 75) and center of die contact 3 Ciss : Input Capacitance |2400| Ves = OV Coss ' Output Capacitance - | 360/: pF | Vos=25V Ciss Reverse Transfer Capacitance | 170| i f = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter | Min.| Typ.| Max. | Units| Conditions Is Continuous Source Current __|__! 29 i MOSFET symbol . (Body Diode} | A showing the Isw , Pulsed Source Current integral reverse s ! (Body Diode) |} 8 p-n junction diode. s Vso Diode Forward Voltage t}! 15 Vs} T; = 25C, Ig = 12A, Vag = OV tee : Reverse Recovery Time j; 3401 500 | ns | T; =25C, ip = 12A Qe : Reverse RecoveryCharge | 35] 5.3 | pC | difdt= 100A/is ton ' Forward Turn-On Time Intrinsic tum-on tme is negigible (tum-on is dominated by Ls+Lp) Notes: Repetitive rating; pulse width limited by max, junction temperature. ( See fig. 11) Starting T, = 25C. L = 5.8mH Re = 250. Jag = 12A. (See Figure 12) Isp s 12A, di/dt s 260A/uUs, Voo < Visrioss, Ty 150C Pulse width < 300us; duty cycle < 2%. M 46S5545e2 0026300 OS),Internaiona! TOR Rectifier GS 15V OV 3.0V 7.0V 6.0V 3.5V 5.0V BOTTOM 4.5V | | | 20us PULSE WIDTH Ty= 25C 1 10 100 Vos. Drain-to-Source Voltage (V) Ip, Drain-to-Source Current (A) Fig 1. Typicai Output Characteristics 8 Ty = 150C Ty = 25C Ip. Drain-to-Source Current (A) VpS=50V \ 20us PULSE WIDTH 4.0 45 5.0 5.5 6.0 6.5 7.0 Veg. Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics IRF2525 5.0V BOTTOM 4.5V Ip, Drain-to-Source Current (A) 20us PULSE WIDTH Ty= 150C 1 10 100 Vos. Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 3.0 2.5 (Normalized) fr wm Q Drain-to-Source On Resistance o 0.5 Rpsvon) Vag=10V 60 40 -20 0 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) 0.0 Fig 4. Normalized On-Resistance Vs. Temperature Me 4855452 0026301 198IRF2525 =200 Ves =0V. f= 1MHz Ciss = Cas + Cog . Cus SHORTED rss = \sd 2900 = Cus + 2200 2200 C, Capacitance (pF) Vos. Drain-to-Source Voitage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ;Ty= 150C 4 Isp. Reverse Drain Current (A) Veg =0V 0.4 0.6 0.8 1.0 1.2 Vsgp .Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage mm 4855452 OOe2b30c Internatiocal TOR kectit'er Vas. Gate-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 40 30 120 160 200 Qq. Tota! Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 RATION IN Is AREA LIM 8 Ip, Drain Current (A) 3 To = 25C T) = 150C NI10ms 11 1 10 100 1000 Vos. Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 724internar.cnal TOR Recrer Ip. Drain Current (A) Thermal Response (Z thc ) 20 S| | oN 15 ps | i i i 10 JP PEN 1 25 50 75 100 +25 +50 Tc, Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.1 SINGLE RESPONSE} Ty 0.01 0.00001 0.0001 2.001 IRF2525 Pulse Width < i ys Duty Factor $0.1 % IH Fig 10a. Switching Time Test Circuit Vos ,_ ->_ 90% \ fo 10% Ve NR 1 ere of tajon) ty es tam t Fig 10b. Switching Time Waveforms Notes: 1. OutyfactorD= t1/to 2. Peak T y=P om x Zinc + Tc 2.01 0.1 1 t,, Rectanguiar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case WM 44655452 0026303 860 aIRF2525 @ 8 a 8 8 Eas , Single Pulse Avalanche Energy (mJ) ViBR)DSS lag - = Fig 12b. Unciamped Inductive Waveforms 10V - Ogg - Ong - Vg Fig 13a. Basic Gate Charge Waveform Mmm 4855452 0026304 1000 tu Q Oo International ID TOP 5.4A 7.6A BOTTOM 12A ' Oo 25 50 75 100 125 150 Starting Tj, Juncton Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Reguiator + 7 Vos Ves Ig *F Ip Current Sampling Aesistors Fig 13b. Gate Charge Test Circuit TT?nternatiorc! > IRF2525 IO@R Rectit'er Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations , * Low Stray Inductance . Ground Plane e Low Leakage Inductance Current Transformer panne Lawl AAT. WA +} Re 4 * dv/dt controtled by Rg + * Driver same type as 0.U.T. T. Voo lem controlled by Duty Factor D" e D.U.T. - Device Under Test river Gate Drive Period = EW. -}p w__- ! ~ Period t Vege l0V * S$ : Dlous lop Waveform Reverse Recovery | Body Diode Forward Current +* Current di/dt / @ D.U.T. Veg Waveform Diode Recovery / dvidt NS "DD Re-Applied j- OY _____{, Voltage Body Diode Forward Drop @ |inductor Curent Gee Ripple < 5% 'so " Vag = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ME 4assusa 0026305 433 myIRF2525 International Tor Rectitier Package Outline TO-220AB Outline Dimenscns are shown in millimeters (inches) ae ALAS 37at 149) Tee feu 9 1388) 62 (109) : -A- 42001 12 ha 6, 3 me ioe pees oo eae fl 15 24 4.600) =_, i 1484 1.844) . Fame tent 2 OND LEAD ASSIGNMENTS oa 4 aN t-GATE [oo 3 -souRce Se ey : qf 4-ORAIN 14090555) . : i | 13 47: $30) i _ $6 01651 il | List lace 4 : rd You i ee 3 Pe cog i gy, 9-55 4.0221 ay 1401058) a 0 46 (.018) y45(04s) 7 By 035 sa WLBT A Guy {ob apis) TE 2 ga (104) S286400) ee ax NOTES: t DIMENSIONING & TOLERANC:NS PER ANS. 714 5M 1982. 3 OUTLINE CONFORMS TO JEDES OUTLINE TO-223AB. 2 CONTROLLING OIMENSION NCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUOE BURRS. Part Marking Information TO-220AB8 EXAMPLE: THIS 1S AN IRF1010 WITH ASSEMBLY 5 rN LOT CODE 9B1M INTERNATIONAL \/ | PART NUMBER RECTIFIER \ are LOGO 'TER 9246: 77 BM DATE CODE ASSEMBLY ' ie (YYW W) LOT CODE ili | YY = YEAR | ' | WW = WEEK UI TeR Rectifier WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victona Park Ave., Suite 201, Markham, Ontario LR 228, Tel: (905) 475 1897 IR} GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49. 10071 Borgaro, Torino Tel: ++ 39 11 451 0114 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-lkebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/97 ME 4855452 0026306 S77 a cevii