TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88405 www.vishay.com
06-May-02 1
Surface Mount Automotive
T ransient Voltage Suppressors
Breakdown Voltage 6.8 to 43.0V
Peak Pulse Power 400W
Maximum Ratings and Thermal Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak power dissipation with a 10/1000µs waveform
(1)(2) (Fig. 3) PPPM Minimum 400 W
Peak power pulse current with a
10/1000µs wavefor m(1) (Fig. 1) IPPM See Next Table A
Peak forward surge current 8.3ms single half sine-wave(3) IFSM 40 A
Maximum instantaneous forward voltage at 25A(3) VF3.5 V
Operating junction and storage temperature range TJ, TSTG – 65 to +185 °C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 0.5mm) copper pads attached to each ter minal
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
Available in uni-directional only
DO-214AC (SMA)
Dimensions in inches
and (millimeters)
Patented*
Mechanical Data
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position: Any
Weight: 0.002 oz., 0.064 g
Packaging codes/options:
5A/7.5K per 13" Reel (12mm Tape), 90K/box
11/1.8K per 7" Reel (12mm Tape), 36K/box
0.060 MIN
(1.52 MIN)
0.050 MIN
(1.27 MIN) 0.220 REF
(5.58)
0.094 MAX
(2.38 MAX)
Mounting Pad Layout
*Patent #’s
4,980,315
5,166,769
5,278,094
Features
• Plastic package has Underwr iters Laboratory
Flammability Classification 94V-0
• Ideal for automated placement
• Low profile package
• Built-in strain relief
• Exclusive patented PAR®oxide passivated
chip construction
• 400W peak pulse power capability with a
10/1000ms wavefor m, repetition rate
(duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Ver y fast response time
• For devices with V(BR) ≥10V IDare typically
less than 1.0mA at TA = 150°C
• Designed for under the hood surface mount
applications
• High temperature soldering:
250°C/10 seconds at terminals
TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88405
206-May-02
Electrical Characteristics(TA= 25°C unless otherwise noted)
TJ= 150°C Maximum
Breakdown Voltage Maximum Maximum Peak Pulse Maximum
V(BR)(1) at ITReverse Reverse Surge Clamping
Device (V) Test Stand-off Leakage Leakage Current Voltage
Marking Current Voltage at VWM at VWM IPPM (Note 2) at IPPM
Device Code Min. Max. IT (mA) VWM (Volts) IR (µA) ID (µA) (Amps) Vc (Volts)
TPSMA6.8 ADP 6.12 7.48 10 5.50 300 1000 37.0 10.8
TPSMA6.8A AEP 6.45 7.14 10 5.80 300 1000 38.1 10.5
TPSMA7.5 AFP 6.75 8.25 10 6.05 150 500 34.2 11.7
TPSMA7.5A AGP 7.13 7.88 10 6.40 150 500 35.4 11.3
TPSMA8.2 AHP 7.38 9.02 10 6.63 50 200 32.0 12.5
TPSMA8.2A AKP 7.79 8.61 10 7.02 50 200 33.1 12.1
TPSMA9.1 ALP 8.19 10.00 1.0 7.37 10 50 29.0 13.8
TPSMA9.1A AMP 8.65 9.55 1.0 7.78 10 50 29.9 13.
