ih <> Ww 2N2218-2N2218A-2N 2219-2N 2219A Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Planar Switching Transistors Anwendungen: HF-Verstarker und Schalter Applications: RF amplifiers and switches Besondere Merkmale: Features: @ Hohe Sperrspannung @ Hohe Stromverstarkung @ Verlustleistung 3 W @ High reverse voltage @ High current gain @ Power dissipation 3 W Abmessungen in mm Dimensions in mm Kollektor mit Gehause verbunden Collector connected with case Normgehause Case 5C3 DIN 41873 JEDEC TO 39 Gewicht - Weight max. 1,59 Absolute Grenzdaten 2N 2218 2N2218A Absolute maximum ratings 2N 2219 2N2219A Kollektor-Basis-Sperrspannung UcBo 60 75 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung UcEo 30 40 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung VEBO 5 6 Vv Emitter-base voltage Kollektorstrom Io 800 mA Collector current Gesamtverlustieistung Total power dissipation lamb = 25 & Prot 800 mw lamb = 45C Prot 700 mW case = 25C Prot 3 w case = 45C Prot 2,6 W Sperrschichttemperatur 4 175 C Junction temperature Lagerungstemperaturbereich 'stg -65 ... +200 C Storage temperature range B 2/V.2. 550/0875A 1 4812N 2218 -2N 2218A: 2N 2219 { 74258 Th Prot So c tamb:case ~ 80 Warmewiderstande Thermal resistances Sperrschicht-Umgebung Junction ambient Sperrschicht-Gehduse Junction case Statische KenngrBen DC characteristics tamb = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current 2 N 2218, 2N 2219 Ucs =50V UVop = 5OV, lamb = 150C 2N 2218A,2N2219A Up =60V Ucp = 60V, lamb = 150C UcE = 60 Vv, Vep =3V *) AQL = 0,65%, **) AGL = 2,5% 482 -2N2219A Ig = 10 mA famb = 25 C 2N2216A 2N2219 A 2N2218 2N 2219 0,1 1 10 kQ Rae Min. Typ. Max, Rthia 188 C/W Rtruc 50 C/W IoBo *) 10 nA loBO *) 10 nA IcBo **) 10 yA2N 2218 -2N 2218A-2N 2219-2N 2219A Min. Typ. Max. Emitterreststrom Emitter cut-off current Uep=3V IEBO 10 nA Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage 2N 2218A,2N2219A UBR)CBO *) 75 Vv Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Ig =10mA 2N 2218, 2N 2219 UBR)CEO *)') 30 Vv 2N 2218A,2N 2219A UBR)CEO *)') 40 Vv Emitter-Basis-Durchbruchspannung Emitter-base breakdown voitage Ie = 10pA 2N 2218, 2N 2219 UBR)EBO *) 5 Vv 2N 2218A,2N 2219A UBR)EBO *) 6 Vv Kollektor-Sattigungsspannung Collector saturation voltage Ig = 150 mA, Jp = 15 mA 2N2218,2N2219 Ucesat) 400 =mv 2N2218A,2N2219A = Ucesat') 300 = mv Ig = 500 mA, Ig = 50 mA 2N 2218,2N2219 = Ucgsat*)') 1,6 Vv 2N2218A,2N2219A Upcegat*)') 1,0 v Basis-Sattigungsspannung Base saturation voltage Io = 150 mA, 7p = 15mA 2N2218,2N2219 = Upegat ') 1,3 v 2N2218A,2N2219A = Upesat') 1,2 Vv Iq = 500 mA, Jp = 50 mA 2 N 2218, 2 N 2219 Upesat*)') 2,6 Vv 2N2218A,2N2219A = Upesat*)') 2,0 v t *) AGL = 0,65%, ') = 0,01, tp =0,3 ms 4832 N 2218 -2N 2218A:2N 22192N 2219A Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio Uce =10V, Io =0,1 mA 2N 2218,2N 2218A 2N 2219,2N 2219A Toe = 10V, Jao =1mA 2N 2218, 2N 2218A 2N 2219, 2N 2219A UcE =10V, Io =10mA 2N 2218,2N 2218A 2N2219,2N 2219A Ugg = 10V, Ig = 10 MA, tamp = 55C 2N2218A 2N2219A Uoe = 10V, lo = {50mA 2N 2218,2N2218A 2N 2219,2N2219A Uce = 10V, Io == 500 mA 2N 2218 2N2218A 2N 2219 2N2219A UcE = 1V, lo = 150mA 2N 2218,2N2218A 2N 2219,2N2219A Dynamische Kenngrfien AC characteristics lamb = 25C Transitfrequenz Gain bandwidth product Uce = 20V, Ig = 20 mA, f = 100 MHZ 2 .N 2218, 2N 2218 A, 2N 2219 2N2219A Kollektor-Basis-Kapazitat Colfector-base capacitance Uog = 10V, f = 1 MHz Emitter-Basis-Kapazitat Emitter-base capacitance Veg =9,5V, f= 1 MHz 2N 2218, 2N 2219 2N 2218 A,2N2219A RauschmaB Noise figure Uce = 10 V, Ig = 100 pA, Ra = 1 kQ, f =1kHz 2N2219A ft fT CcBo CeBO CEBO F t *) AQL =0,65%, **) AQL=2,5%, ') - = 0,01, fp = 0,3 ms 484 Min. 20 35 25 50 35 75 15 35 40 100 20 25 30 40 20 50 250 300 Typ. Max. 120 300 MHz MHz 8 pF 30 pF 25 pF 4 dB2N 2218 -2N 2218A:2N 2219-2N 2219A Vierpol Kenngr6Ben Min. Typ. Max. Two port characteristics tamb = 25C Emitterschaltung 2N2218A,2N2219A Common emitter configuration Upe = 10V, lo = 1 mA, J =1kHz KurzschluB-Eingangswiderstand hig 2,2 kQ Short circuit input resistance Leerlauf-Spannungsrickwirkung hve 3-107 Open circuit reverse voltage transfer ratio Leerlauf-Ausgangsleitwert hoe 9 pS Open circuit output conductance KurzschluB-Stromverstarkung Short circuit forward current transfer ratio 2N2218A hte 30 150 2N2219A hte 50 300 Uog = 10 V, fg = 10 mA, 2N2218A hte 50 300 2N2219A te 75 375 Schaltzeiten Switching characteristics Io = 150 mA, By = -lBo =15mA, lamb = 25C Einschaltzeit Turn-on time Ry = 409 fon 25 ns Ausschaltzeit Turn-off time RL = 400 loft * 150 ns Rg =500 tf =tp<15ns 2 = 0,01 fp = 0,2 us 20v Oszilloskop: 6800 Oscilloscope: R, 2100 kQ _ p a 751256 a MeBschaltung fiir: Test circuit for: for loft 2) sienhe MeBschaltung see test circuit 4852 N 2218 -2N 2218A-2N 2219-2N 2219A ose oO -_ 400 mA 300 200 100 486 70226 Th famb = 25 C ip= 6 mA amb = 25 C 2v 0 10 UcE 70266 Th hg = 10 famb = 25C 2N 2218 2N2218A 2219 2N2219 A 10 100 mA i~_~ c 20V Uce 70266 Tk2N 2218 -2N2218A-2N 2219-2N2219A 0,1 2N2218 70262 Tk 2N2218A famb=65 C 10 100 mA lo f 2N 2219 702684 Tk 2N2219A Tre tamb = 85C 300 200 ** . a 10C 100 io 487