Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Product Features
• 60 – 3500 MHz
• +24.7 dBm P1dB
• +40.5 dBm Output IP3
• 20.4 dB Gain @ 900 MHz
• 16.5 dB Gain @ 1900 MHz
• +5V Single Positive Supply
• Lead-free/Green/RoHS-
com p li a nt S OT -8 9 Package
Applications
• Final stage amplifiers for
Repeaters
• Mobile Infrastru cture
• DBS / WLL / W-LAN
• Defense / Homeland Security
Product Description
The AH118 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+40.5 dBm OIP3 and +24.7 dBm of compressed 1dB
power. The AH118 is available in a lead-free/green/RoHS-
compliant SOT-89 package. All devices are 100% RF and
DC tested.
The AH118 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. Internal biasing allows the AH118 to
maintain high linearity over temperature and operate
directly off a single +5V supply. This combination makes
the device an excellent candidate for transceiver line cards
in current and next generation multi-carrier 3G base
stations.
Functional Diagram
RF IN GND RF OUT
GND
1 23
4
Function Pin No.
Input / Base 1
Output / Collector 3
Ground 2, 4
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 60 3500
Test Frequency MHz 1900
Gain dB 13.5 16.5
Input Return Loss dB 12
Output Return Loss dB 20
Output P1dB dBm +23 +24.7
Output IP3 (2) dBm +39.5 +40.5
IS-95A Channel Power
@ -45 dBc ACPR dBm +18
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz dBm +16.7
Noise Figure dB 4.3
Operating Current Range mA 140 160 175
Device Voltage V +5
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +15 dBm
Device Voltage +6 V
Device Current 220 mA
Junction Temperature +250 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (3)
Parameter Units Typical
Frequency MHz 900 1900 2140
S21 - Gain dB 20.4 16.5 16.3
S11 - Input R.L. dB -15 -12 -15
S22 - Output R.L. dB -12 -20 -16
Output P1dB dBm +24.2 +24.7 +24.7
Output IP3 dBm +40 +40.5 +40.5
IS-95A Channel Power
@ -45 dBc ACPR, dBm +18.2 +18
wCDMA Channel Power
@ -45 dBc ACLR dBm +16.7
Noise Figure dB 4.0 4.3 4.8
Supply Bias +5 V @ 160 mA
3. Typical parameters reflect performan ce in a tuned application circuit: Vsupply = +5 V, 160 mA,
+25 °C
Ordering Information
Part No. Description
AH118-89G High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 package)
AH118-89PCB900 900 MHz Evaluation Board
AH118-89PCB1900 1900 MHz Evaluation Board
AH118-89PCB2140 2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Typical Device Data
S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system)
00.5 11.5 22.5
Fre quency ( GHz)
Gain / Maximum Stable Gain
-10
-5
0
5
10
15
20
25
30
35
40
Gain (dB)
DB(|S[2,1]|) DB(GMax)
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp Max
6GHz
Swp Min
0.01GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
6GHz
Swp Min
0.01GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments.
S-Parameters (VDevice = +5 V, ICC = 160 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (a ng) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -2.69 -173.38 21.74 153.70 -31.02 11.24 -7.02 -148.17
100 -2.16 -177.19 19.63 150.82 -30.31 7.90 -5.57 -162.45
200 -1.91 178.30 18.22 148.19 -29.87 5.01 -5.06 -173.51
400 -1.77 172.47 17.13 135.41 -29.83 4.07 -4.77 177.87
600 -1.60 166.83 15.99 121.91 -29.49 2.79 -4.60 171.65
800 -1.45 161.09 14.97 109.02 -29.18 2.11 -4.44 166.08
1000 -1.40 155.39 13.84 97.28 -28.70 1.64 -4.26 160.40
1200 -1.25 149.59 12.76 86.83 -28.63 -0.09 -4.14 155.01
1400 -1.20 143.79 11.71 76.95 -28.30 -1.34 -3.97 149.63
1600 -1.17 137.57 10.63 68.15 -27.94 -4.47 -4.00 144.03
1800 -1.13 132.05 9.75 59.55 -27.63 -7.00 -3.86 139.02
2000 -1.11 126.72 8.88 52.22 -27.51 -8.43 -3.84 134.24
2200 -1.05 121.50 8.00 45.09 -27.06 -11.00 -3.62 129.30
2400 -0.99 115.58 7.31 37.40 -27.02 -14.19 -3.55 124.42
2600 -0.93 110.41 6.52 30.66 -26.78 -18.24 -3.46 119.42
2800 -0.95 105.30 5.73 23.51 -26.66 -20.10 -3.34 114.26
3000 -0.92 100.11 5.05 17.07 -26.61 -23.28 -3.30 109.29
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .062” total thickness with a .014” Getek top RF layer, 4 layers (other layers added for rigidity) ,
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
900 MHz Application Circuit (AH118-89PCB900)
Frequency 900 MHz
Gain 20.4 dB
Input Return Loss 15 dB
Output Return Loss 12 dB
Output P1dB +24.2 dBm
Output IP3
(+11 dBm / tone, 1 MHz spacing) +40 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +18.2 dBm
Noise Figure 4 dB
Device / Supply Voltage +5 V
Quiescent Current 160 mA
ID=C4
C=100 pF ID=C5
C=100 pF
ID=C9
C=2 pF
DIODE1 ID=C3
C=56 pF
ID=C2
C=1000 pF
ID=C1
C=1e5 pF
ID=C7
C=8.2 pF
IND
ID=L1
L=33 nH
ID=L2
R=0 Ohm
ID=L3
L=2.7 nH
NET="AH118"
Vcc = +5 V
5.6 V
C7 should be plac ed at the silk screen
marker 'C' on the WJ evaluation board.
