SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,39 2N2209 2SA458t SFT 107 SFT307 2N123/5t 2G603t 94M 65Tt 10.M m UST761 10.M = |2.5m m 26344 12M8 |2.3m ASz10t 12MA |5.0m 2N2627 13MSA\ 1.8m SFT128 14M [2.5m 2N2628 15MA/ 1.8m 2N2626 16M8A/ 1.8m m 2SA127 25.M UST764 25M |2.5m m 2N934 33M5A|2.5m XA161 40.M |2.5m 28A412t 60.Ms [2.5m m 2N2588 75M5A|2.0m T1397 90.M (2.5m 2G 106t 120M |2.0m 2N2942t 150MA\2.0m 150M8A/2.0m 200M 2.5m m 200M |2.5m m T1395 200M |2.5m 2G104t 300M |4.0m 2S5A405t 300M5 2N846Bt 320MA/2.0m 101Mt 320M8 |2.0m TI711A 360M8 |2.0m 107M 375M (2.0m 207M 375M |2.0m m 2N2928 400M54/2.0m 2N960/46t 460M5 |2.0m D.A.T.A. 200 | 24 4.06 | 1 6.0% | 10mg 6.09 |1. 1.0m 6.00 |1.0md 1.0md 12D} 1.0mo 308 SYMBOLS AND CODES IN ORDER OF MAX COLLECTOR DISSIPATION Cob |STRUCIY200 |E O TURE EXPLAINED IN INTERPRETER s/a_ |AD T0200/D E TOS R107 RO1 TO1 TO5 TO5 TO5 TO9 R51 39b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)118 TYPE No. 2N2943 2N1675 D29A10 2N2942 FK3503 BSW92 2N3400 2S5C868 BFY16 2N5242 40451 BCW60A BCW6OD BCW61C 2N706/51 BSY33 2N1962 2N1963 2SC841H BSX97 MM3724 TIStt4 2N5735 TE3905 2N706B/46 2N753/5 1 40222 A3T2907 FT3644 BSS25 BC214LA NS949 2SC479H NS2100 BSW89 BSX81B D.A.T.A. 120MA 120MSA 140M8A 150M8A 150MSA 1BOMSA 1SOMSA 150M8 150M 170MA 175M 180M5 180M5 180M 200M5A 200M5A 200M8A 200M5A 200M8A 200M5A 200M&A 200M5A 200MA 200M8A 200MSA 200MA 200M84 200M5A 200M8A 200M&8A 200M5A 200M8A 200M8A 200M8 200M8A 200MSA DELAY| STORE| FALL TIME | TIME | TIME td ts tf 20n 140n 30n n n 5.0ud 70n 25n 100n@ 200nt 50nt 200n 60n 120n 30n 300n 1.0uf 65n 30n n 75n n 80nt 80nt 80nt 16nt 30nd 40nD 20not 200ndt 50nd n 25n 25n IN FREE AIR @ 25C m 150m 100 m 330m 150m 350m 300mt 150m 200m 600m 500m 1.0 150m* * 150m* * 150m* * 300m 100m 400m 400m 500m 230m* * 300m m MAX. | Cob r'bb Veb hFE SAT. Xx RES. Cob 50 5.0 6.0 |1. 35 25g 36 1.0 @ |. 100 t#A 12 200+ {1.0 5.0 @ |2.0me |170 25 5.0 D |2.0md |500 25 5.0 B |2.0mZ 350 25 10 20 TA | 60 2.0 D Z| 55 1.0 @ 1.0 @ 1.0 @ 10 2.0 2.0 10% {1 10 40 109 750 10Q | 50 754 * SYMBOLS AND CODES EXPLAINED IN INTERPRETER IN ORDER. OF (1) fab, (2) MAX RISE TIME & STRUCTURE) M|MAX. |Y200 P-PNP N-NPN T Ge EO A|TEMP| s/a AD DE T0200 Tog TO032 TO98 TO9 u ui17b R110 TOS c X20e B TO5 @ TO1OS | A R119 uS6a u uS6a u56a TO51 u18 u TO46 TO46 TO18 TOS X55 A TO122 |P TO106 IA TO46 TOS1 TO52 u u44 u47a R124c ub6a TO92 u TO46 TOS TO18 X73 MMt1 118