TPSMA10 ANP 9.00 11.00 1.0 8.10 5.0 20 26.7 15.0
TPSMA10A APP 9.50 10.50 1.0 8.65 5.0 20 27.6 14.5
TPSMA11 AQP 9.90 12.10 1.0 8.92 1.0 5.0 24.7 16.2
TPSMA11A ARP 10.50 11.60 1.0 9.40 1.0 5.0 25.6 15.6
TPSMA12 ASP 10.80 13.20 1.0 9.72 1.0 5.0 23.1 17.3
TPSMA12A ATP 11.40 12.60 1.0 10.20 1.0 5.0 24.0 16.7
TPSMA13 AUP 11.70 14.30 1.0 10.50 1.0 5.0 21.1 19.0
TPSMA13A AVP 12.40 13.70 1.0 11.10 1.0 5.0 22.0 18.2
TPSMA15 AWP 13.50 16.30 1.0 12.10 1.0 5.0 18.2 22.0
TPSMA15A AXP 14.30 15.80 1.0 12.80 1.0 5.0 18.9 21.2
TPSMA16 AYP 14.40 17.60 1.0 12.90 1.0 5.0 17.0 23.5
TPSMA16A AZP 15.20 16.80 1.0 13.60 1.0 5.0 17.8 22
TPSMA18 BDP 16.20 19.80 1.0 14.50 1.0 5.0 15.1 26.5
TPSMA18A BEP 17.10 18.90 1.0 15.30 1.0 5.0 15.9 25.5
TPSMA20 BFP 18.00 22.00 1.0 16.20 1.0 5.0 13.7 29.1
TPSMA20A BGP 19.00 21.00 1.0 17.10 1.0 5.0 14.4 27.7
TPSMA22 BHP 19.80 24.20 1.0 17.80 1.0 5.0 12.5 31.9
TPSMA22A BKP 20.90 23.10 1.0 18.80 1.0 5.0 13.1 30.6
TPSMA24 BLP 21.60 26.40 1.0 19.40 1.0 5.0 11.5 34.7
TPSMA24A BMP 22.80 25.20 1.0 20.50 1.0 5.0 12.0 33.2
TPSMA27 BNP 24.30 29.70 1.0 21.80 1.0 5.0 10.2 39.1
TPSMA27A BPP 25.70 28.40 1.0 23.10 1.0 5.0 10.7 37.5
TPSMA30 BQP 27.00 33.00 1.0 24.30 1.0 5.0 9.2 43.5
TPSMA30A BRP 28.50 31.50 1.0 25.60 1.0 5.0 9.7 41.4
TPSMA33 BSP 29.70 36.30 1.0 26.80 1.0 5.0 8.4 47.
TPSMA33A BTP 31.40 34.70 1.0 28.20 1.0 5.0 8.8 45.7
TPSMA36 BUP 32.40 39.60 1.0 29.10 1.0 5.0 7.7 52.0
TPSMA36A BVP 34.20 37.80 1.0 30.80 1.0 5.0 8.0 49.9
TPSMA39 BWP 35.10 42.90 1.0 31.60 1.0 5.0 7.1 56.4
TPSMA39A BXP 37.10 41.00 1.0 33.30 1.0 5.0 7.4 53.9
TPSMA43 BYP 38.70 47.30 1.0 34.80 1.0 5.0 6.5 61.9
TPSMA43A BZP 40.90 45.20 1.0 36.80 1.0 5.0 6.7 59.3
Notes:
(1) V(BR) measured after ITapplied for 300µs, IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88405 www.vishay.com
06-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
0.1
1.0
10
100
0.1µs 1.0µs10µs 100µs 1.0ms 10ms
PPPM, Peak Power (KW)
CJ, Junction Capacitance, pF
V(BR), Breakdown Voltage (V)
10
100
1,000
10,000
1 10 100 200
td, Pulse Width, sec.
Fig. 4 – Typical Junction Capacitance
Fig. 2 – Pulse Derating Curve
0
25
50
75
100
050 100 150 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
TA, Ambient Temperature (°C)
TJ = 25°C
f = 1 MHz
Vsig = 50mVp-p
VR measured
at zero bias
VR measured
at stand-off
voltage, VWM
TA = 25°C
Non-repetitive pulse
waveform shown in Fig. 3
0.2 x 0.2" (5.0 x 5.0mm)
copper pad areas
200
100
Number of Cycles at 60 Hz
IFSM, Peak Forward Surge Current (A)
10
50
110505 100
TJ = TJ max
8.3ms single half sine-wave
(JEDEC method)
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
0
50
100
150
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse W avef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value — IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t — Time (ms)