All passi ve components are of size 0603 unless otherwise noted.
C9 should be placed at the
W J evaluati on board.
size 1206
size 0805
The capacitor should be placed
15.8° @ 0.9GHz from pin 3
The capacitor should be placed
6.1° @ 0.9GHz from pin 1 of the AH 118
silk screen marker '7' on the
size 0805
The diode D1 is used as over-vol tage protection on the evaluation
boards. It is not specifically re quired in the final circuit layout in
a system using a DC regulator.
of the AH118.
L2 - the 0 ohm resistor - can be removed (with a thru line) in the
final ci rcuit layout.
configuration.
Component R1 is shown in the silkscreen but is not used for this
S21 vs. Frequency
17
18
19
20
21
22
800 850 900 950 1000
Frequency (MHz)
S21
(
dB
)
+25°C -40°C +85°C
ACP R v s . Cha n ne l P owe r
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz M eas BW, 900 MH z
-70
-60
-50
-40
12 13 14 15 16 17 18 19
Output Channel Power (dBm )
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
800 850 900 950 1000
Frequency (MHz)
S11
(
dB
)
+25°C -40°C +85°C
S22 vs. Frequency
-30
-25
-20
-15
-10
-5
0
800 850 900 950 1000
Frequency (MHz)
S22
(
dB
)
+25°C -40°C +85°C
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
1900 MHz Application Circuit (AH118-89PCB1900)
Frequency 1900 MHz
Gain 16.8 dB
Input Return Loss 12 dB
Output Return Loss 20 dB
Output P1dB +24.7 dBm
Output IP3
(+11 dBm / tone, 1 MHz spacing) +40.5 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +18 dBm
Noise Figure 4.3 dB
Device / Supply Voltage +5 V
Quiescent Current 160 mA
Gain
13
14
15
16
17
18
1800 1850 1900 1950 2000
Frequency (M H z)
S11, S22 vs. Frequenc
y
-25
-20
-15
-10
-5
0
1.8 1.85 1.9 1.95 2
Frequency (GH z)
S11
,
S22
(
dB
)
S22
S11
ACP R v s . Cha n ne l P owe r
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz M eas BW , 1900 M Hz
-70
-60
-50
-40
12 13 14 15 16 17 18 19
Output Channel Power (dBm )
CAP
ID=C1
C=10000 0 pF
CAP
ID=C2
C=1000 p F
CAP
ID=C3
C=56 pF
CAP
ID=C9
C=1.8 pF
CAP
ID=C7
C=2.7 pF
CAP
ID=C4
C=56 pF IND
ID=L2
L= 4.7 nH
RES
ID=L3
R=0 Ohm
CAP
ID=C5
C=56 pF
IND
ID=L1
L=18 nH
SUBCKT
ID=U1
NET="AH118"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z= 5 0 O h m
C7 should be placed at the silk screen ma rker
'A' on the WJ evaluation board or 4.6 deg @ 1.84GHz
from pin 1 of the AH118 C9 should be placed at the silk screen marker '5' on the
evaluation bo ard or 23 deg @ 1.9GHz from pin 3 of AH118.
Component R1 is shown in the silkscreen but is not used for this
L3-- 0 ohm resistor can be removed from the final layout.
configuration.
+5V
All passive components are of size 0603 unless otherwise noted.
Diode
5.6V
The diode D1 is used as over-voltage protection on the evaluation.
boards. It is not specifically required in the final circuit layout in
a system using a DC regul ator.
