PROVISIONAL ISSUE A - AUGUST 2001
ZXMN3A04DN8
3
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 0.5 µAVDS=30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1.0 V ID=250µA, VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 0.02
0.03 Ω
ΩVGS=10V, ID=12.6A
VGS=4.5V, ID=10.6A
Forward Transconductance (3) gfs 17.5 S VDS=15V,ID=6A
DYNAMIC (3)
Input Capacitance Ciss 1800 pF VDS=25V, VGS=0V,
f=1MHz
Output Capacitance Coss 289 pF
Reverse Transfer Capacitance Crss 178 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 5.5 ns
VDD =15V, ID=6A
RG=6.0Ω,V
GS=10V
Rise Time tr8.7 ns
Turn-Off Delay Time td(off) 33 ns
Fall Time tf8.5 ns
Gate Charge Qg19.4 nC VDS=15V,VGS=5V,
ID=3.5A
Total Gate Charge Qg35.7 nC VDS=15V,VGS=10V,
ID=3.5A
Gate-Source Charge Qgs 5.5 nC
Gate-Drain Charge Qgd 7.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=6A,
VGS=0V
Reverse Recovery Time (3) trr 20.5 ns TJ=25°C, IF=6A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 41.5 nC
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.