Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. [_] 3 d APPLICATIONS of e Low level general purpose amplifiers in thick and 1|_ | a 2 thin-film circuits. Top view anses PINNING - SOT23 Marking codes: BFR30: Mip. PIN SYMBOL DESCRIPTION BFR31: M2p. 1 d drain) oo ; 2 5 source(!) Fig.1 Simplified outline and symbol. 3 9 gate Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. | UNIT Vos drain-source voltage - +25 Vv Vaso gate-source voltage open drain - -25 Vv Prot total power dissipation Tamb < 40 C - 250 mw lpss drain current Ves = 0; Vps = 10 V BFR3O 4 10 mA BFR31 1 5 mA l yis| common-source transfer admittance | Ip = 1 MA; Vps = 10 V; f= 1 kHz BFR30 1 4 mS BFR31 1.5 4.5 mS 1997 Dec 05 424Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vps drain-source voltage - +25 Vv Voco drain-gate voltage open source - ~25 Vv Vaso gate-source voltage open drain - ~25 v Ip drain current - 10 mA le forward gate current (DC) - 5 mA Prot total power dissipation Tamb < 40 C; note 1; see Fig.2 - 250 mw Tstg storage temperature -65 +150 C Tj operating junction temperature - 150 C Note 1. Mounted on a ceramic substrate of 8 x 10 x 0.7 mm. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j-a thermal resistance from junction to ambient note 1 430 K/W Note 1. Mounted on a ceramic substrate of 8 x 10 x 0.7 mm. MDA245 300 Prot (mW) 200 \ Q 40 80 120 160 200 Tamb (C) Fig.2 Power derating curve. 1997 Dec 05 425Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | MAX. | UNIT lass gate cut-off current Vos = 0; Veg = -10 V - -0.2 nA loss drain current Vas = 0; Vong = 10 V BFR30 4 10 mA BFR31 1 5 mA Vas gate-source voltage Ip = 1 MA; Vps = 10 V BFR30 -0.7 -3 Vv BFR31 0 -1.3 Vv Ves gate-source voltage Ip = 50 WA; Vpg = 10 V BFR30 _ -4 Vv BFR31 - -2 Vv Veasott gate-source cut-off voltage Ip = 0.5 nA; Vps = 10 V BFR30 ~ -5 Vv BFR31 ~ 2.5 Vv lte1 common-source transfer admittance | Ip = 1 MA; Vpg = 10 V; f = 1 kHz; BFR30 Tamb = 25 C 1 4 mS BFR31 1.5 45 mS | yes common-source transfer admittance | Ip = 200 pA; Vps = 10 V; f = 1 KHz; BFR30 Tamb = 25 C 0.5 - mS BFRSi 0.75 ~ mS TYos | common source output admittance Ip = 1 MA; Vpg = 10 Vi f= 1 KHz BFR30 - 40 us BFR31 ~ 25 ps los | common source output admittance Ip = 200 LA; Vpg = 10 V; f= 1 KHz BFR30 ~ 20 us BFR31 ~ 15 us Cis input capacitance Vos = 10 V; f= 1 MHz lp=1mA ~ 4 pF Ip = 0.2 nA ~ 4 pF Crs feedback capacitance Vos = 10 V; f= 1 MHz; Tamp = 25 C Ip=1mA - 1.5 pF Ip = 200 pA ~ 15 pF Va equivalent input noise voltage Ip = 200 A; Vos = 10 V; - 0.5 uv B = 0.6 to 100 Hz 1997 Dec 05 426Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDAG5S7 'b (mA) 1 0 Ves (V) BFR30. Vos = 10 V; 7) = 25 C. Fig.3 Input characteristics. MOA65B 10 Ip (mA) Vps ) BFR30. T, = 25C. Fig.4 Output characteristics; typical values. MDAG59 ID (mA) - BFR31. Vps = 10 V; Tj = 25 C. Fig.5 Input characteristics. MDA660 ID (mA) Vos ) BFR31. 7, =25 C. Fig.6 Output characteristics; typical values. 1997 Dec 05 427Philips Semiconductors N-channel field-effect transistors Product specification BFR30; BFR31 MDA661 'p (mA} BFR30. Vos = 10V. Fig.7 Drain current as a function of junction temperature; typical values. MDASE2 Ip (mA) 25 50 75 100 Tj (C) 125 BFRS1. Vos = 10V. Fig.8 Drain current as a function of junction temperature; typical values. MDA656 10 lass (nA) 10-1 10-2 103 a 50 100 150 100 2 Tj (C) Ves =-10 V; Vos = 0. Fig.9 Gate cut-off current as a function of junction temperature; typical values. MDAG663 ~-6 V@siott) (V) ~4 -2 0 Q 2 4 6 8 10 lpss (mA) Ip = 0.5 NA; Vog = 10 V; Veg = 0; T = 25 C. Fig.10 Gate-source cut-off voltage as a function of drain current; typical values. 1997 Dec 05 428Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDAG64 75 [ts| (mA) 5 BFR31 a Leer a Za |" BFR30 25 fo v 0 0 2 Ip (ma) Vog = 10 V; f= 1 KHz; Tams = 25 C. Fig.11 Common source transfer admittance as a function of drain current; typical values. 75 MDA665 iYos| (WAN) 50 ma La BFR31 25 aa Zi L Va 0 0 2 Ip (may Vos = 10 V; f = 1 KHz: Tame = 25 C. Fig.12 Common source output admittance as a function of drain current; typical values. 104 MODAGE6 lasl (HAV) 108 Vps V) f= 1 kHz; Tamp = 25 C. (1) Ip=4mA. (2) Ip=1mA. Fig.13. Common source output admittance as a function of drain-source voltage; typical values. MDA667 Cig (pF) Vos = 10 V; f= 1 MH2; Tamb = 25 C. Fig.14 Input capacitance as a function of gate-source voltage; typical values. 1997 Dec 05 429Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA668 -1 (pF) -0.8 0 1 -2 -3 -4 -5 Ves () Vog = 10 V; f= 1 MHz; Tamp = 25 C. Fig.15 Feedback capacitance as a function of gate-source voltage; typical! values. 104 MDABE9 en (nVA/Az) 408 402 10 1 3 4 5 6 10 107 10 10 10 (Hz) 10' Vpg = 10 V; Tamp = 25 C. (1) BFR&ts tp = 1 mA. (2) BFR30; Ip = 4 mA. Fig.16 Equivalent noise voltage source as a function of frequency; typical values. 1997 Dec 05 430Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 MDA670 404 'n ((ANHZ) 403 102 10 1 10 10? 103 104 108 108 Vg = 10 V: Tamp = 25 C. (1) BFR31; Ip =1mA. (2) BFR30; Ip = 4 mA. Fig.17 Equivalent noise current source as a function of frequency; typical values. 1997 Dec 05 431