D1
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
2140 MHz Application Circuit (AH118-89PCB2140)
Frequency 2140 MHz
Gain 16.3 dB
Input Return Loss 15 dB
Output Return Loss 16 dB
Output P1dB +24.7 dBm
Output IP3
(+11 dBm / tone, 1 MHz spacing) +40.5 dBm
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) +16.7 dBm
Noise Figure 4.8 dB
Device / Supply Voltage +5 V
Quiescent Current 160 mA
ID=C4
C=56 pF ID=C5
C=56 pF
ID=C9
C=1.2 pF
DIODE1 ID=C2
C=56 pF
ID=C3
C=1000 pF
ID=C1
C=1e5 pF
ID=L1
L=18 nH
ID=L3
R=0 Ohm
ID=C6
C=1.8 pF
ID=L2
C=1.5 pF
NET="AH118"
Vcc = +5 V
5.6 V
All passive components are of size 0603 unless otherwise noted. size 1206
size 0805
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specific ally required in the final circuit layout in
a system using a DC regulator.
final circuit layout.
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
C9 should be placed at the
WJ eval uation board.
The capacitor should be placed
20.5° @ 2.14GHz from pin 3
silk screen marker '4' on the
of the AH118.
C6 should be placed at the silk screen
marker "F" on the WJ evaluation board.
The capacitor should be placed
32.6° @ 2.14GHz from pin 1 of the AH118
S21 vs. Frequency
13
14
15
16
17
18
2110 2130 2150 2170
Frequency (MHz)
S21
(
dB
)
+25°C -40°C +85°C
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-60
-55
-50
-45
-40
-35
12 13 14 15 16 17 18
Output Channe l Power (dBm )
ACLR
(
dBc
)
S11 vs. Frequency
-20
-15
-10
-5
0
2110 2130 2150 2170
Frequency (MHz)
S11
(
dB
)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
2110 2130 2150 2170
Frequency (MHz)
S22
(
dB
)
+25°C -40°C +85°C
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 6 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
70 MHz Reference Design
Frequency 70 MHz
Gain 24.2 dB
Input Return Loss 17 dB
Output Return Loss 16 dB
Output P1dB +23.6 dBm
Output IP3
(+11 dBm / tone, Df=1 MHz) +41 dBm
Noise Figure 4.8 dB
Supply Voltage +5 V
Current 160 mA
50 60 70 80 90
Frequency (MHz)
Gain / Return Loss
16
18
20
22
24
26
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)| ) (R) DB(|S(2,2)|) (R) DB(|S (2, 1)|) (L)
C=100000 pF
C=1000 pF
C=1000 pF
L=180 nH
C=1000 pF L=47 nH
C=100 pF
NET="AH118"
Vcc = +5 V
5.6 V
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
150 MHz Reference Design
Frequency 150 MHz
Gain 23 dB
Input Return Loss 21 dB
Output Return Loss 14 dB
Output P1dB +23.5 dBm
Output IP3
(+11 dBm / tone, Df=1 MHz) +40 dBm
Noise Figure 4.9 dB
Supply Voltage +5 V
Current 160 mA
120 130 140 150 160 170 180
Frequency (MHz)
Gain / Return Loss
19
20
21
22
23
24
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L)
C=100000 pF
C=1000 pF
C=1000 pF
L=82 nH
C=82 pF
L=18 nH
NET="AH118"
Vcc = +5 V
5.6 V
T
he diode D1 is used as over-voltage protection on the
evaluation boards. It is not specifically required in the
final circuit layout in a system using a DC regulator.
340 MHz Reference Design
Frequency 340 MHz
Gain 20.6 dB
Input Return Loss 14 dB
Output Return Loss 13 dB
Output P1dB +24 dBm
Output IP3
(+11 dBm / tone, Df=1 MHz) +41.4 dBm
Noise Figure 5.1 dB
Supply Voltage +5 V
Current 160 mA
260 280 300 320 340 360 380 400 420
Frequency (MHz)
Gain / Return Loss
17
18
19
20
21
22
Gain (dB)
-20
-15
-10
-5
0
5
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S(2,1) |) (L) DB (|S(2,2)|) (R)
C=18 pF
C=1000 pF
C=1000 pF
C=1e5 pF
C=5.6 pF
L=100 nH
L=15 nH
L=8.2 nH R=1.8 Ohm
C=1000 pF
NET="AH118"
+5V
5.6 V
The diode D1 is used as over-voltage protection on the
evaluation boards. It is not specifically required in the
final circuit layout in a system using a DC regulator.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 7 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
450 MHz Reference Design
Frequency 450 MHz
Gain 22 dB
Input Return Loss 15 dB
Output Return Loss 19 dB
Output P1dB +24 dBm
Output IP3
(+11 dBm / tone, Df=1 MHz) +40 dBm
Noise Figure 5.7 dB
Supply Voltage +5 V
Current 160 mA
400 420 440 460 480 500
Frequency (MHz)
Gain / Return Loss
18
19
20
21
22
23
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)| ) (R)
C=1000 pF
C=1000 pF
C=1000 pF
C=1e5 pF
L=22 nH
C=27 pF
L=3.3 nH NET="AH118"
5.6 V
T
he diode D1 is used as over-volta
g
e protection on the evaluation
boards. It is not speci f i cally required in the f i nal ci rcuit layout in
a system using a DC regulator.
