BZT55C4V3 - Vishay Presicion Group

BZT55-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 22-Nov-11 1Document Number: 85637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Small Signal Zener Diodes

FEATURES

• Very sharp reverse characteristic

• Low reverse current level

• Very high stability

•Low noise

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Voltage stabilization

PRIMARY CHARACTERISTICS

PARAMETER VALUE UNIT

VZ range nom. 2.4 to 75 V

Test current IZT 2.5 to 5 mA

VZ specification Pulse current

Int. construction Single

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

BZT55-series BZT55-series-GS18 10 000 per 13" reel 10 000/box

BZT55-series BZT55-series-GS08 2500 per 7" reel 12 500/box

PACKAGE

PACKAGE NAME WEIGHT MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

SOLDERING

CONDITIONS

QuadroMELF SOD-80 34 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Power dissipation RthJA  300 K/W Ptot 500 mW

Zener current IZPV/VZmA

Junction to ambient air On PC board

50 mm x 50 mm x 1.6 mm RthJA 500 K/W

Junction temperature Tj175 °C

Storage temperature range Tstg - 65 to + 175 °C

Forward voltage (max.) IF = 200 mA VF1.5 V

BZT55-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 22-Nov-11 2Document Number: 85637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin.  35 nA at Tj 25 °C

(1) tp  10 ms, T/tp > 1000

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PART NUMBER

ZENER VOLTAGE

RANGE (1)

TEST

CURRENT

REVERSE LEAKAGE

CURRENT

DYNAMIC

RESISTANCE

TEMPERATURE

COEFFICIENT

VZ at IZT1 IZT1 IZT2

IR at VRZZ at IZT1 ZZK at IZT2

TKVZ

Tamb =

25 °C

Tamb =

150 °C f = 1 kHz

VmA μA V%/K

MIN. NOM. MAX. MAX. MAX. MIN. MAX.

BZT55C2V4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06

BZT55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06

BZT55C3V0 2.8 3.0 3.2 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55C3V3 3.1 3.3 3.5 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55C3V6 3.4 3.6 3.8 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55C3V9 3.7 3.9 4.1 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55C4V3 4 4.3 4.6 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03

BZT55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02

BZT55C5V1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02

BZT55C5V6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05

BZT55C6V2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06

BZT55C6V8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07

BZT55C7V5 7 7.5 7.9 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07

BZT55C8V2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08

BZT55C9V1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09

BZT55C10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1

BZT55C11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11

BZT55C12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11

BZT55C13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11

BZT55C15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11

BZT55C16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11

BZT55C18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11

BZT55C20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11

BZT55C22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12

BZT55C24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12

BZT55C27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12

BZT55C30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12

BZT55C33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12

BZT55C36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12

BZT55C39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12

BZT55C43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12

BZT55C47 44 47 50 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12

BZT55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12

BZT55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12

BZT55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12

BZT55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12

BZT55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12

BZT55-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 22-Nov-11 3Document Number: 85637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin.  35 nA at Tj 25 °C

(1) tp  10 ms, T/tp > 1000

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PART NUMBER

ZENER VOLTAGE

RANGE (1)

TEST

CURRENT

REVERSE LEAKAGE

CURRENT

DYNAMIC

RESISTANCE

TEMPERATURE

COEFFICIENT

VZ at IZT1 IZT1 IZT2

IR at VRZZ at IZT1 ZZK at IZT2

TKVZ

Tamb =

25 °C

Tamb =

150 °C f = 1 kHz

VmA μA V%/K

MIN. NOM. MAX. MAX. MAX. MIN. MAX.

BZT55B2V4 2.35 2.4 2.45 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06

BZT55B2V7 2.64 2.7 2.76 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06

BZT55B3V0 2.94 3.0 3.06 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55B3V3 3.24 3.3 3.36 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55B3V6 3.52 3.6 3.68 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55B3V9 3.82 3.9 3.98 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05

