BAS70-07W Silicon Schottky Diode 3 * General-purpose diode for high-speed switching 4 * Circuit protection * Voltage clamping * High-level detecting and mixing 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAS70-07W 77s 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A1186 Package Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t< 100s) I FSM 100 Total power dissipation, T S 91 C Ptot 250 mW Junction temperature Tj 150 C Operating temperature range T op - 55 ...+150 Storage temperature T stg - 55 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA 285 RthJS 145 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -26-1998 BAS70-07W Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 70 - - - - DC characteristics V(BR) Breakdown voltage V I (BR) = 10 A IR Reverse current A VR = 50 V 0.1 VR = 70 V 10 VF Forward voltage V I F = 1 mA 300 375 410 I F = 10 mA 600 705 750 I F = 15 mA 750 880 1000 CT - 1.5 2 pF - - 100 ps rf - 34 - Ls - 2 - nH AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance I F = 10 mA, f = 10 kHz Series inductance Semiconductor Group Semiconductor Group 22 Ma 1998-11-01 -26-1998 BAS70-07W Forward current IF = f (TA*;TS) Rectifier voltage Vout = f (Vin) * Package mounted on epoxy f = 900 MHz RL = parameter in k 10 4 100 mV mA 10 3 80 IF Vout 10 70 2 TS 60 10 1 TA 50 1000 500 200 100 50 20 10 0 40 10 -1 30 20 RL=10 10 -2 10 0 0 20 40 60 80 120 C 100 10 -3 0 10 150 10 1 10 2 10 3 mV TA,TS Vin Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC K/W RthJS 10 2 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 - 33 Ma 1998-11-01 -26-1998 BAS70-07W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter TA = Parameter 10 2 F BAS 70W/BAS 170W EHB00042 10 2 mA R BAS 70W/BAS 170W EHB00043 A TA = 150 C 10 1 10 1 85 C 10 0 10 0 TA = -40 C 25 C 85 C 150 C 10 -1 10 -1 25 C 10 -2 10 -2 0.0 0.5 1.0 V 10 -3 1.5 0 20 40 60 Diode capacitance CT = f (V R) f = 1MHz CT 80 VR VF 2.0 V Differential forward resistance rf = f (IF) f = 10 kHz BAS 70W/BAS 170W EHB00044 10 3 pF rf BAS 70W/BAS 170W EHB00045 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 10 0 0.1 80 Semiconductor Group Semiconductor Group 1 10 mA 100 F VR 44 Ma 1998-11-01 -26-1998