4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–9986
Optocoupler with Phototransistor Output
Description
The 4N25(G)V/ 4N35(G)V series consists of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14827
654
231
C
E
A (+) C (–) n.c.
95 10805
B
Order Instruction
Ordering Code CTR Ranking Remarks
4N25V/ 4N25GV1) >20%
4N35V/ 4N35GV1) >100%
1) G = Leadform 10.16 mm; G is not market on the body
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99 87
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D
Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
D
Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D
Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR5 V
Forward current IF60 mA
Forward surge current tp ≤ 10
m
s IFSM 3 A
Power dissipation Tamb ≤ 25°C PV100 mW
Junction temperature Tj125 °C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 32 V
Emitter collector voltage VCEO 7 V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 25°C PV150 mW
Junction temperature Tj125 °C
Coupler Parameter Test Conditions Symbol Value Unit
Isolation test voltage (RMS) t = 1 min VIO 3.75 kV
Total power dissipation Tamb ≤ 25°C Ptot 250 mW
Ambient temperature range Tamb –55 to +100 °C
Storage temperature range Tstg –55 to +125 °C
Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–9988
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA
Tamb = 100°CVF1.2 1.4 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100
m
A VECO 7 V
Collector emitter cut-off
current VCE = 10 V, IF = 0,
Tamb = 100°CICEO 50 nA
VCE = 30 V, IF = 0,
Tamb = 100°CICEO 500
m
A
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage IF = 50 mA, IC = 2 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100
W
fc110 kHz
Coupling capacitance f = 1 MHz Ck1 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IFVCE = 10 V, IF = 10 mA 4N25(G)V CTR 0.20 1
C F
CE F
4N35(G)V CTR 1.00 1.5
VCE = 10 V, IF = 10 mA,
Tamb = 100°C4N35(G)V CTR 0.40
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99 89
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25°C Psi 265 mW
Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6kV
Safety temperature Tsi 150
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage –
Routine test 100%, ttest = 1 s Vpd 1.6 kV
Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM 6kV
gg
Lot test (sample test)
Tr test
(see figure 2) Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012
W
VIO = 500 V,
Tamb = 100°CRIO 1011
W
VIO = 500 V,
Tamb = 150°C
(construction test only)
RIO 109
W
0 25 50 75 125
0
50
100
150
200
300
P – Total Power Dissipation ( mW )
tot
Tsi – Safety Temperature ( °C )
150
94 9182
100
250 Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
VIOTM
VPd
VIOWM
VIORM
V
t4
t3ttest
tstres
t2
t1
t
0
13930
tTr = 60 s
t1, t2= 1 to 10 s
t3, t4= 1 s
ttest = 10 s
tstres = 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–9990
Switching Characteristics of 4N25(G)V
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 5 mA, RL = 100
W
(see figure 3) td4.0
m
s
Rise time
S C L (g)
tr7.0
m
s
Fall time tf6.7
m
s
Storage time ts0.3
m
s
Turn-on time ton 11.0
m
s
Turn-off time toff 7.0
m
s
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k
W
(see figure 4) ton 25.0
m
s
Turn-off time
S F L (g)
toff 42.5
m
s
Switching Characteristics of 4N35(G)V
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100
W
(see figure 3) td2.5
m
s
Rise time
S C L (g)
tr3.0
m
s
Fall time tf4.2
m
s
Storage time ts0.3
m
s
Turn-on time ton <10.0
m
s
Turn-off time toff <10.0
m
s
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k
W
(see figure 4) ton 9.0
m
s
Turn-off time
S F L (g)
toff 25.0
m
s
Channel I
Channel II
100
W
50
W
+ 5 V
Oscilloscope
RL ≥ 1 M
W
CL ≤ 20 pF
IC = 5 mA/ 2 mA;
Adjusted through
input amplitude
IF
0
14950
IF
RG = 50
W
tp = 50
m
s
tp
T
+
0.01
Figure 3. Test circuit, non-saturated operation
Channel I
Channel II
1 k
W
50
W
+ 5 V
Oscilloscope
IC
IF = 10 mA
IF
0
95 10844
RL ≥ 1 M
W
CL ≤ 20 pF
RG = 50
W
tp = 50
m
s
tp
T
+
0.01
Figure 4. Test circuit, saturated operation
tpt
t
0
0
10%
90%
100%
tr
td
ton
tstf
toff
IF
IC
96 11698
tppulse dura-
tion
tddelay time
trrise time
ton (= td + tr) turn-on time
tsstorage time
tffall time
toff (= ts + tf) turn-off time
Figure 5. Switching times
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99 91
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
0
50
100
150
200
250
300
0 40 80 120
P – Total Power Dissipation ( mW )
Tamb – Ambient Temperature (
°
C)
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C
)
96 11874
CTR – Relative Current Transfer Ratio
rel
VCE=10V
IF=10mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
10000
0 102030405060708090100
T
amb – Ambient Temperature ( °C
)
96 11875
I – Collector Dark Current,
CEO
with open Base ( nA )
VCE=10V
IF=0
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.001
0.010
0.100
1.000
1 10 100
IF – Forward Current ( mA )96 11876
I – Collector Base Current ( mA )
CB
VCB=10V
Figure 10. Collector Base Current vs. Forward Current
0.01
0.10
1.00
10.00
100.00
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 11904
VCE=10V
I – Collector Current ( mA )
C
Figure 11. Collector Current vs. Forward Current
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–9992
0.1
1.0
10.0
100.0
0.1 1.0 10.0 100.0
VCE – Collector Emitter Voltage ( V
)
96 11905
I – Collector Current ( mA )
C
20mA
10mA
5mA
2mA
1mA
IF=50mA
Figure 12. Collector Current vs. Collector Emitter Voltage
110
0
0.2
0.4
0.6
0.8
1.0
V – Collector Emitter Saturation Voltage ( V
)
CEsat
IC – Collector Current ( mA )
100
95 10972
CTR=50%
20%
10%
Figure 13. Collector Emitter Saturation Voltage vs.
Collector Current
0.01 0.1 1 10
0
200
400
600
800
1000
h – DC Current Gain
FE
IC – Collector Current ( mA )
100
95 10973
VCE=10V
5V
Figure 14. DC Current Gain vs. Collector Current
0.1 1 10
1
10
100
1000
CTR – Current Transfer Ratio ( % )
IF – Forward Current ( mA )
100
95 10976
VCE=20V
Figure 15. Current Transfer Ratio vs. Forward Current
0 5 10 15
0
10
20
30
40
50
IF – Forward Current ( mA )
20
95 10974
t / t – Turn on / Turn off Time ( s )
off
m
on
Saturated Operation
VS=5V
RL=1k
W
toff
ton
Figure 16. Turn on / off Time vs. Forward Current
02 46
I
C
– Collector Current ( mA )
10
95 10975
t / t – Turn on / Turn off Time ( s )
off
m
on
Non Saturated
Operation
VS=10V
RL=100
W
toff
ton
0
5
10
15
20
8
Figure 17. Turn on / off Time vs. Collector Current
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99 93
XXXXXX
0884
918 A TK 63
15090
Type
Date
Code
(YM)
Coupling
System
Indicator
Company
Logo
Production
Location
Safety
Logo
V
DE
Figure 18. Marking example
Dimensions of 4N25G/ 4N35G in mm
14771
weight: ca. 0.50 g
creepage distance:
y
8 mm
air path:
y
8 mm
after mounting on PC board
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–9994
Dimensions of 4N25/ 4N35 in mm
14770
weight: 0.50 g
creepage distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board