BSC080N03LS G OptiMOSTM3 Power-MOSFET Product Summary Features VDS 30 V * Fast switching MOSFET for SMPS RDS(on),max 8 mW * Optimized technology for DC/DC converters ID 53 A * Qualified according to JEDEC1) for target applications PG-TDSON-8 * N-channel; Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * Avalanche rated * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type Package Marking BSC080N03LS G PG-TDSON-8 080N03LS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 C 53 V GS=10 V, T C=100 C 33 V GS=4.5 V, T C=25 C 43 V GS=4.5 V, T C=100 C 27 V GS=10 V, T A=25 C, R thJA=50 K/W 2) 14 Unit A Pulsed drain current3) I D,pulse T C=25 C 212 Avalanche current, single pulse4) I AS T C=25 C 45 Avalanche energy, single pulse E AS I D=35 A, R GS=25 W 15 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/s, T j,max=150 C 6 kV/s Gate source voltage V GS 1) 20 V J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-17 BSC080N03LS G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 C 35 T A=25 C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 3.6 top - - 20 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 9.6 12 mW V GS=10 V, I D=30 A - 6.7 8 0.5 1.0 1.8 W 30 59 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.1 page 2 2013-05-17 BSC080N03LS G Parameter Values Symbol Conditions Unit min. typ. max. - 1300 1700 - 510 680 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 25 - Turn-on delay time t d(on) - 3.3 - Rise time tr - 2.8 - Turn-off delay time t d(off) - 15 - Fall time tf - 2.6 - Gate to source charge Q gs - 4.0 5.3 Gate charge at threshold Q g(th) - 1.9 2.6 Gate to drain charge Q gd - 1.8 3.0 Switching charge Q sw - 3.9 5.8 Gate charge total Qg - 7.5 10.0 Gate plateau voltage V plateau - 3.4 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 16 21 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 6.5 8.6 Output charge Q oss V DD=15 V, V GS=0 V - 13 17 - - 32 - - 212 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 C - 0.88 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/s - - 10 nC 4) 5) See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2013-05-17 BSC080N03LS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 40 60 50 30 ID [A] Ptot [W] 40 20 30 20 10 10 0 0 0 40 80 120 160 0 40 80 TC [C] 120 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 s 0.5 102 10 s 1 0.2 ZthJC [K/W] 100 s ID [A] 160 DC 101 0.1 0.05 0.02 1 ms 0.01 0.1 10 ms single pulse 100 10-1 0.01 10-1 100 101 102 VDS [V] Rev. 2.1 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-05-17 BSC080N03LS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 200 24 10 V 5V 3.2 V 20 150 RDS(on) [mW] 3.5 V ID [A] 4.5 V 100 16 12 4V 4.5 V 4V 5V 8 10 V 50 11.5 V 3.5 V 4 3.2 V 3V 2.8 V 0 0 1 2 0 3 0 10 20 VDS [V] 30 40 50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 120 140 120 100 100 80 gfs [S] ID [A] 80 60 60 40 40 20 150 C 20 25 C 0 0 0 1 2 3 4 5 VGS [V] Rev. 2.1 0 40 80 120 160 ID [A] page 5 2013-05-17 BSC080N03LS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 A 14 2.5 12 2 10 1.5 8 VGS(th) [V] RDS(on) [mW] 98 % typ 6 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 C 103 150 C, 98% Ciss 100 IF [A] C [pF] Coss 102 150 C Crss 25 C, 98% 10 101 100 1 0 10 20 30 VDS [V] Rev. 2.1 0.0 0.5 1.0 1.5 2.0 VSD [V] page 6 2013-05-17 BSC080N03LS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 6V 24 V 10 25 C 10 VGS [V] IAV [A] 8 100 C 6 4 125 C 2 1 0 1 10 100 1000 0 4 tAV [s] 8 12 16 20 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 VBR(DSS) [V] 30 28 26 V gs(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev. 2.1 page 7 2013-05-17 BSC080N03LS G Package Outline PG-TDSON-8-5 PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 2.1 page 8 2013-05-17 BSC080N03LS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 2.1 page 9 2013-05-17 BSC080N03LS G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. 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