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he information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 'RFXPHQW1R'(-9'6VWHGLWLRQ 'DWH3XEOLVKHG$SULO1&3. 3ULQWHGLQ-DSDQ (c) 2002 2SA1395 ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = -1.0 A, IB1 = -0.1 A, L = 1 mH -100 V Collector to emitter voltage VCEX(SUS)1 IC = -1.0 A, IB1 = -IB2 = -0.1 A, VBE(OFF) = 5.0 V, L = 180 H, clamped -100 V Collector to emitter voltage VCEX(SUS)2 IC = -2.0 A, IB1 = -0.2 A, IB2 = 0.1 A, VBE(OFF) = 5.0 V, L = 180 H, clamped -100 V Collector cutoff current ICBO VCB = -100 V, IE = 0 -10 A Collector cutoff current ICER VCE = -100 V, RBE = 51 , Ta = 125C -1.0 mA Collector cutoff current ICEX1 VCE = -100 V, VBE(OFF) = 5.0 V -10 A Collector cutoff current ICEX2 VCE = -100 V, VBE(OFF) = 5.0 V, Ta = 125C -1.0 mA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -10 A DC current gain hFE1* VCE = -5.0 V, IC = -0.1 A 40 DC current gain hFE2* VCE = -5.0 V, IC = -1.0 A 40 200 Collector saturation voltage VCE(sat)* IC = -1.0 A, IB = -0.1 A -0.6 V Base saturation voltage VBE(sat)* IC = -1.0 A, IB = -0.1 A -1.5 V IC = -1.0 A, RL = 50 , IB1 = -IB2 = -0.1 A, VCC -50 V 0.5 s 1.5 s 0.5 s Turn-on time ton Storage time tstg Refer to the test circuit. Fall time tf * Pulse test PW 350 s, duty cycle 2% hFE CLASSIFICATION Marking M L K hFE2 40 to 80 60 to 120 100 to 200 TYPICAL CHARACTERISTICS (Ta = 25 C) With infinite heatsink (Ta = 25 C) Collector Current IC (A) Total Power Dissipation PT (W) 2 mm aluminum board, silicon grease coating Without heatsink Ambient Temperature Ta (C) 2 Unit Collector to Emitter Voltage VCE (V) Data Sheet D16185EJ1V0DS Derating dT (%) Transient Thermal Resistance Rth(j-c) (C/W) 2SA1395 Case Temperature TC (C) Ta = 25 C (without heatsink) (with infinite heatsink) Collector Current IC (A) Collector Current IC (A) Pulse Width PW (s) DC Current Gain hFE Pulse test Collector to Emitter Voltage VCE (V) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Collector Current IC (A) Pulse test Collector Current IC (A) Data Sheet D16185EJ1V0DS 3 Fall Time tf (s) StorageTime tstg (s) Turn-On Time ton (s) 2SA1395 Collector Current IC (A) SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 4 Data Sheet D16185EJ1V0DS 2SA1395 [MEMO] Data Sheet D16185EJ1V0DS 5 2SA1395 * The information in this document is current as of July, 2001. 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