BZX55B Series
Zener diode
Features
Vz-tolerance ±2%
Applications
Voltage stabilization
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation I=4mm TL≤25℃ P
V 500 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 175 ℃
Storage temperature range Tstg -65~+175 ℃
Maximum Thermal Resistance
Tj=25℃
Parameter Test Conditions Symbol Value Unit
Junction ambient I=4mm TL=constant RthJA 350 K/W
Electrical Characteristics
Tj=25℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1.5 V
BZX55B Series
Type VZnom IZT for V
ZT and rzjT rzjK at I
ZK IR and IR at VR TKVZ
BZX55B V mA V1) Ω Ω mA μA μA2) V %/K
2V4 2.4 5 2.35~2.45 <85 <600 1 <50 <100 1 -0.09~-0.06
2V7 2.7 5 2.64~2.76 <85 <600 1 <10 <50 1 -0.09~-0.06
3V0 3.0 5 2.94~3.06 <85 <600 1 <4 <40 1 -0.08~-0.05
3V3 3.3 5 3.24~3.36 <85 <600 1 <2 <40 1 -0.08~-0.05
3V6 3.6 5 3.52~3.68 <85 <600 1 <2 <40 1 -0.08~-0.05
3V9 3.9 5 3.82~3.98 <85 <600 1 <2 <40 1 -0.08~-0.05
4V3 4.3 5 4.22~4.38 <75 <600 1 <1 <20 1 -0.06~-0.03
4V7 4.7 5 4.6~4.8 <60 <600 1 <0.5 <10 1 -0.05~+0.02
5V1 5.1 5 5.0~5.2 <35 <550 1 <0.1 <2 1 -0.02~+0.02
5V6 5.6 5 5.48~5.72 <25 <450 1 <0.1 <2 1 -0.05~+0.05
6V2 6.2 5 6.08~6.32 <10 <200 1 <0.1 <2 2 0.03~0.06
6V8 6.8 5 6.66~6.94 <8 <150 1 <0.1 <2 3 0.03~0.07
7V5 7.5 5 7.35~7.65 <7 <50 1 <0.1 <2 5 0.03~0.07
8V2 8.2 5 8.04~8.36 <7 <50 1 <0.1 <2 6.2 0.03~0.08
9V1 9.1 5 8.92~9.28 <10 <50 1 <0.1 <2 6.8 0.03~0.09
10 10 5 9.8~10.2 <15 <70 1 <0.1 <2 7.5 0.03~0.1
11 11 5 10.78~11.22 <20 <70 1 <0.1 <2 8.2 0.03~0.11
12 12 5 11.76~12.24 <20 <90 1 <0.1 <2 9.1 0.03~0.11
13 13 5 12.74~13.26 <26 <110 1 <0.1 <2 10 0.03~0.11
15 15 5 14.7~15.3 <30 <110 1 <0.1 <2 11 0.03~0.11
16 16 5 15.7~16.3 <40 <170 1 <0.1 <2 12 0.03~0.11
18 18 5 17.64~18.36 <50 <170 1 <0.1 <2 13 0.03~0.11
20 20 5 19.6~20.4 <55 <220 1 <0.1 <2 15 0.03~0.11
22 22 5 21.55~22.45 <55 <220 1 <0.1 <2 16 0.04~0.12
24 24 5 23.5~24.5 <80 <220 1 <0.1 <2 18 0.04~0.12
27 27 5 26.4~27.6 <80 <220 1 <0.1 <2 20 0.04~0.12
30 30 5 29.4~30.6 <80 <220 1 <0.1 <2 22 0.04~0.12
33 33 5 32.4~33.6 <80 <220 1 <0.1 <2 24 0.04~0.12
36 36 5 35.3~36.7 <80 <220 1 <0.1 <2 27 0.04~0.12
39 39 2.5 38.2~39.8 <90 <500 0.5 <0.1 <5 30 0.04~0.12
43 43 2.5 42.1~43.9 <90 <600 0.5 <0.1 <5 33 0.04~0.12
47 47 2.5 46.1~47.9 <110 <700 0.5 <0.1 <5 36 0.04~0.12
51 51 2.5 50~52 <125 <700 0.5 <0.1 <10 39 0.04~0.12
56 56 2.5 54.9~57.1 <135 <1000 0.5 <0.1 <10 43 0.04~0.12
62 62 2.5 60.8~63.2 <150 <1000 0.5 <0.1 <10 47 0.04~0.12
68 68 2.5 66.6~69.4 <200 <1000 0.5 <0.1 <10 51 0.04~0.12
75 75 2.5 73.5~76.5 <250 <1500 0.5 <0.1 <10 56 0.04~0.12
1) Tighter tolerances available request:
BZX55A… ±1% of VZnom
BZX55C… ±5% of VZnom
2) at Tj=150℃
BZX55B Series
Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Thermal Resistance vs. Lead length Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 2. Total Power Dissipation vs. Ambient
Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 3. Typical Change of Working Voltage under
Operating Conditions at Tamb=25℃
Figure 6. Diode Capacitance vs. Z-voltage
BZX55B Series
Figure 7. Forward Current vs. Forward Voltage Figure 9. Z-Current vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage Figure 10. Differential Z-Resistance Vz vs. Z-Voltage
Figure 11. Thermal Response
BZX55B Series
Dimensions in mm
Type No. 3)
Cathode identification
φ2.0 max.
φ0.55 max.
4.2 max. 26 min. 26 min.
Cathode Anode
B
5
5
Z
5
V
X
B
1
Standard Glass Case
JEDEC DO 35
3) Type No.
BZX55 B 5V1
① ② ③
① Series name
② Tighter tolerances available request:
A ------±1% of VZnom
B ------±2% of VZnom
C ------±5% of VZnom
③ Zener Voltage (VZnom), for example:
5V1 ------ 5.1V
12 ------ 12V
