SEMICONDUCTOR KRC110S~KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E B L L *With Built-in Bias Resistors. D *Simplify Circuit Design. 2 H A EQUIVALENT CIRCUIT 3 G *Reduce a Quantity of Parts and Manufacturing Process. 1 Q P P J N C C K R1 B DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 Emitter-Base Voltage VEBO IC Collector Current CHARACTERISTIC SYMBOL RATING UNIT Collector Power Dissipation PC 200 mW V Junction Temperature Tj 150 5 V Storage Temperature Range Tstg -55150 100 mA ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz KRC110S 3.29 4.7 6.11 KRC111S 7 10 13 70 100 130 KRC113S 15.4 22 28.6 KRC114S 32.9 47 61.1 VCE(sat) Collector-Emitter Saturation Voltage fT * Transition Frequency KRC112S Input Resistor R1 k Note : * Characteristic of Transistor Only. Marking Lot No. MARK SPEC TYPE KRC110S KRC111S KRC112S KRC113S KRC114S MARK NK NM NN NO NP 2008. 10. 29 Revision No : 3 Type Name 1/4 KRC110S~KRC114S ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Rise Time SYMBOL MIN. TYP. MAX. KRC110S - 0.025 - KRC111S - 0.03 - - 0.3 - KRC113S - 0.06 - KRC114S - 0.11 - KRC110S - 3.0 - VO=5V - 2.0 - VIN=5V - 6.0 - RL=1k - 4.0 - KRC114S - 5.0 - KRC110S - 0.2 - KRC111S - 0.12 - - 2.0 - KRC113S - 0.9 - KRC114S - 1.4 - KRC112S tr KRC111S Switching Storage Time Time KRC112S tstg KRC113S Fall Time 2008. 10. 29 KRC112S Revision No : 3 TEST CONDITION tf UNIT S 2/4 KRC110S~KRC114S h FE - I C V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) KRC110S DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 0.3 1 3 10 30 100 KRC110S 2 IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) KRC111S DC CURRENT GAIN h FE 1k Ta=100 C Ta=25 C Ta=-25 C 50 30 VCE =5V 10 0.1 0.3 1 3 10 30 100 KRC111S IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) KRC112S DC CURRENT GAIN h FE 1k Ta=100 C Ta=25 C Ta=-25 C 50 30 VCE =5V 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 2008. 10. 29 3 10 30 100 VCE(sat) - I C 2k 10 0.1 1 COLLECTOR CURRENT I C (mA) h FE - I C 100 100 2 COLLECTOR CURRENT I C (mA) 500 300 30 VCE(sat) - I C 2k 100 10 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 500 300 3 Revision No : 3 100 KRC112S 2 I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 3/4 KRC110S~KRC114S h FE - I C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) KRC113S DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 0.3 1 3 10 30 KRC113S 2 I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 100 COLLECTOR CURRENT I C (mA) 0.3 KRC114S COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 30 100 KRC114S 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 V CE =5V 1 3 10 COLLECTOR CURRENT I C (mA) 2008. 10. 29 10 V CE(sat) - I C 2k 0.3 3 COLLECTOR CURRENT I C (mA) h FE - I C 10 0.1 1 Revision No : 3 30 100 2 I C/I B=20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 4/4