& PLASTIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR QSD122/123/124 a .205 (5.21) The QSD12xX is a silicon phototransistor encapsulated in .185 (4.70) an infrared transparent, black T-13%4 package. REFERENCE > | SURFACE 320(8.13) 290 (7.37) N | = Tight production distribution. Steel lead frames for improved reliability in solder mounting | 040 ah 02) NOM = Good optical-to-mechnical alignment. .800 (20.3) MIN = Narrow reception angle. EMITTER Plastic package is infrared transparent black to attenuate visible light. COLLECTOR @ Mechanically and spectrally matched to the QED123/ 222 LED. = Black plastic body allows easy recognition from LED. .050 (1. J inom | NOM | .100 (2.54) NOM \ aod, 240 (6.10) 215 ye 46) 025 (.640) 7 15( 915 (380) PLES ST2144 NOTES: 1. DIMENSIONS ARE IN INCHES (mm). 2. TOLERANCE IS +.010 (.25) UNLESS OTHERWISE SPECIFIED. 3. FLAT DENOTES EMITTER.e PLASTIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR Storage Temperature ..00 2... eee eee eee eee 40C to + 100C Operating Temperature 0.0... eee 40C to + 100C Soldering: Lead Temperature (Iron) ..6. 60 eee cece eve eee bet ene tect e bbb bee e es ce 240C for 5 sec. #44 Lead Temperature (FIOW) 2.0.6... cece ett eect e ttt b nner rr ee 260C for 10 sec, 22% Collector-Emitter Breakdown Voltage oo... 60.0 o eee eee c cece tec ec ee tetettetrtittet eset ei tere rp. 30 Volts Emitter-Collector Breakdown Voltage 00... eee cece e ccc ccee tee vattatet este eetei iene ieee eee 5.0 Volts Power Dissipation oo... eee e eee cece cent eset etter tert ttttt bitter eee 100 mw" PARAMETER " SYMBOL TEST CONDITIONS Collector-Emitter Breakdown BV ceo 30 _ Vv Ik =1.0mA Emitter-Collector Breakdown BV eco 5.0 _ Vv le = 100 pA Collector-Emitter Leakage leeo 100 nA Vor = 10V Reception Angle at /2 Sensitivity 9 _ +12 _ Degrees On-State Collector Current QSD1 22 leven) 1.0 6.0 mA Ee = 0.5 mW/cm, Vee = 5Ve On-State Collector Current QSD123 leyony 4.0 16.0 mA Ee = 0.5 mWicm?, Voz = 5V On-State Collector Current QSD124 locony 6.0 mA Ee = 0.5 mW/cm, Va. = 5Ve Rise Time t, 7.0 us I; = .2MA, Veco = 5 V, R, = 1000 Fall Time t, _ 7.0 Bs Ib = .2 MA, Veo = 5 V, R, = 1000 Saturation Voltage Voegan _ 0.40 Vv I, = 0.50 mA, Ee = 0.5 mW/cm?"" 1, Derate power dissipation linearly 1.33 2, RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip ie (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. Light source is an AlGaAs LED emitting light at a peak wavelength of 880 nm. mW above 25C.