AE G CORP sm ? TELEFUNKEN electronic Creative Technologies. Silicon Planar Diodes Application: Band switching in VHF-tuners Dimensions in mm gito e Cathoda Marking: By letters Absolute maximum ratings Reverse voltage Forward current Junction temperature Storage temperature range Maximum thermal resistance Junction ambient !=4 mm, T, = constant Characteristics 7, =25C Forward voltage I, =100 mA Reverse current V,=20V Diode capacitance f=100 MHz, V,=1V Vz=3V BA 282 BA 283 Differential forward resistance f=200 MHz, |.= 3mA BA282 BA 283 i=10mA BA 282 BA 283 Reverse impedance Vp =1V, f= 100 MHz T1.2/902.0588 E Min. 100 T-09-15 Standard glass case 54 A 2 DIN 41 880 JEDEC DO 35 Weight max. 0.15 g 35 100 150 55....4+150 350 Typ. Max. 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 mA K/w nA pF pF np dD 5 anyAE 6 CORP L7E > = oged4eh 0009716 & BA 282: BA 283 T-67-/S f=200 MHz = 25C f= 100 MHz 725C 0.1 1 10 mA lp