ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES * Extremely low equivalent on-resistance; RSAT = 32mV at 5A SOT89 * 4.3 amps continuous current * Up to 15 amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 amps APPLICATIONS * Emergency lighting circuits * Motor driving (including DC fans) * Solenoid, relay and actuator drivers * DC-DC modules * Backlight inverters * Power switches PINOUT * MOSFET gate drivers ORDERING INFORMATION DEVICE ZXTP2012ZTA REEL SIZE TAPE WIDTH QUANTITY PER REEL 7" 12mm embossed 1,000 units TOP VIEW DEVICE MARKING 951 ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTP2012Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -100 V Collector-emitter voltage BV CEO -60 V Emitter-base voltage Continuous collector current (a) -7 V IC -4.3 A Peak pulse current Power dissipation at T A =25C (a) I CM -15 A PD 1.5 W Linear derating factor Power dissipation at T A =25C (b) Linear derating factor 12 mW/C PD 2.1 W 16.8 mW/C Operating and storage temperature range T j , T stg -55 to +150 C BV EBO THERMAL RESISTANCE PARAMETER SYMBOL (a) Junction to ambient (b) Junction to ambient VALUE UNIT R JA 83 C/W R JA 60 C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTP2012Z CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTP2012Z ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -100 -120 Collector-emitter breakdown voltage BV CER -100 -120 V I C =-1A, RB1k Collector-emitter breakdown voltage BV CEO -60 -80 V I C =-10mA* Emitter-base breakdown voltage BV EBO -7 -8.1 Collector cut-off current I CBO Collector cut-off current 1 1 I CER R 1k MAX. UNIT CONDITIONS V I C =-100A V I E =-100A -20 nA V CB =-80V -0.5 A VCB=-80V,Tamb=100C -20 nA V CB =-80V -0.5 A VCB=-80V,Tamb=100C Emitter cut-off current I EBO 1 -10 nA V EB =-6V Collector-emitter saturation voltage V CE(SAT) -14 -20 mV -50 -65 mV I C =-0.1A, I B =-10mA* IC=-1A, IB=-100mA* -75 -110 mV IC=-2A, IB=-200mA* -160 -215 mV IC=-5A, IB=-500mA* Base-emitter saturation voltage V BE(SAT) -950 -1050 mV I C =-5A, I B =-500mA* Base-emitter turn-on voltage V BE(ON) -840 -950 mV I C =-5A, V CE =-1V* Static forward current transfer ratio H FE 100 250 100 200 45 90 IC=-5A, VCE=-1V* 10 25 IC=-10A, VCE=-1V* 120 I C =-10mA, V CE =-1V* IC=-2A, VCE=-1V* 300 MHz IC =-100mA, VCE =-10V Transition frequency fT Output capacitance C OBO 48 pF V CB =-10V, f=1MHz* Switching times t ON 39 ns t OFF 370 I C =-1A, V CC =-10V, I B1 =I B2 =-100mA f=50MHz * Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 4 ZXTP2012Z TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS ZXTP2012Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 c 0.28 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 SEMICONDUCTORS 6