VIN VOUT
1x GAIN
VDC
VDD
GND
GND
DIAPHRAGM
AIRGAP
BACKPLATE
ELECTRET
CONNECTOR
LMV1031
x
x
x
x
x
x
x
x
xxx
x
xx
x
IC
VCC
VOUT
LMV1031
www.ti.com
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
LMV1031-20 Amplifier for Internal 3-Wire Analog Microphones and External Preamplifier
Check for Samples: LMV1031
1FEATURES DESCRIPTION
The LMV1031 audio amplifier is an ideal replacement
2• (Typical LMV1031-20, 2V Supply; Unless for the JFET preamplifier that is currently used in the
Otherwise Noted) electret microphones. The LMV1031 is optimized for
• Signal to Noise Ratio 62 dB applications that require extended battery life, such
• Output Voltage Noise (A-Weighted) −86 dBV as Bluetooth communication links. The supply current
for the LMV1031 is only 72 μA. This is a dramatic
• Low Supply Current 72 μAreduction from that required for a JFET equipped
• Supply Voltage 2V to 5V microphone. The LMV1031, with its separate output
• Input Impedance >100 MΩand supply pins, offers a higher PSRR and eliminates
the need for additional external components.
• Max Input Signal 108 mVPP
• Output Voltage 1.09V The LMV1031 is ensured to operate from 2V to 5V
supply voltage over the full temperature range, has a
• Temperature Range −40°C to 85°C fixed voltage gain of 20 dB and enhanced SNR
• Large Dome 4-Bump DSBGA Package with performance. The LMV1031 is optimized for an
Improved Adhesion Technology output biasing of 1.09V.
The LMV1031 has less than 200Ωof output
APPLICATIONS impedance over the full audio bandwidth. The gain
• Mobile Communications - Bluetooth response of the LMV1031 is flat within the audio band
and is stable over the temperature range.
• Accessory Microphone Products
• Cellular Phones The LMV1031 is available in a large dome 4-bump
ultra thin DSBGA package that can easily fit on the
• PDAs PCB inside the miniature microphone metal can
(package). This package is designed for microphone
PCBs requiring 1 kg adhesion criteria.
Block Diagram Electret Microphone
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2005–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LMV1031
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Human Body Model 2500V
ESD Tolerance(3) Machine Model 250V
Supply Voltage VDD - GND 5.5V
Storage Temperature Range −65°C to 150°C
Junction Temperature(4) 150°C max
Mounting Temperature Infrared or Convection (20 sec.) 235°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specified specifications and the test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) The human body model (HBM) is 1.5 kΩin series with 100 pF. The machine model is 0Ωin series with 200 pF.
(4) The maximum power dissipation is a function of TJ(MAX) ,θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD= (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly onto a PC board.
Operating Ratings(1)
Supply Voltage 2V to 5V
Temperature Range −40°C to +85°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specified specifications and the test
conditions, see the Electrical Characteristics.
2V and 5V Electrical Characteristics(1)
Unless otherwise specified, all limits are specified for TJ= 25°C and VDD = 2V and 5V. Boldface limits apply at the
temperature extremes.
Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units
IDD 72 90
Supply Current VIN = GND μA
100
SNR Signal to Noise Ratio f = 1 kHz, VIN = 18 mVPP 62 dB
THD Total Harmonic Distortion f = 1 kHz, VIN = 18 mVPP 0.18 %
enOutput Noise A-Weighted −86 dBV
AV19.18 20.1 20.90
Gain f = 1 kHz, VIN = 18 mVPP dB
19.00 21.00
fLOW Lower −3 dB Roll Off Frequency RSOURCE = 50Ω, VIN = 18 mVPP 72 Hz
fHIGH Upper −3 dB Roll Off Frequency RSOURCE = 50Ω, VIN = 18 mVPP 52 kHz
VIN Max Input Signal f = 1 kHz and THD+N < 1% 108 mVPP
ZIN Input Impedance >100 MΩ
CIN Input Capacitance 2 pF
VOUT 890 1090 1310
Output Voltage VIN = GND mV
875 1325
ROOutput Impedance f = 1 kHz <200 Ω
PSRR Power Supply Rejection Ratio 2V < VDD < 5V 56 dB
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ= TA. No ensuring of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ> TA.
(2) All limits are specified by design or statistical analysis.
(3) Typical values represent the most likely parametric norm at the time of characterization.
2Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMV1031
A1
GND
B2
VCC
B1
INPUT
X
A2
OUTPUT
LMV1031
www.ti.com
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
Connection Diagram
Note:
- Pin numbers are referenced to package marking text orientation.
- The actual physical placement of the package marking will vary slightly from part to part. The package will designate
the date code and will vary considerably. Package marking does not correlate to device type in any way.
