AYf, Bitoruemores BTA40 A/B STANDARD TRIACS FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10Vius BTA Family : INSULATING VOLTAGE = 2500Vams) (UL RECOGNIZED : E81734) DESCRIPTION The BTA40 AJB triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- RD91 quired. Application such as phase control and (Plastic) Static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I(RMS) RMS on-state current To = 75C 40 A (360 conduction angle) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 315 A ( Tj initial = 25C ) tp = 10 ms 300 12t (2t value tp = 10 ms 450 Aes di/at Critical rate of rise of on-state current Repetitive 10 Alus Gate supply : IG = 500mA dic/ct = 1A/ps F =50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to + 125 C Ti Maximum lead temperature for soldering during 10 s at 4.5 mm 260 G from case Symbol Parameter BTA40.... A/B Unit 400 600 700 800 VDRM Repetitive peak off-state voltage 400 600 700 800 Vv VRRM Tj = 125C March 1995 15 Me 7929237 0065190 605 me ea aaa ata asaaaaamaasaammmmasaemaaamasaaaamamadaauaassaecamaaaaaiasaaaasiacasaasasaaasascaiaasmsscacaaaaasasaaaaaaaasa 222222BTA40 A/B THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) DC |Junction to case for DC 1.2 C/W Rth (j-c) AC | Junction to case for 360 conduction angle ( F= 50 Hz) 0.9 C/W GATE CHARACTERISTICS (maximum values) PG (AV) =1W-PGM = 40W (p= 20s) IGM = SA (p= 20s) ~~ VGM = 16V (tp = 20 ps). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit A B IGT Vp=12V. (DC) AL=330 Tj=25C --UI MAX | 100 50 mA IV MAX 150 100 VGT Vp=12V (DC) AL=330 Tj=25C Li-l-ty. | MAX 15 VGD VD=VDRM RL=3.3k2 Tj-125C | FI-M-IV | MIN 02 Vv tot VD=VDRM IG=500mA Tj=-25C 1-f1-1N-1V TYP 25 ps dig/dt = 3A/as IL Ig=1.2 Iq Tj=25C I-IN-1V TYP | 70 60 mA ll 200 180 ly * y= 500mA gate open Tj=25C MAX 100 80 mA Vm * | HM=60A_ tp= 380us Tj=25C MAX 18 v IDRM VpRM_ Rated Tj=25C MAX 0.01 mA IRRM VARM Rated Tj=125C MAX 6 dvidt * | Linear slope up to Vp=67%VpRM Tj=125C MIN 250 Vits gate open (dVidt)c * | (di/dt)c = 18A/ms Tj=125C MIN 10 Vius * For either polarity of electrode A2 voltage with reference to electrode A1. 25 M@ 7929237 0065191 54) Me k SGS-THOMSON SF siGroe_ecracnesBTA40 A/B ORDERING INFORMATION Package IT(RMS) Vornm / VRAM Sensitivity Specification A Vv A B BTA 40 400 x x (Insulated) 600 Xx x 700 xX xX 800 Xx x Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (di/di)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P tw) Tease (C) 60 oul 50 40 he 1Ciw |__fith= 0 crw 75 0.6" C/w J P (WwW) 60 180 | 50 { N Cy L Ol 180 == ap I a ert Ld 30 Q- so Le - 60 AS | | Oe 60 AA 20 Oi 30 aD L 10 | ZZ 0 5 110 15 20 25 30 35 40 Fig.3 : RMS on-state current versus case temperature. IrAms) fA) 50 40 30 \I 20 Q =180" \ 10 \ 120 Tease(C) 0 20 40 60 so 836100 140 AY, Mm 7929237? 0065192 446 a SGS-THOMSON > HNGRROE. SCT MES N\ SIN en Net 1.5" cw | Se" SSX J Sy L405 10+ 2 \\ e115 Tamb (C) \ 0 | | Lio 6 20 40 60 806 100 120 140 Fig.4 : relative variation of thermal impedance junction to case versus pulse duration. Zth(}-c)/Rthij-c) 1 0.1 0.01 1E-3 1E-2 1E-t 1E+0 1E+t 3/5BTA40 A/B Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. igti Ti} Ig T-25C] 2.6 -initj] th{Tj=25 C oN \ 1.6 PRS 1 Ih = | a Ht f pane yj 0.5 Tj ("C) 1 lL 1 } -40-80-20-10 0 10 20 30 40 60 60 70 BO GD 10D1t0 120180 Flg.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width t s< 10ms, and corresponding value of It. La (Ab. Ut (ae) 1000 Tj initial = 25 100 4 a7 SGS-THOMSON Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 300 TTTTTT re ee Tj Initial = 25C 250 200 = 150 Hy rm 100 ot Number of cycles 0 |p ELI ili | 1 10 100 1000 Fig.8 : On-state characteristics (maximum values). Vy (A) 1000 Ti initial 25C 100 Tj max 10 Vito = 1.12V Rt -0.012 a Vim (Vv) 1 2 3 4 6 > /MSROELECTRORICS ME 7929237 0065193 3145BTA40 A/B PACKAGE MECHANICAL DATA ADS Plastic REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 40.00 1.575 at | 29.90 | 30.30 | 1.177 | 1.193 a2 22.00 0.867 B 27.00 1.063 bi | 13.50 | 16.50 | 0.531 | 0.650 b2 24.00 0.945 c 14.00 0.551 ct 3.50 0.138 N2 c2 | 1.95 | 300 | 0.077 | 0.118 E 0.70 | 0.90 | 0.027 | 0.035 F 4.00 | 450 | 0.157 | 0.177 ! 11.20 | 13.60 | 0.441 | 0.535 L1 3.10 | 3.50 | 0.122 | 0.138 E u2 | 1.70 | 1.90 | 0.067 | 0.075 Nt 33 43 33 43 N2 28 38 28 38 Marking : type number Weight : 20 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of S@S- THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - Allrights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. &7 SGS:THOMSON 5 h MICRO SCTZORUGS me 7929237 0065194 250