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M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Active Doubler
7.5-22.5/15.0-45.0 GHz
XX1000-QT
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Features
+18 dBm Output Power
-20 dBc Fundamental Leakage
3x3 mm QFN Package
100% RF, DC and Output Power Testing
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 7.5-22.5/15.0-45.0 GHz SMD
active doubler delivers + 18 dBm of output power.
The device combines an active doubler with an
output buffer amplifier that delivers constant power
over a range of input powers. The device has
excellent rejection of the fundamental and harmonic
products and requires a single positive bias supply.
This device uses M/A-COM Tech's 0.15 GaAs
pHEMT device model technology to ensure high
reliability and uniformity. The device comes in a low-
cost 3x3mm QFN Surface Mount Plastic Package
offering excellent RF and thermal properties and is
RoHS compliant. This device is well suited for Point-
to-Point Radio, Microwave, LMDS, SATCOM and
VSAT applications.
Ordering Information
Part Number Package
XX1000-QT-0G00 bulk quantity
XX1000-QT-0G0T tape and reel
XX1000-QT-EV1 evaluation module
Functional Block Diagram
Pin Configuration
Pin No. Function Pin No. Function
3 RF In 13 VD2
5 VG1 15 VD1
6 VSS 2,4,9,11 Ground
7 VG21 1,8,12,14,
16 Not Connected
10 RF Out
Absolute Maximum Ratings
Parameter Absolute Max.
Supply Voltage (Vd) +6.0 VDC
Supply Voltage (Vss) -6.0 VDC
Supply Current (Id) 300 mA
Supply Current (Iss) 60 mA
Gate Bias Voltage (Vg) -0.4 VDC
Input Power (RF Pin) +15.0 dBm
Storage Temperature (Tstg) -65 °C to +165 °C
Operating Temperature (Ta) -55 °C to MTTF
Table1
Channel Temperature (Tch) MTTF Table1
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize
lifetime.
1. VG2 can be used for current regulating VD2 or VG2 can be set
to GND withVD2 self-biasing at approximately 140mA.