Figure 1. 4-Bump Ultra Thin DSBGA
Top View
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LMV1031
100 1k 10k 100k 1M
FREQUENCY (Hz)
10
GAIN (dB)
0
5
10
15
20
25
-300
-200
-100
0
100
200
PHASE (o)
GAIN
PHASE
LMV1031
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
www.ti.com
Typical Performance Characteristics
Unless otherwise specified, VS= 2V, single supply, TA= 25°C
Supply Current vs. Supply Voltage Output Voltage vs. Supply Voltage
Figure 2. Figure 3.
Closed Loop Gain and Phase
Gain vs. Supply Voltage vs. Frequency
Figure 4. Figure 5.
Power Supply Rejection Ratio Total Harmonic Distortion
vs. Frequency vs. Frequency
Figure 6. Figure 7.
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Product Folder Links: LMV1031
LMV1031
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SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
Typical Performance Characteristics (continued)
Unless otherwise specified, VS= 2V, single supply, TA= 25°C
Total Harmonic Distortion Output Voltage Noise
vs. Input Voltage vs. Frequency
Figure 8. Figure 9.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: LMV1031
JFET
Microphone
VDD
VIN
GND
VDD
VOUT
LMV1031
VDD
2.2 k:
2.2 PFVOUT
GND
GND
DIAPHRAGM
AIRGAP
BACKPLATE
ELECTRET
CONNECTOR
LMV1031
x
x
x
x
x
x
x
x
xxx
x
xx
x
IC
VCC
VOUT
LMV1031
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
www.ti.com
APPLICATION SECTION
LOW CURRENT
The LMV1031 has a low supply current which allows for a longer battery life. The low supply current of 72 μA
makes this amplifier optimal for microphone applications which need to be always on.
BUILT-IN GAIN
The LMV1031 is offered in the space saving small DSBGA package which fits perfectly into the metal can of a
microphone. This allows the LMV1031 to be placed on the PCB inside the microphone.
The bottom side of the PCB has the pins that connect the supply voltage to the amplifier and make the output
available. The input of the amplifier is connected to the microphone via the PCB.
Figure 10. Built-in Gain
EXTERNAL PREAMPLIFIER APPLICATION
The LMV1031 can also be used outside of an ECM as a space saving external preamplifier. In this application,
the LMV1031 follows a phantom biased JFET microphone in the circuit. This is shown in Figure 11. The input of
the LMV1031 is connected to the microphone via a 2.2 µF capacitor. The advantages of this circuit over one with
only a JFET microphone are the additional gain and the high pass filter supplied by the LMV1031. The high pass
filter makes the output signal more robust and less sensitive to low frequency disturbances. In this configuration
the LMV1031 should be placed as close as possible to the microphone.
Figure 11. LMV1031 as external preamplifier
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Product Folder Links: LMV1031
-2.0 -1.0 0.0 1.0 2.0 3.0 4.0
OUTPUT CURRENT (mA)
0
5
10
15
20
25
GAIN (dB)
GAIN
NEGATIVE = SOURCING CURRENT
-0.5
0.0
0.5
1.0
1.5
2.0
OUTPUT VOLTAGE (V)
VOUT
POSITIVE = SINKING CURRENT
10 100 1k 10k 100k
FREQUENCY (Hz)
-70
-60
-50
-40
-30
-20
-10
0
10
dBV
LMV1031
www.ti.com
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
A-WEIGHTED FILTER
The human ear has a frequency range from 20 Hz to about 20 kHz. Within this range the sensitivity of the human
ear is not equal for each frequency. To approach the hearing response weighting filters are introduced. One of
those filters is the A-weighted filter.
Figure 12. A-Weighted Filter
The A-weighted filter is commonly used in signal-to-noise ratio measurements, where sound is compared to
device noise. It improves the correlation of the measured data to the signal-to-noise ratio perceived by the
human ear.
OUTPUT CURRENT
The LMV1031 is designed for driving high ohmic loads with several milli amperes of output current. Figure 13
shows the gain performance of the LMV1031 versus the sinking and sourcing current. The gain remains constant
within the shown output current range. This sets the operating range of the LMV1031 with respect to the output
current.
Figure 13. Performance vs. Output Current
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: LMV1031
ABSOLUTE
SOUND
PRESSURE
[dBPa]
-94dB SENSITIVITY
[dBV/Pa]
SOUND
PRESSURE
[dB SPL]
VOLTAGE
[dBV]
A-WEIGHTED FILTER
5pF
LMV1031
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
www.ti.com
MEASURING NOISE AND SNR
The overall noise of the LMV1031 is measured within the frequency band from 10 Hz to 22 kHz using an A-
weighted filter. The input of the LMV1031 is connected to ground with a 5 pF capacitor.
Figure 14. Noise Measurement Setup
The signal-to-noise ratio (SNR) is measured with a 1 kHz input signal of 18 mVPP using an A-weighted filter. This
represents a sound pressure level of 94 dB with a standard ECM sensitivity. No input capacitor is connected.
