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Edition 1.2
July 1999
FHX35X
GaAs FET & HEMT Chips
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS 15 40 85
40 60 -
-0.2 -1.0 -2.0
-3.0 --
8.5 10.0 -
-1.2 1.6
VDS = 2V, IDS = 1mA
VDS = 2V, IDS = 10mA
VDS = 2V, VGS = 0V
IGS = -10µA
VDS = 3V
IDS = 10mA
f = 12GHz
mA
mS
V
dB
dB
V
gm
FHX35X
Vp
VGSO
NF
Gas
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
Channel to Case - 155 200 °C/W
Thermal Resistance Rth
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
4.0
-3.0
290
-65 to +175
175
V
V
mW
°C
°C
Pt*
Tstg
Tch
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 3 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Gate Gate
Drain
Source
FEATURES
• Low Noise Figure: 1.2dB (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg ≤0.25µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
DESCRIPTION
The FHX35X is a High Electron Mobility Transistor(HEMT) intended
for general purpose, low noise and high gain amplifiers in the
2-18GHz frequency range. This device is well suited for
telecommunication, DBS, TVRO, VSAT or other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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FHX35X
GaAs FET & HEMT Chips
NF & Gas vs. IDS
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
OUTPUT POWER vs. INPUT POWER
FHX35X NOISE PARAMETERS
VDS=3V, IDS=10mA
3f=12GHz
VDS=3V
Freq.
(GHz)
Γopt
(MAG) (ANG)
NFmin
(dB) Rn/50
f=12GHz
VDS=3V
Gas
NF
2
1
0
11
10
9
8
7
6
10 20 30
-10 10-5 0 5
1234
Drain Current (mA) Input Power (dBm)
Drain-Source Voltage (V)
Noise Figure (dB)
40
50
30
20
0
10
10
15
20
5
0
Drain Current (mA)
Output Power (dBm)
Associated Gain (dB)
2
4
6
8
10
12
14
16
18
20
22
0.81
0.77
0.74
0.71
0.69
0.67
0.65
0.64
0.63
0.62
0.62
20
39
57
78
92
109
124
139
153
165
177
0.40
0.50
0.68
0.86
1.03
1.20
1.38
1.54
1.70
1.88
2.05
0.67
0.56
0.46
0.37
0.29
0.22
0.17
0.13
0.10
0.08
0.07
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
-1.0V
IDS=15mA
IDS=30mA
POWER DERATING CURVE
50 100 150 200
Ambient Temperature (°C)
350
300
250
200
150
100
0
50
Total Power Dissipation (W)
Ga (max) & |S21|2 vs. FREQUENCY
VDS=3V
IDS=10mA
Ga (max)
|S21|2
15
10
5
04681012 20
Frequency (GHz)
()
3
FHX35X
GaAs FET & HEMT Chips
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
SCALE FOR |S21|
SCALE FOR |S12|
0.160.04 0.08 0.12
2
1
3
4
0.1 GHZ
0.1 GHZ 0.1 GHZ 0.1 GHZ
10 5
15
15
10
10
15
10
15
1
1
22
22
20
20
5
5
22
20
22
20
5
10010 25 50Ω
S-PARAMETERS
VDS = 3V, IDS = 10mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
100 1.000 -1.3 4.235 178.9 0.002 89.4 0.506 -0.7
500 0.998 -6.7 4.227 174.7 0.009 86.8 0.505 -3.3
1000 0.993 -13.3 4.200 169.2 0.017 83.6 0.503 -6.7
2000 0.973 -26.3 4.097 159.2 0.033 77.5 0.493 -13.1
3000 0.943 -38.8 3.941 149.4 0.048 71.9 0.478 -19.2
4000 0.907 -50.6 3.752 140.3 0.060 67.0 0.460 -24.8
5000 0.869 -61.8 3.546 131.8 0.071 62.8 0.441 -29.9
6000 0.831 -72.2 3.337 123.9 0.080 59.4 0.422 -34.6
7000 0.795 -81.9 3.134 116.7 0.087 56.7 0.403 -38.8
8000 0.763 -91.0 2.943 110.1 0.093 54.6 0.386 -42.8
9000 0.734 -99.5 2.766 103.9 0.097 53.2 0.371 -46.5
10000 0.709 -107.5 2.604 98.2 0.102 52.3 0.357 -50.1
11000 0.688 -115.0 2.457 92.8 0.105 51.8 0.344 -53.6
12000 0.670 -122.0 2.323 87.8 0.109 51.8 0.333 -57.1
13000 0.655 -128.7 2.202 83.1 0.112 52.2 0.323 -60.7
14000 0.644 -135.0 2.093 78.6 0.116 52.8 0.314 -64.3
15000 0.634 -141.0 1.993 74.3 0.119 53.7 0.306 -68.0
16000 0.627 -146.7 1.903 70.2 0.124 54.7 0.300 -71.8
17000 0.622 -152.1 1.820 66.3 0.128 55.8 0.294 -75.8
18000 0.619 -157.3 1.744 62.6 0.134 56.9 0.289 -80.0
19000 0.618 -162.2 1.675 59.0 0.140 58.0 0.285 -84.3
20000 0.617 -167.0 1.610 55.5 0.146 59.0 0.282 -88.8
21000 0.618 -171.5 1.551 52.1 0.154 59.9 0.280 -93.5
22000 0.621 -175.8 1.495 48.8 0.162 60.6 0.279 -98.3
NOTE:* The data includes bonding wires.
n: number of wires Gate n=2 (0.3mm length, 20µm Dia Au wire)
Drain n=2 (0.3mm length, 20µm Dia Au wire)
Source n=4 (0.3mm length, 20µm Dia Au wire)
Download S-Parameters, click here
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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CHIP OUTLINE
Gate Gate
Drain
Source
(Unit: µm)
90
70 100
450±20
160
370±20
75
90
60
50
Die Thickness:
100±20µm
FHX35X
GaAs FET & HEMT Chips