BZT55B4V3 4.22 4.3 4.38 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03

BZT55B4V7 4.6 4.7 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02

BZT55B5V1 5 5.1 5.2 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02

BZT55B5V6 5.48 5.6 5.72 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05

BZT55B6V2 6.08 6.2 6.32 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06

BZT55B6V8 6.66 6.8 6.94 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07

BZT55B7V5 7.35 7.5 7.65 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07

BZT55B8V2 8.04 8.2 8.36 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08

BZT55B9V1 8.92 9.1 9.28 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09

BZT55B10 9.8 10 10.2 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1

BZT55B11 10.78 11 11.22 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11

BZT55B12 11.76 12 12.24 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11

BZT55B13 12.74 13 13.26 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11

BZT55B15 14.7 15 15.3 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11

BZT55B16 15.7 16 16.3 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11

BZT55B18 17.64 18 18.36 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11

BZT55B20 19.6 20 20.4 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11

BZT55B22 21.55 22 22.45 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12

BZT55B24 23.5 24 24.5 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12

BZT55B27 26.4 27 27.6 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12

BZT55B30 29.4 30 30.6 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12

BZT55B33 32.4 33 33.6 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12

BZT55B36 35.3 36 36.7 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12

BZT55B39 38.2 39 39.8 2.5 1 < 0.1 < 5 30 < 90 < 500 0.04 0.12

BZT55B43 42.1 43 43.9 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12

BZT55B47 46.1 47 47.9 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12

BZT55B51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12

BZT55B56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12

BZT55B62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12

BZT55B68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12

BZT55B75 73.5 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12

BZT55-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 22-Nov-11 4Document Number: 85637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

Fig. 2 - Typical Change of Working Voltage under Operating

Conditions at Tamb=25°C

Fig. 3 - Typical Change of Working Voltage vs. Junction

Temperature

Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage

Fig. 5 - Diode Capacitance vs. Z-Voltage

Fig. 6 - Forward Current vs. Forward Voltage

0 120 160

100

300

400

500

600

Ptot - Total Power Dissipation (mW)

Tamb - Ambient Temperature (°C)

200

95 9602

200

10 15 20

100

1000

- Voltage Change (mV)

- Z-Voltage (V)

95 9598

Tj = 25 °C

IZ = 5 mA

- 60 60 120 180

0.8

0.9

1.0

1.1

1.2

1.3

Ztn

- Relative Voltage Change

Tj - Junction Temperature (°C)

240

95 9599

VZtn = VZt/VZ (25 °C)

= 10 x 10-4/K

8 x 10-4/K

2 x 10-4/K

6 x 10-4/K

4 x 10-4/K

- 4 x 10-4/K

- 2 x 10-4/K

- 5

VZ - Z-Voltage (V)

95 9600

IZ = 5 mA

0 10 203040 50

TKVZ - Temperature Coefficient

of VZ (10-4/K)

10 15

100

150

200

- Diode Capacitance (pF)

- Z-Voltage (V)

95 9601

= 25 °C

= 2 V

0 0.2 0.4 0.6 0.8

0.001

0.01

0.1

100

1.0

95 9605

IF - Forward Current (mA)

VF - Forward Voltage (V)

Tj = 25 °C

BZT55-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 22-Nov-11 5Document Number: 85637

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Fig. 7 - Z-Current vs. Z-Voltage

Fig. 8 - Z-Current vs. Z-Voltage

Fig. 9 - Differential Z-Resistance vs. Z-Voltage

Fig. 10 - Thermal Response

820

95 9604

100

IZ - Z-Current (mA)

Ptot = 500 mW

Tamb = 25 °C

046 12

VZ - Z-Voltage (V)

15 20 25 30

IZ - Z-Current (mA)

VZ - Z-Voltage (V)

95 9607

Ptot = 500 mW

Tamb = 25 °C

0 101520

100

1000

95 9606

Tj = 25 °C

IZ = 1 mA

5 mA

10 mA

- Z-Voltage (V)

- Differential Z-Resistance (Ω)

100

1000

Zthp - Thermal Resistance for Pulse Cond. (KW)

tp - Pulse Length (ms) 95 9603

10-1 100101102

tp/T = 0.5

tp/T = 0.2

tp/T = 0.1

tp/T = 0.05

tp/T = 0.02

tp/T = 0.01

Single Pulse RthJA = 300 K/W

T = Tjmax - Tamb

iZM = (- VZ + (VZ

2 + 4rzj x T/Zthp) 1/2)/(2rzj)

BZT55-Series

www.vishay.com Vishay Semiconductors

Rev. 1.7, 22-Nov-11 6Document Number: 85637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80

96 12071

Cathode identification

1.25 (0.049) min.

3.7 (0.146)

3.3 (0.130)

0.47 (0.019) max.

2.5 (0.098) max.

1.6 (0.063)

1.4 (0.055)

5 (0.197) ref.

Foot print recommendation:

2 (0.079) min.

> R3 (R0.118)

glass

1.7 (0.067)

glass

The gap between plug and glass can

be either on cathode or anode side

Document Number: 91000 www.vishay.com

Revision: 11-Mar-11 1

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