SOUND PRESSURE LEVEL
The volume of sound applied to a microphone is commonly stated as the pressure level with respect to the
threshold of hearing of the human ear. This sound pressure level (SPL) in decibels is defined by:
Sound pressure level (dB) = 20 log Pm/PO
where
• Pmis the measured sound pressure
• POis the threshold of hearing (20 µPa)
In order to be able to calculate the resulting output voltage of the microphone for a given SPL, the sound
pressure in dB SPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure
level in decibels which is referred to 1 Pascal (Pa).
The conversion is given by:
dBPa = dB SPL + 20*log 20 µPa
dBPa = dB SPL - 94 dB
Translation from absolute sound pressure level to a voltage is specified by the sensitivity of the microphone. A
conventional microphone has a sensitivity of −44 dBV/Pa.
Figure 15. dB SPL to dBV Conversion
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Product Folder Links: LMV1031
LMV1031
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SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
Example: Busy traffic is 70 dB
VOUT = 70 −94 −44 = −68 dBV
This is equivalent to 1.13 mVPP
Since the LMV1031-20 has a gain of 10 times (20 dB) over the JFET, the output voltage of the microphone is
11.3 mVPP. By replacing the JFET with the LMV1031-20, the sensitivity of the microphone is −24 dBV/Pa (−44 +
20).
LOW FREQUENCY CUT-OFF FILTER
The LMV1031 has a low cut-off filter on the output of the microphone, to reduce low frequency noises, such as
wind and vibration. This also helps to reduce the proximity effect in directional microphones. This effect occurs
when the sound source is very close to the microphone. The lower frequencies are amplified which gives a bass
sound. This amplification can cause an overload, which results in a distortion of the signal.
Figure 16. Gain vs. Frequency
The LMV1031 is optimized to be used in audio band applications. As shown in Figure 16, the LMV1031 provides
a flat gain response within the audio band and offers excellent temperature stability.
ADVANTAGE OF THREE PINS
When implemented in an Electret Condenser Microphone (ECM) the LMV1031 adds the advantages of a three
pin configuration. The third pin provides a low supply current, higher PSRR, and eliminates the need for
additional external components.
It is well known that cell phone microphones are sensitive to noise pick-up. A conventional JFET circuit is
sensitive to noise pick-up because of its high output impedance, which is usually around 2.2 kΩ. The LMV1031 is
less sensitive to noise pick-up because it provides separate output and supply pins. Using separate pins greatly
reduces the output impedance.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: LMV1031
LMV1031
SNOSAP8B –SEPTEMBER 2005–REVISED MAY 2013
www.ti.com
REVISION HISTORY
Changes from Revision A (May 2013) to Revision B Page
• Changed layout of National Data Sheet to TI format ............................................................................................................ 9
10 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMV1031
PACKAGE OPTION ADDENDUM
www.ti.com 3-May-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
LMV1031UR-20/NOPB ACTIVE DSBGA YPD 4 250 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
LMV1031URX-20/NOPB ACTIVE DSBGA YPD 4 3000 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LMV1031UR-20/NOPB DSBGA YPD 4 250 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1
LMV1031URX-20/NOPB DSBGA YPD 4 3000 178.0 8.4 1.22 1.22 0.56 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 8-May-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LMV1031UR-20/NOPB DSBGA YPD 4 250 210.0 185.0 35.0
LMV1031URX-20/NOPB DSBGA YPD 4 3000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 8-May-2013
Pack Materials-Page 2
www.ti.com
PACKAGE OUTLINE
C
0.395 MAX
0.155
0.115
0.5
0.5
4X 0.295
0.255
B E A
D
4215141/B 08/2016
DSBGA - 0.395 mm max heightYPD0004
DIE SIZE BALL GRID ARRAY
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
SYMM
SYMM
BALL A1
CORNER
SEATING PLANE
BALL TYP 0.05 C
12
0.015 C A B
A
B
SCALE 14.000
D: Max =
E: Max =
1.184 mm, Min =
1.184 mm, Min =
1.123 mm
1.123 mm
www.ti.com
EXAMPLE BOARD LAYOUT
4X ( 0.265)
( 0.265)
METAL 0.05 MAX
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
( 0.265)
SOLDER MASK
OPENING
0.05 MIN
(0.5)
(0.5)
4215141/B 08/2016
DSBGA - 0.395 mm max heightYPD0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
SOLDER MASK DETAILS
NOT TO SCALE
12
A
B
SYMM
SYMM
LAND PATTERN EXAMPLE
SCALE:40X
NON-SOLDER MASK
DEFINED
(PREFERRED) SOLDER MASK
DEFINED
www.ti.com
EXAMPLE STENCIL DESIGN
4X ( 0.25) (R0.05) TYP
METAL
TYP
(0.5) TYP
(0.5) TYP
4215141/B 08/2016
DSBGA - 0.395 mm max heightYPD0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
12
A
B
SYMM
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:50X
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