JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR NPN TO--126 FEATURES Power dissipation PCM : 1.25 WTamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1.BASE 2.COLLECTOR 3.EMITTER unless Test 123 otherwise specified conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1000A IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000A IC=0 9 V mA IB=0 Collector cut-off current ICBO VCB= 700 V IE=0 1000 A Collector cut-off current ICEO VCE= 400 V IB=0 500 A Emitter cut-off current IEBO VEB= 9 V IC=0 1000 A HFE1 VCE= 2 V, IC= 0.5 A 8 40 HFE2 VCE= 10 V, IC= 0.5 mA 5 Collector-emitter saturation voltage VCE(sat) IC=1000m A,IB= 250 m A 1 V Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250m A 1.2 V Base-emitter voltage VBE IE= 2000 mA 3 V Transition frequency fT VCE=10V,Ic=100mA f =1MHz Fall time tf IC=1A, Storage time ts VCC=100V DC current gain 5 MHz IB1=-IB2=0.2A 0.5 s 2.5 s CLASSIFICATION OF HFE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 TO-126 PACKAGE OUTLINE DIMENSIONS D A A1 L1 E P L b1 b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 2.290TYP e 0.090TYP e1 4.480 4.680 0.176 0.184 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 3.000 3.200 0.118 0.126