TT OPTOELECTRONICS INFRARED EMITTERS MAX. [PEAK EMISSION| RISE Ve@ | WAVELENGTH MAX.| MAX. Ig tp =100mAIIf= 100mATYP. n. METERS I TYP. n. SEC.ITYP. n. SEC.) mW LEDSSC LEDS5B DETECTORS PHOTO TRANSISTORS SENSITIVITY (ma/mw/cm?) | BVcEQ| BVaco | Ip (nA) SWITCHING TYP. GE TYPE MIN. . MAX. | t, (uSEC.) te (uSEC.) 14G1 L14G2 L14G3 L14H1 L14H2 L14H3 L14H4 PHOTO DARLINGTONS 2N5777 2N5778 2N5779 2N5780 L14F1 L14F2 PHOTO SWITCHES Tye. CE(SAT) IRRADIANCE TO TRIGGER BLOCKING GE TYPE PAGE NO. (mw/em?) VOLTAGE L8 ok : 10 Lg 42 PHOTO TRANSISTOR OUTPUT ISOLATION CURRENT GE TYPE VOLTAGE (V,,) | TRANSFER . MIN. RATIO MIN. H11A1 2500 H11A2 1500 Hi1A3 2500 H11A4 1500 H11A5 1500 H11A520 5656 H11A550 5656 H11A5100 5656 H15A1 4000 Vems H15A2 4000 Vems 4N25 2500 4N25A 1775 Vams 4N26 1500 4N27 1500 4N28 500 4N35 2500 Vemus 4N36 1750 Vams 4N37 1050 Vams H74A1 1500 128 TYPICAL (uSEC.) TR UOUAAWWWWWWWNYNDN ~porpmnwryn Te AMAWWWWHRWWNHNN prmNnn VceE(saT) MAX.Light Detector Planar Silicon Photo Transistor =| L14G1-L14G2-L14G3 The General Electric L14G1 thru L14G3 are highly sensitive NPN Planar Silicon Photo- transistors. They are housed in a TO-18 style hermetically sealed package with lens cap. The L14G series is ideal for use in optoelectronic sensing applications where both high sensitivity and fast switching speeds are important parameters. Generally only the collector and emitter leads are used; a base lead is provided, however, to control sensitivity and gain of the device. 230 . NOTE!. 208 absolute maximum ratings: (25C. unless otherwise specified) LEpit me Zone gerween bore] SEATING PLANE. BETWEEN .250 AND END OF LEAD A MAX. Voltages -- Dark Characteristics OF (02) 1S HELO. oxo Collector to Emitter Voltage VcEo 45 volts (ts) NEASUREDINGACING wpe Collector to Base Voltage Vceo 45 volts BELOW THE SEATING PLANE Emitter to Base Voltage VeBo 5 volts ReLarive TOMAR: WiTH TAB. ql Currents METER OF THE ACTUAL DEVICE [indeean Light Current I 50 mA ARE REFERENCE UNLESS. Dissipations ca Power Dissipation (Ta = 25C)* Py 300 mW Power Dissipation (Tc = 25C)** Py 600 mW a Temperatures Junction Temperature Ty +150 C Storage Temperature Tstc 65 to+150 C *Derate 2.4 mW/G above 25C ambient **Derate 4.8 mW/C above 25C case electrical characteristics: (25C unless otherwise specified) L14G1 L14G2 L14G3 STATIC CHARACTERISTICS . MIN. MAX. MIN. MAX. MIN. MAX. Light Current (Vce = 5V, Ht = 10mW/cm?) IL 6 3 12 mA Dark Current (Vce = 10V, H = 0) Ip 100 100 100 nA Emitter-Base Breakdown Voltage (Ig = 100A, Ic = 0, H = 0) ViBR)EBO 5 5 5 Vv Collector-Base Breakdown Voltage (Ic = 100A, Ie = 0, H # 0) VipricBo 45 45 45 Vv Collector-Emitter Breakdown Voltage (Ic = 10mA, H #0 V(BR)CEO 45 45 45 Vv Saturation Voltage (Ic = 10mA, Ig = 1mA) V cetsaT) 0.4 0.4 0.4 Vv Turn-On Time (Vc_e = 10V, Ig = 2mA, ton 8 8 8 psec Turn-Off Time R, = 10022) tott 7 7 7 psec +H = Radiation Flux Density. Radiation source is on unfiltered NOTE: A GaAs source of 3.0 mW/cm2 is approximately equivalent tungsten filament bulb at 2870K color temperature. 1337 to a tungsten source, at 2870K, of 10 mW/cm2| L14G1-L14G2-L14G3 | 10 IT, -NORMALIZED LIGHT CURRENT 01 Ot ITL- NORMALIZED LIGHT CURRENT Tp NORMALIZED DARK CURRENT Ht 1OmW/em2 5mw/cm2 2mw/em? imW/cme NORMALIZED TO Vog25 Ht=10mWw/cm2 ( l io too Vog 7 COLLECTOR TO EMITTER VOLTAGE Light Current vs Collector to Emitter Voltage NORMALIZED TO Voce z5V Ht =tOmW/em2 T=25 ~50 0 50 too 150 T - TEMPERATURE - C Normalized Light Current vs Temperature | Pa A ~~ NORMALIZED TO Ip@2s5c VCEQ=I0 VOLTS Z i 25 50 75 100 125 150 T- TEMPERATURE C Dark Current vs Temperature TYPICAL ELECTRICAL CHARACTERISTICS 10. 0.1 NORMALIZED TO Vee =5V Ht =IOmw/cem2 IL -NORMALIZED LIGHT CURRENT Ol 0.1 t. 10 100 Ht = TOTAL IRRADIANCE IN mW/om@ Normalized Light Current vs Radiation 10 RLZIKD NORMALIZED TO Vce = '0 VOLTS IL=2mA ton = Loge *S psec RL=1002 ton and tofr-NORMALIZED TURN ON AND TURN OFF TIMES oO o- 1.0 10 [00 IL-OUTPUT CURRENT-~mA Switching Times vs Output Current 12 = | Ca-_ L LED6Se | Lise 10 o E Lf we & 8 J ~*~ a M N 6 s- NORMALIZED TO = LED 558 INPUT=IOMA = Veg =10 VOLTS S 4 Tp=100pA " T= 25C 2 0 55 35 15 5 25 45. 65 a5 5 T- TEMPERATURE~ C Normalized Light Current vs Temperature Both Emitter (LED55B ) and Detector (L14G) at Same Temperature 1338