JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM : 1.25 W（Tamb=25℃）
Collector current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000μA， IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA， IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1000μA， IC=0 9 V
Collector cut-off current I
CBO VCB= 700 V， I
E=0 1000 µA
Collector cut-off current I
CEO VCE= 400 V， I
B=0 500 µA
Emitter cut-off current I
EBO VEB= 9 V， I
C=0 1000 µA
HFE（1） VCE= 2 V, IC= 0.5 A 8 40
DC current gain HFE（2） VCE= 10 V, IC= 0.5 mA 5
Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA
1 V
Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA
1.2 V
Base-emitter voltage VBE IE= 2000 mA 3 V
Transition frequency fT VCE=10V,Ic=100mA
f =1MHz 5 MHz
Fall time tf 0.5 µs
Storage time ts
IC=1A, I
B1=-IB2=0.2A
VCC=100V 2.5 µs
CLASSIFICATION OF H
FE(1)
Rank
Range 8-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO—126
1.BASE
2.COLLECTOR
3.EMITTER
D
C
A
A1
b
b1
E
P
L
L1
e
e1
TO-126 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
D
E
e
e1
L
L1
P
φ
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
4.480
15.300
2.100
3.900
3.000
Max
2.900
1.500
0.860
1.370
0.600
7.800
11.000
4.680
15.700
2.300
4.100
3.200
Min
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.176
0.602
0.083
0.154
0.118
Max
0.114
0.059
0.034
0.054
0.024
0.307
0.433
0.184
0.618
0.091
0.161
0.126
Dimensions In Millimeters Dimensions In Inches
0.090TYP
2.290TYP
φ
