FHX35X GaAs FET & HEMT Chips FEATURES * * * * Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg 0.25m, Wg = 280m Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Source Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Symbol Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature VDS VGS Pt* Tstg Tch Channel Temperature Unit Rating 4.0 -3.0 290 -65 to +175 V V mW C 175 C *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 3 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000. 3. The operating channel temperature (Tch) should not exceed 80C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 2V, VGS = 0V 15 40 85 mA Transconductance gm VDS = 2V, IDS = 10mA 40 60 - mS Pinch-off Voltage Vp VDS = 2V, IDS = 1mA -0.2 -1.0 -2.0 V VGSO IGS = -10A -3.0 - - V NF - 1.2 1.6 dB 8.5 10.0 - dB - 155 200 C/W Gate Source Breakdown Voltage Associated Gain Gas VDS = 3V IDS = 10mA f = 12GHz Thermal Resistance Rth Channel to Case Noise Figure FHX35X Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.2 July 1999 1 FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 50 VGS =0V 300 Drain Current (mA) Total Power Dissipation (W) 350 250 200 150 100 50 0 50 100 150 40 20 10 0 200 Ambient Temperature (C) 9 8 NF 7 1 f=12GHz VDS=3V Output Power (dBm) 10 2 6 0 10 20 30 20 39 57 78 92 109 124 139 153 165 177 0.40 0.50 0.68 0.86 1.03 1.20 1.38 1.54 1.70 1.88 2.05 0.67 0.56 0.46 0.37 0.29 0.22 0.17 0.13 0.10 0.08 0.07 10 IDS=15mA 5 -5 0 5 Input Power (dBm) VDS=3V IDS=10mA 15 Ga (max) ) 0.81 0.77 0.74 0.71 0.69 0.67 0.65 0.64 0.63 0.62 0.62 Rn/50 ( 2 4 6 8 10 12 14 16 18 20 22 NFmin (dB) IDS=30mA 10 Ga (max) & |S21|2 vs. FREQUENCY FHX35X NOISE PARAMETERS VDS=3V, IDS=10mA opt (MAG) (ANG) 15 0 -10 Drain Current (mA) Freq. (GHz) -0.6V -0.8V -1.0V 1 2 3 4 Drain-Source Voltage (V) 20 Gas Associated Gain (dB) Noise Figure (dB) 11 f=12GHz VDS=3V -0.4V OUTPUT POWER vs. INPUT POWER NF & Gas vs. IDS 3 -0.2V 30 10 |S21|2 5 0 4 6 8 1012 20 Frequency (GHz) 2 FHX35X GaAs FET & HEMT Chips S11 S22 +j50 S21 S12 +90 +j100 +j25 22 20 15 5 +j250 10 +j10 15 5 1 10 22 20 25 50 0.1 GHZ 180 0.04 0.08 0.12 0.1 GHZ 0.1 GHZ 15 20 -j250 15 5 10 -j25 0.16 SCALE FOR |S12| 1 10 22 -j10 0.1 GHZ 100 SCALE FOR |S21| 0 1 10 20 22 -j100 2 3 4 5 -90 -j50 S11 S-PARAMETERS VDS = 3V, IDS = 10mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG S22 100 1.000 -1.3 4.235 178.9 0.002 89.4 0.506 -0.7 500 0.998 -6.7 4.227 174.7 0.009 86.8 0.505 -3.3 1000 0.993 -13.3 4.200 169.2 0.017 83.6 0.503 -6.7 2000 0.973 -26.3 4.097 159.2 0.033 77.5 0.493 -13.1 3000 0.943 -38.8 3.941 149.4 0.048 71.9 0.478 -19.2 4000 0.907 -50.6 3.752 140.3 0.060 67.0 0.460 -24.8 5000 0.869 -61.8 3.546 131.8 0.071 62.8 0.441 -29.9 6000 0.831 -72.2 3.337 123.9 0.080 59.4 0.422 -34.6 7000 0.795 -81.9 3.134 116.7 0.087 56.7 0.403 -38.8 8000 0.763 -91.0 2.943 110.1 0.093 54.6 0.386 -42.8 MAG ANG 9000 0.734 -99.5 2.766 103.9 0.097 53.2 0.371 -46.5 10000 0.709 -107.5 2.604 98.2 0.102 52.3 0.357 -50.1 11000 0.688 -115.0 2.457 92.8 0.105 51.8 0.344 -53.6 12000 0.670 -122.0 2.323 87.8 0.109 51.8 0.333 -57.1 13000 0.655 -128.7 2.202 83.1 0.112 52.2 0.323 -60.7 14000 0.644 -135.0 2.093 78.6 0.116 52.8 0.314 -64.3 15000 0.634 -141.0 1.993 74.3 0.119 53.7 0.306 -68.0 16000 0.627 -146.7 1.903 70.2 0.124 54.7 0.300 -71.8 17000 0.622 -152.1 1.820 66.3 0.128 55.8 0.294 -75.8 18000 0.619 -157.3 1.744 62.6 0.134 56.9 0.289 -80.0 19000 0.618 -162.2 1.675 59.0 0.140 58.0 0.285 -84.3 20000 0.617 -167.0 1.610 55.5 0.146 59.0 0.282 -88.8 21000 0.618 -171.5 1.551 52.1 0.154 59.9 0.280 -93.5 22000 0.621 -175.8 1.495 48.8 0.162 60.6 0.279 -98.3 NOTE:* The data includes bonding wires. n: number of wires Gate n=2 (0.3mm length, 20m Dia Au wire) Drain n=2 (0.3mm length, 20m Dia Au wire) Source n=4 (0.3mm length, 20m Dia Au wire) 3 Download S-Parameters, click here 0 FHX35X GaAs FET & HEMT Chips CHIP OUTLINE 60 90 90 (Unit: m) Gate 160 Gate 75 37020 Drain Source 70 50 Die Thickness: 10020m 100 45020 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4