Vcc = +5 V
2450 MHz Reference Design
Frequency 2450 MHz
Gain 14.4 dB
Input Return Loss 14 dB
Output Return Loss 15 dB
Output P1dB +25 dBm
Output IP3
(+11 dBm / tone, Df=1 MHz) +38 dBm
Supply Voltage +5 V
Current 160 mA
2.3 2.4 2.5 2.6
F requency (G Hz )
Ga in / R e tur n L o ss
6
8
10
12
14
16
Gain (dB)
-20
-15
-10
-5
0
5
S11, S22 (dB)
D B (|S (1,1)|) (R ) DB (|S(2,1)|) (L) DB(|S(2,2)|) (R)
ID=C1
C=1e5 pF
ID=C2
C=1000 pF
ID=C3
C=56 pF
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
ID=C6
C=1.2 pF ID=C7
C=1.2 pF
ID=D1
ID=L1
L=18 nH
ID=L2
L=5.6 nH
ID=L3
R=0 Ohm
NET="AH118"
Component R1 is shown in the silkscreen but is not used for this
configuration.
Vcc = +5 V
5.6 V
A
ll passive components are of s ize 0603 unless otherw ise noted. size 1206
size 0805
size 0805
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
L3 - the 0 ohm resistor - can be removed (with a thru line) in the
final circui t layout.
be placed .050" away from pin 1.
The center of this component should
The center of this component should be
placed .170" away from the center of C6.
be placed .200" away from pin 3.
The center of this component should
3500 MHz Reference Design
Frequency 3500 MHz
Gain 11 dB
Input Return Loss 14 dB
Output Return Loss 10 dB
Output P1dB +23.5 dBm
Output IP3
(+11 dBm / tone, Df=1 MHz) +38.5 dBm
Noise Figure 5.0 dB
Supply Voltage +5 V
Current 160 mA
3.4 3.45 3.5 3.55 3.6
Frequency (GHz)
Gain / Return Loss
8
9
10
11
12
13
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S(2, 1)|) (L) DB(|S(2,2)|) (R)
ID=C1
C=100000 pF
ID=C2
C=1000 pF
ID=C3
C=56 pF
ID=C4
C=56 pF
ID=C6
C=0.2 pF
ID=D1
ID=L1
L=18 nH
ID=L2
L=6.8 nH
ID=C7
C=.8 pF
NET="AH118"
Component R1 is shown in the silkscreen but is not used for this
configuration.
Vcc = +5 V
5.6 V
All passive components are of size 0603 unless otherwise noted. size 1206
size 0805
size 0805
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a DC regulator.
be placed .050" away from pin 1.
The center of this component should
The center of this component should be
placed .170" away from the cent er of C6.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 8 of 8 May 2006
AH118
¼ Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
AH118-89G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature (1) -40 to +85 °C
Thermal Resistance (2), Rth 92 °C / W
Junction Temperature (3), Tj 159 °C
Notes:
1. The amplifier can be op erated at 105 °C case temperature for up to 1000
hours over its lifetime without degradation in performance and will not
degrade device operation at the recommended maximum 85 °C case
temperature for the rest of its lifetime.
2. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 °C.
3. This corresponds to the typical biasing condition of +5V, 160 mA at an
85°C case temperature. A minimum MTTF of 1 million hours is achieved
for junction temperatures below 247 °C.
Product Marking
The component will be marked with an
“AH118G” designator with an alphanumeric
lot code on the top surface of the package.
The obsolete tin-lead package is marked with
an “AH118” or “E099” designator followed
by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1A
Value: Passes between 250 and 500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias ar e critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
MTTF vs. GND Tab Temperature
100
1000
10000
100000
60 70 80 90 100 110 120
Tab Temper a t ure (°C )
