1
SEMICONDUCTORS
SUMMARY
BVCEO = -60V : RSAT = 32m ; IC= -4.3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
•Extremely low equivalent on-resistance; RSAT = 32mV at 5A
•4.3 amps continuous current
•Up to 15 amps peak current
•Very low saturation voltages
•Excellent gain characteristics specified up to 10 amps
APPLICATIONS
•Emergency lighting circuits
•Motor driving (including DC fans)
•Solenoid, relay and actuator drivers
•DC-DC modules
•Backlight inverters
•Power switches
•MOSFET gate drivers
DEVICE MARKING
951
ZXTP2012Z
ISSUE 1 - JUNE 2005
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY PER
REEL
ZXTP2012ZTA 7” 12mm
embossed 1,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT89
ZXTP2012Z
SEMICONDUCTORS
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PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R⍜JA 83 °C/W
Junction to ambient (b) R⍜JA 60 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO -100 V
Collector-emitter voltage BVCEO -60 V
Emitter-base voltage BVEBO -7 V
Continuous collector current (a) IC-4.3 A
Peak pulse current ICM -15 A
Power dissipation at TA=25°C (a)
Linear derating factor PD1.5
12 W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD2.1
16.8 W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO -100 -120 V IC=-100␮A
Collector-emitter breakdown voltage BVCER -100 -120 V IC=-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BVCEO -60 -80 V IC=-10mA*
Emitter-base breakdown voltage BVEBO -7 -8.1 V IE=-100␮A
Collector cut-off current ICBO ⬍1 -20
-0.5 nA
␮AVCB=-80V
VCB=-80V,Tamb=100⬚C
Collector cut-off current ICER
Rⱕ1k⍀
⬍1 -20
-0.5 nA
␮AVCB=-80V
VCB=-80V,Tamb=100⬚C
Emitter cut-off current IEBO ⬍1 -10 nA VEB=-6V
Collector-emitter saturation voltage VCE(SAT) -14
-50
-75
-160
-20
-65
-110
-215
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
Base-emitter saturation voltage VBE(SAT) -950 -1050 mV IC=-5A, IB=-500mA*
Base-emitter turn-on voltage VBE(ON) -840 -950 mV IC=-5A, VCE=-1V*
Static forward current transfer ratio HFE 100
100
45
10
250
200
90
25
300 IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition frequency fT120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance COBO 48 pF VCB=-10V, f=1MHz*
Switching times tON
tOFF
39
370 ns IC=-1A, VCC=-10V,
IB1=IB2=-100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ISSUE 1 - JUNE 2005
Europe
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Zetex Semiconductors plc
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Telephone (44) 161 622 4444
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hq@zetex.com
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© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILS
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059
b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167
b1 - 0.53 - 0.021 E1 - 2.60 - 0.102
b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118
c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112
D 4.40 4.60 0.173 0.181 - ----
PACKAGE DIMENSIONS