DMG5802LFX
Document number: DS35009 Rev. 5 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) ID
T
A
= +25°C
24V 15m @ VGS = 4.5V 6.5A
20m @ VGS = 2.5V 5.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG5802LFX-7 W-DFN5020-6 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Top View
W-DFN5020-6
ESD PROTECTED TO 3kV
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Bottom View
S1S1G1
S2S2G2
D1/D2
Top View
Pin-Out
ME
YM
D1
S1
G1
D2
S2
G2
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
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November 2013
© Diodes Incorporated
DMG5802LFX
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 24 V
Gate-Source Voltage VGSS ±12 V
Continuous Drain Current (Note 5) VGS = 4.5V Steady
State
TA = +25°C
TA = +70°C ID 6.5
5.2 A
Continuous Drain Current (Note 5) VGS = 2.5V Steady
State
TA = +25°C
TA = +70°C ID 5.6
4.5 A
Pulsed Drain Current (Note 6) IDM 70 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) PD 0.98 W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RJA 126.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 24 — — V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 A VDS = 24V, VGS = 0V
Gate-Source Leakage IGSS — — ±10 A VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
0.6 0.9 1.5 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON)
— 11 15
m
VGS = 4.5V, ID = 6.5A
— 12 17 VGS = 4V, ID = 5.6A
— 13 18 VGS = 3.1V, ID = 5.6A
— 14 20 VGS = 2.5V, ID = 5.6A
Forward Transfer Admittance |Yfs| — 17 — S
VDS = 5V, ID = 6.5A
Diode Forward Voltage VSD — 0.6 0.9 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 1066.4 —
pF VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss — 132.0 —
Reverse Transfer Capacitance Crss — 127.1 —
Gate Resistance R
g
— 1.47 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge VGS = 4.5V Q
g
— 14.5 —
nC
VGS = 4.5V, VDS = 15V, ID = 5.8A
Total Gate Charge VGS = 10V Q
g
— 31.3 — VGS = 10V, VDS = 15V,
ID = 5.8A
Gate-Source Charge Q
g
s — 2.0 —
Gate-Drain Charge Q
g
d — 3.1 —
Turn-On Delay Time tD
(
on
)
— 3.69 — ns
VGS = 10V, VDS = 15V,
RL = 2.1, RG = 3
Turn-On Rise Time t
r
— 13.43 — ns
Turn-Off Delay Time tD
(
off
)
— 32.18 — ns
Turn-Off Fall Time tf — 22.45 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
3 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10V
GS
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
AI
E
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0.04
0.05
048121620
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
0.01
0.02
0.03
0.04
0 5 10 15 20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 10V
I = 20A
GS
D
V = 4.5V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE
DSON
V = 4.5V
I = 10A
GS
D
V = 10V
I = 20A
GS
D
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
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November 2013
© Diodes Incorporated
DMG5802LFX
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
4
8
12
16
20
I, S
E
E
(A)
S
T = 25°C
A
04812162024
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
f = 1MHz
C
iss
C
rss
C
oss
04 812162024
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
10,000
100,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
A
E-S
E V
L
A
E (V)
GS
V = 15V
I = 7A
DS
D
0.01
0.1
1
10
100
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
-I , D
AIN
EN
(A)
D
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
P = 10ms
W
R
Limited
DS(on)
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
5 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
0.001 0.01 0.1 1 10 100 1,000
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) *
JA
R
R = 122°C/W
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
W-DFN5020-6
Dim Min Max Typ
A 0.75 0.85 0.80
A1 0 0.05 0.02
A3   0.15
b 0.20 0.30 0.25
D 1.90 2.10 2.00
D2 1.40 1.60 1.50
e   0.50
E 4.90 5.10 5.00
E2 2.80 3.00 2.90
L 0.35 0.65 0.50
Z   0.375
All Dimensions in mm
Dimensions Value (in mm)
C 0.50
G 0.35
X 0.35
X1 0.90
X2 1.80
Y 0.70
Y2 1.60
Y3 3.20
e
D
A3
A1
A
E
D2
E2
L
Z b
Pin 1 ID
Y3
X2
X1 Y2
XC
Y
G
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
6 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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